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US-20260124712-A1 - CHEMICAL MECHANICAL POLISHING PADS, METHODS OF MANUFACTURING CHEMICAL MECHANICAL POLISHING PADS, AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE

US20260124712A1US 20260124712 A1US20260124712 A1US 20260124712A1US-20260124712-A1

Abstract

A chemical mechanical polishing (CMP) pad includes a polishing surface including a first region including a hydrophobic character and a second region including a hydrophilic character. A method of manufacturing a CMP pad includes forming a polishing surface of the CMP pad to include a first region including a hydrophobic character and a second region including a hydrophilic character. A method of manufacturing a semiconductor device includes polishing a wafer by pressing a surface of the wafer against a polishing surface of a CMP pad while rotating both the wafer and the CMP pad, and supplying a slurry on the polishing surface of the CMP pad.

Inventors

  • Jeng-Chi Lin
  • Chi-hsiang Shen
  • Te-Chien Hou
  • Chen-hsueh Lin
  • Jui Yu PAI
  • Shang-Tzu LIU
  • Tang-Kuei Chang
  • Hui-Chi Huang
  • Kei-Wei Chen

Assignees

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Dates

Publication Date
20260507
Application Date
20241101

Claims (20)

  1. 1 . A chemical mechanical polishing (CMP) pad comprising: a polishing surface including a first region including a hydrophobic character and a second region including a hydrophilic character.
  2. 2 . The CMP pad of claim 1 , wherein the first region surrounds the second region.
  3. 3 . The CMP pad of claim 2 , wherein the polishing surface further includes a third region including a hydrophilic character.
  4. 4 . The CMP pad of claim 3 , wherein the third region surrounds the first region.
  5. 5 . The CMP pad of claim 1 , wherein the second region surrounds the first region.
  6. 6 . The CMP pad of claim 5 , wherein the polishing surface further includes a third region including a hydrophobic character.
  7. 7 . The CMP pad of claim 6 , wherein the third region surrounds the second region.
  8. 8 . The CMP pad of claim 1 , wherein the polishing surface comprises a hydrophobic polymeric material, and the second region of the polishing surface includes a surface treated area including the hydrophilic character.
  9. 9 . The CMP pad of claim 1 , further comprising a top pad layer forming the polishing surface, wherein the top pad layer includes a first section including a hydrophobic polymeric material forming the first region and a second section including a hydrophilic polymeric material forming the second region.
  10. 10 . The CMP pad of claim 1 , further comprising a plurality of grooves formed in the polishing surface.
  11. 11 . The CMP pad of claim 10 , wherein the first region lines the grooves, and the second region is disposed outside the grooves.
  12. 12 . A method of manufacturing a chemical mechanical polishing (CMP) pad, the method comprising: forming a polishing surface of the CMP pad to include a first region including a hydrophobic character and a second region including a hydrophilic character.
  13. 13 . The method of claim 12 , wherein the forming the polishing surface comprises: forming a first section of pad including the hydrophobic character; forming a second section of pad including the hydrophilic character; combining the first and second sections to form a top pad layer including the polishing surface; and affixing the top pad layer over a sub pad layer.
  14. 14 . The method of claim 13 , wherein the second section surrounds the first section on the polishing surface.
  15. 15 . The method of claim 14 , wherein the forming the polishing surface further comprises: forming a third section of pad including a hydrophobic character; and combining the third section of pad with the first and second sections of pad so that the third section surrounds the second section of pad on the polishing surface.
  16. 16 . The method of claim 15 , wherein the third section surrounds the second section of the pad on the polishing surface.
  17. 17 . The method of claim 12 , wherein the forming the polishing surface comprises providing a hydrophobic polymeric pad, surface treating a part of the hydrophobic polymeric pad with a surface treatment agent to form the second region of the polishing surface including the hydrophilic character, wherein a portion of the hydrophobic polymeric pad not treated with the surface treatment agent forms the first region of the polishing surface including the hydrophobic character.
  18. 18 . A method of manufacturing a semiconductor device, the method comprising: polishing a wafer by pressing a surface of the wafer against a polishing surface of a chemical mechanical polishing (CMP) pad while rotating both the wafer and the CMP pad; and supplying a slurry on the polishing surface ( 106 ) of the CMP pad, wherein the polishing surface of the CMP pad includes a first region including a hydrophobic character and a second region including a hydrophilic character.
  19. 19 . The method of claim 18 , wherein the second region of the polishing surface surrounds the first region of the polishing surface.
  20. 20 . The method of claim 19 , wherein the polishing surface further includes a third region including a hydrophobic character, and the third region surrounds the second region of the polishing surface.

