US-12628681-B2 - Semiconductor mounting material filler and method for producing semiconductor mounting material filler, and semiconductor mounting material

Abstract

Provided is a method for producing an electronic material filler having excellent performance. The method includes a burning step of putting a particle raw material in flame obtained by burning combustible carbon-free gas containing no carbon to form a particle material to be contained in the electronic material filler. By adopting, as combustible gas, combustible gas containing no carbon, conductive particles formed of carbon are not generated in principle. Therefore, a step of removing the conductive particles formed of carbon by sieving or the like is not required. Particularly, carbon derived from hydrocarbon gas is adhered to and formed on, for example, the surface of the particle material or is formed in the particle material. Therefore, the carbon may not be completely removed by sieving or the like. However, the production method of the present invention prevents the carbon from being mixed in principle.

Inventors

• Shinta Hagimoto
• Nobutaka Tomita
• Susumu Abe

Assignees

• ADMATECHS CO., LTD.

Dates

Publication Date

20260512

Application Date

20230607

Priority Date

20201210

Claims (5)

1. 1 . A method for producing a semiconductor mounting material filler that contains a particle material and that is dispersed in a resin material to form a semiconductor mounting material, wherein a metal oxide is contained as a main component, and, in the metal oxide, a number of colored foreign objects that contain carbon and that are not less than 20 μm, is not greater than 10 in a supernatant liquid obtained when a dispersion liquid having 50 g of the metal oxide dispersed in 400 mL of ethanol is irradiated with 300 W ultrasound at 38 kHz for 20 minutes and is thereafter left as it is for 24 hours, and the metal oxide has a volume average particle diameter of not less than 0.1 μm and not greater than 40 μm, and a sphericity of not less than 0.85, the method comprising a spherical shape forming step of putting and burning and/or melting a particle raw material that contains, as a main component, metal contained in the metal oxide and/or the metal oxide, in flame obtained by burning combustible gas that contains 20% or more by volume of combustible carbon-free gas containing no carbon, to form the particle material.
2. 2 . The method for producing a semiconductor mounting material filler according to claim 1 , wherein the particle raw material has the metal oxide.
3. 3 . The method for producing a semiconductor mounting material filler according to claim 1 , wherein a content of the carbon-free gas in the combustible gas is 100%.
4. 4 . The method for producing a semiconductor mounting material filler according to claim 1 , wherein the carbon-free gas is ammonia and/or hydrogen.
5. 5 . The method for producing a semiconductor mounting material filler according to claim 1 , wherein the metal oxide is silica.

Description

TECHNICAL FIELD The present invention relates to a semiconductor mounting material filler and a method for producing the semiconductor mounting material filler, and a semiconductor mounting material. BACKGROUND ART To date, for semiconductor mounting materials such as printed wiring board materials, electronic substrates, solder resist, interlayer insulating films, build-up materials, FPC adhesive, die-bonding materials, underfills, ACF, ACP, NCF, NCP, and sealing materials, a resin composition in which a particle material formed of an inorganic substance is dispersed in a resin material has been widely used. The semiconductor mounting material is brought into direct contact with a semiconductor, and is thus required to exhibit various performances such as electrical characteristics such as high insulating properties, and mechanical characteristics such as a small linear expansion coefficient, and the high performance is achieved by dispersing a particle material formed of an inorganic substance in a resin material (for example, Patent Literature 1). As the particle material, a particle material (oxide particle material) formed of metal oxide is preferably adopted. Particularly, a particle material having high sphericity is preferably adopted since filling of the particle material is performed with high efficiency. Examples of a method for producing a particle material having high sphericity include a so-called VMC method in which a particle material (metal particle material) formed of metal is put in flame and burned to produce a particle material formed of metal oxide, and a melting method in which a particle raw material formed of metal oxide is put in flame, melted, and cooled to produce a particle material. In the VMC method, the metal particle material is explosively burned in flame, and the obtained metal oxide is vaporized and thereafter cooled, whereby an oxide particle material having extremely high sphericity is produced. The flame used at this time is formed by mixing a combustible gas such as propane and a supporting gas such as oxygen and burning the mixture. A metal of a metal particle material used as a raw material in the VMC method is relatively easily refined, and an oxide particle material is also easily obtained so as to have high purity. Meanwhile, in the melting method, a metal oxide particle material as a raw material is formed into spherical shapes by melting/cooling the metal oxide particle material, and, therefore, limitation on a raw material is reduced and the particle material is thus produced from various raw materials. CITATION LIST Patent Literature Patent Literature 1: JP2020-111474 (A) SUMMARY OF INVENTION Technical Problem However, in recent years, as semiconductors have fine sizes, a particle material dispersed in a semiconductor mounting material has been required to exhibit high performance. For example, in usage in which a semiconductor mounting material is brought into direct contact with a semiconductor having finer-size wiring, if particles (conductive particles) having electric conductivity are mixed as impurities, shortcircuiting may occur between adjacent wires, and, therefore, an amount of the conductive particles needs to be reduced. Therefore, the inventors of the present invention have attempted to further enhance purity also for oxide particle materials produced by the VMC method and the melting method. The present invention has been completed in view of the aforementioned circumstances, and an object of the present invention for solving the aforementioned problem is to provide a semiconductor mounting material filler having more excellent performance than conventional art and a method for producing the semiconductor mounting material filler, and a semiconductor mounting material. Solution to Problem The inventors of the present invention have focused on a composition of combustible gas used for flame in the VMC method and the melting method, as a result of thorough study for solving the aforementioned problem. To date, hydrocarbon gas such as propane has been used as combustible gas for the VMC method and the melting method. Although the hydrocarbon gas is burned into carbon dioxide and water, a part of the hydrocarbon gas becomes carbon due to incomplete combustion or the like, and the carbon is mixed into a produced particle material. Therefore, the inventors have found that, in a case where combustible gas (carbon-free gas) containing no carbon, such as hydrogen and ammonia, is adopted instead of hydrocarbon gas as the combustible gas, conductive particles such as carbon are not generated even when incomplete combustion occurs. Furthermore, the inventors have found that, particularly in a case where ammonia is adopted as carbon-free gas, a particle material having advantageous properties derived from the ammonia is produced. The inventors of the present invention have completed the invention described below based on the above-described finding. That is,