US-12628714-B2 - Semiconductor device

US12628714B2US 12628714 B2US12628714 B2US 12628714B2US-12628714-B2

Abstract

A semiconductor device includes: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; and a rectangular sealing resin covering the RC-IGBT and the IC chip. The RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise length of 44 mm or smaller, and the semiconductor device has a rated current of 25 A or more.

Inventors

Naoki Ikeda
Kazuki KODA
Shuhei Yokoyama
Shogo Shibata

Assignees

MITSUBISHI ELECTRIC CORPORATION

Dates

Publication Date: 20260512
Application Date: 20221017
Priority Date: 20220106

Claims (7)

1 . A semiconductor device comprising: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; a rectangular sealing resin covering the RC-IGBT and the IC chip; and two or more wires connecting the RC-IGBT and at least one of the plurality of power terminals, wherein the plurality of control terminals protrudes from one longer side of the sealing resin, the plurality of power terminals protrudes from the other longer side of the sealing resin, the RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise length of 44 mm or smaller, the semiconductor device has a rated current of 25 A or more, a widthwise length of the RC-IGBT is one-third or less of a lengthwise length of the IC chip, each of two or more connection points between the RC-IGBT and the two or more wires has a shape elongated along one direction in plan view, and an angle formed between the one direction and a lengthwise direction of the RC-IGBT is 40° or more and 50° or less.
2 . The semiconductor device according to claim 1 , wherein the two or more connection points between the RC-IGBT and the two or more wires are arranged along a lengthwise direction of the RC-IGBT.
3 . The semiconductor device according to claim 1 , wherein the IC chip has a rectangular shape, the IC chip includes a bonding pad on the RC-IGBT side, the RC-IGBT includes a gate pad on the IC chip side, and the semiconductor device further comprises a wire that connects the bonding pad and the gate pad.
4 . The semiconductor device according to claim 1 , wherein a material of the RC-IGBT includes a wide band-gap semiconductor.
5 . A semiconductor device comprising: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; and a rectangular sealing resin covering the RC-IGBT and the IC chip, wherein the plurality of control terminals protrudes from one longer side of the sealing resin, the plurality of power terminals protrudes from the other longer side of the sealing resin, the RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise length of 44 mm or smaller, the semiconductor device has a rated current of 25 A or more, the IC chip has a rectangular shape, a widthwise length of the RC-IGBT is one-third or less of a lengthwise length of the IC chip, the IC chip includes a bonding pad on the RC-IGBT side, the RC-IGBT includes a gate pad on the IC chip side, and the semiconductor device further comprises a wire that connects the bonding pad and the gate pad.
6 . The semiconductor device according to claim 5 , further comprising two or more wires connecting the RC-IGBT and at least one of the plurality of power terminals, wherein two or more connection points between the RC-IGBT and the two or more wires are arranged along a lengthwise direction of the RC-IGBT.
7 . The semiconductor device according to claim 5 , wherein a material of the RC-IGBT includes a wide band-gap semiconductor.

Description

BACKGROUND OF THE INVENTION Field of the Invention The present disclosure relates to a semiconductor device. Description of the Background Art A power module that is a semiconductor device for electric power is used in various apparatuses, and manufacturers have proposed various power modules. In particular, as a power module for consumer electronics such as home electric appliances, a dual inline package (DIP) transfer-molded power module including a terminal formed of a lead frame has been proposed (for example, Japanese Patent Application Laid-Open No. 2015-106685). In recent years, from the viewpoint of economic efficiency, a current and a breakdown voltage of a small power module are becoming higher and higher. For such a higher current and a higher breakdown voltage, the size of a power chip mounted in a power module needs to be increased. However, increasing the size of a power chip results in reduction of the number of power modules that can be produced from one lead frame, which causes a problem of reduced productivity. SUMMARY The present disclosure has been made in view of the above-described problem, and an object of the present disclosure is to provide a technique that enables production of the appropriate number of semiconductor devices from one lead frame. A semiconductor device according to the present disclosure includes: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; and a rectangular sealing resin covering the RC-IGBT and the IC chip, wherein the plurality of control terminals protrudes from one longer side of the sealing resin, the plurality of power terminals protrudes from the other longer side of the sealing resin, the RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise length of 44 mm or smaller, and the semiconductor device has a rated current of 25 A or more. The appropriate number of semiconductor devices can be produced from one lead frame. These and other objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description of the present disclosure when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view schematically illustrating a configuration of a semiconductor device according to a first preferred embodiment; FIG. 2 is a plan view illustrating a part of manufacturing processes of the semiconductor device according to the first preferred embodiment; FIG. 3 is a plan view schematically illustrating an RC-IGBT and an IC chip according to the first preferred embodiment; FIG. 4 is a view illustrating a relationship between an aspect ratio of the RC-IGBT and a length X of a sealing resin according to the first preferred embodiment; and FIG. 5 is a plan view schematically illustrating an RC-IGBT and an IC chip according to a second preferred embodiment. DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments will be described with reference to the accompanying drawings. Features described in the following embodiments are examples, and all of the features are not necessarily essential. In the following description, similar components in a plurality of preferred embodiments are denoted by the same or similar reference signs, and different components will be mainly described. Further, in the following description, specific positions and directions such as “upper”, “lower”, “left”, “right”, “front”, and “back” are not necessarily required to be equal to actual positions and directions in practice. First Preferred Embodiment FIG. 1 is a plan view schematically illustrating a configuration of a semiconductor device 11 according to a first preferred embodiment. Below, the semiconductor device 11 according to the first preferred embodiment will be described as a power module. The semiconductor device 11 in FIG. 1 includes a reverse conductive IGBT (RC-IGBT) 1, an integrated circuit (IC) chip 2, a plurality of control terminals 3, a plurality of power terminals 4, a sealing resin 5, a plurality of wires 6a, 6b, and 6c, and a bootstrap diode 7. In FIG. 1, the outer shape of the sealing resin 5 is indicated by a broken line for the sake of convenience. The RC-IGBT 1 is a rectangular semiconductor switching element including an insulated gate bipolar transistor (IGBT) and a freewheeling diode that are provided in one semiconductor substrate. The size of the RC-IGBT 1 is smaller than that in a configuration in which an IGBT and a freewheeling diode are provided in different semiconductor substrates. Thus, using the RC-IGBT 1 as a power chip of the semiconductor device 11 enables reduction of the size of the power chip, thereby reducing the size of the semiconductor device 11. The IC chip 2 is electrically connected to the RC-IGBT 1 and controls the RC-IGBT 1. Fo