Description

BACKGROUND Polishing such as chemical mechanical polishing (CMP) is utilized during the manufacturing of semiconductor devices. However, problems can arise when attempting to uniformly polish wafer substrates or semiconductor device structures formed thereon. BRIEF DESCRIPTION OF THE DRAWINGS The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 schematically illustrates a CMP apparatus 1 according to an embodiment. FIGS. 2, 3, and 4 schematically illustrate stages of a method of manufacturing a semiconductor device, according to an embodiment. FIG. 5 schematically illustrates a stage of forming a top pad layer according to an embodiment. FIG. 6 schematically illustrates an embodiment of a sub pad layer. FIG. 7 schematically illustrates an embodiment of the top pad layer shown in FIG. 5 affixed over the sub pad layer shown in FIG. 6. FIGS. 8A and 8B schematically illustrate cross-sectional elevation views taken along centers of grooves extending across CMP pads, according to embodiments. FIGS. 9A and 9B schematically illustrate plan views of grooves formed in CMP pads according to embodiments. FIG. 10 schematically illustrates water droplets disposed on a polishing surface of a polishing pad according to an embodiment. FIG. 11 schematically illustrates the polishing pad of FIG. 10 under applied centrifugal force, according to an embodiment. FIGS. 12A, 12B, 12C, 12D, 12E, and 12F schematically illustrate stages of a method manufacturing a CMP pad, according to an embodiment. FIG. 13A schematically illustrates the interaction between a sulfobetaine methacrylate molecule and water molecules, according to an embodiment. FIG. 13B schematically illustrates an embodiment after surface treating a pad with sulfobetaine methacrylate, according to an embodiment. FIGS. 14A, 14B, 14C, and 14D schematically illustrate stages of a method manufacturing a CMP pad, according to an embodiment. FIGS. 15A, 15B, 15C, 15D, and 15E schematically illustrate stages of a method manufacturing a CMP pad, according to an embodiment. FIGS. 16A and 16B schematically illustrate views of an embodiment of a surface-treated polishing surface of a CMP pad, according to an embodiment. FIG. 17 schematically illustrates a plan view of a CMP pad under operation, according to an embodiment. FIG. 18 schematically illustrates a plan view of a CMP pad under operation, according to an embodiment. FIGS. 19A, 19B, and 19C illustrate wafer polishing profiles according to embodiments. FIG. 20 schematically illustrates a plan view of a CMP pad having a polishing head and wafer disposed thereon, according to an embodiment. FIG. 21 schematically illustrates a plan view of a CMP pad having a polishing head and wafer disposed thereon, according to an embodiment. FIG. 22 schematically illustrates a cross-section of a CMP pad according to an embodiment. FIG. 23 schematically illustrates a cross-section of an enlarged region of the pad shown in FIG. 22, according to an embodiment. FIG. 24 schematically illustrates the cross-section shown in FIG. 23 during a CMP process, according to an embodiment. FIG. 25 shows a flow chart of a method of manufacturing a CMP pad according to some embodiments. FIG. 26 shows a flow chart of method of manufacturing a semiconductor device, according to embodiments. FIG. 27 schematically illustrates an embodiment of a CMP system according to an embodiment. FIG. 28 is a block diagram illustrating a computing system 710 for controlling a CMP system, according to an embodiment. DETAILED DESCRIPTION It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, dimensions of elements are not limited to the disclosed range or values, but may depend upon process conditions and/or desired properties of the device. Moreover, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the first and second features, such that the first and second features may not be in direct contact. Various features may be arbitrarily drawn in different scales for simplicity and clarity. Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” “top,” “bottom,” “middle,”