US-20260125299-A1 - SEMICONDUCTOR MANUFACTURING WASTEWATER TREATMENT SYSTEM AND SEMICONDUCTOR MANUFACTURING WASTEWATER TREATMENT METHOD USING THE SAME

US20260125299A1US 20260125299 A1US20260125299 A1US 20260125299A1US-20260125299-A1

Abstract

A semiconductor manufacturing wastewater treatment system including a first tank configured to store semiconductor manufacturing wastewater containing a metal and silicate and an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, wherein the adsorption device includes a metal adsorption device configured to recover the metal from the semiconductor manufacturing wastewater supplied from the first tank and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the metal adsorption device.

Inventors

Junyoung Oh
Changha Lee
Yunho Kim
Alim Jang
Minhyun PARK
Younghun Kim
Jinhyeok Jang
Samjong Choi

Assignees

SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date: 20260507
Application Date: 20251031
Priority Date: 20241107

Claims (20)

1 . A semiconductor manufacturing wastewater treatment system comprising: a first tank configured to store semiconductor manufacturing wastewater containing a metal and silicate; and an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, wherein the adsorption device comprises a metal adsorption device configured to recover the metal from the semiconductor manufacturing wastewater supplied from the first tank and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the metal adsorption device.
2 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the metal adsorption device comprises a spacer, a first electrode disposed below the spacer, a second electrode disposed above the spacer, a first ion exchange membrane disposed between the spacer and the first electrode, and a second ion exchange membrane disposed between the spacer and the second electrode.
3 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the impurity adsorption device comprises a spacer, a negative electrode below the spacer, a positive electrode disposed above the spacer, and an ion exchange membrane disposed between the spacer and the positive electrode.
4 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the first tank is configured to allow a pH of the semiconductor manufacturing wastewater stored in the first tank to be adjusted to an acidic condition.
5 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the metal adsorption device is configured to adsorb metal included in semiconductor manufacturing wastewater to a negative electrode of the metal adsorption device, and to recover the metal.
6 . The semiconductor manufacturing wastewater treatment system of claim 1 , further comprising: a second tank configured to store process treatment water formed by treating the semiconductor manufacturing wastewater in the adsorption device; and a concentration meter configured to measure a metal concentration of the process treatment water.
7 . The semiconductor manufacturing wastewater treatment system of claim 6 , wherein the wastewater treatment system is configured to discharge the process treatment water from the wastewater treatment system when the measured metal concentration of the process treatment water is a preset value or less, and is configured to circulate the process treatment water from the second tank to the first tank when the measured metal concentration of the process treatment water is greater than the preset value.
8 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the metal adsorption device comprises: a first metal adsorption device configured to recover the first metal from the semiconductor manufacturing wastewater supplied from the first tank, a second metal adsorption device configured to recover the second metal from the semiconductor manufacturing wastewater treated by the first metal adsorption device.
9 . The semiconductor manufacturing wastewater treatment system of claim 1 , wherein the metal included in the semiconductor manufacturing wastewater includes a plurality of metals, and the plurality of metals are capable of being adsorbed to a negative electrode of the metal adsorption device and recovered by applying a second voltage to the metal adsorption device.
10 . A semiconductor manufacturing wastewater treatment system comprising: a first tank configured to store semiconductor manufacturing wastewater containing a first metal, a second metal that is different from the first metal, and silicate; and an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, wherein the adsorption device comprises a first metal adsorption device configured to recover the first metal from the semiconductor manufacturing wastewater supplied from the first tank, a second metal adsorption device configured to recover the second metal from the semiconductor manufacturing wastewater treated by the first metal adsorption device, and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the second metal adsorption device.
11 . The semiconductor manufacturing wastewater treatment system of claim 10 , wherein the first metal adsorption device comprises a negative electrode configured to adsorb cations of the first metal recovered by applying a first voltage to the first metal adsorption device, wherein cations of the second metal included in the semiconductor manufacturing wastewater are adsorbed to a negative electrode of the second metal adsorption device and recovered by applying a second voltage to the second metal adsorption device, and the second voltage is higher than the first voltage.
12 . The semiconductor manufacturing wastewater treatment system of claim 10 , wherein the first tank is configured to allow a pH of the semiconductor manufacturing wastewater stored in the first tank to be adjusted to an acidic condition.
13 . The semiconductor manufacturing wastewater treatment system of claim 10 , wherein the impurity adsorption device is configured to apply a third voltage to the semiconductor manufacturing wastewater and is configured to adjust a pH of the semiconductor manufacturing wastewater treated by the first metal adsorption device and the second metal adsorption device to be basic.
14 . The semiconductor manufacturing wastewater treatment system of claim 10 , further comprising: a second tank configured to store process treatment water formed by treating the semiconductor manufacturing wastewater by the adsorption device; and a concentration meter configured to measure a metal concentration of the process treatment water.
15 . The semiconductor manufacturing wastewater treatment system of claim 14 , wherein the wastewater treatment system is configured to discharge the process treatment water from the wastewater treatment system when the measured metal concentration of the process treatment water is a preset value or less, and is configured to circulate the process treatment from the second tank to the first tank when the measured metal concentration of the process treatment water is greater than the preset value.
16 . A method of treating semiconductor manufacturing wastewater comprising: supplying semiconductor manufacturing wastewater containing a metal and silicate from a first tank to a metal adsorption device and treating the semiconductor manufacturing wastewater in the metal adsorption device to remove the metal from the semiconductor manufacturing wastewater and recover the metal; supplying the semiconductor manufacturing wastewater treated by the metal adsorption device to an impurity adsorption device and removing the silicate from the semiconductor manufacturing wastewater to form process treatment water; supplying the process treatment water to a second tank; and measuring concentration of the metal in the process treatment water in the second tank.
17 . The method of claim 16 , further comprising discharging the process treatment water when the measured concentration of the metal in the process treatment water is under a predetermined level.
18 . The method of claim 16 , further comprising recirculating the process treatment water to the first tank when the measured concentration of the metal in the process treatment water is above a predetermined level.
19 . The method of claim 16 , further comprising adjusting a pH of the semiconductor manufacturing wastewater to an acidic condition in a first tank, prior to supplying the semiconductor manufacturing wastewater to the metal adsorption device.
20 . The method of claim 16 , wherein treating the semiconductor manufacturing wastewater in the metal adsorption device to remove the metal from the semiconductor manufacturing wastewater comprises applying a first voltage to the metal adsorption device to adsorb a metal from the semiconductor manufacturing wastewater to a negative electrode of the metal adsorption device.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on and claims priority under 35 U.S. C. § 119 to Korean Patent Application Nos. 10-2024-0157163, filed on Nov. 7, 2024, and 10-2025-0043047, filed on Apr. 2, 2025, in the Korean Intellectual Property Office, the disclosures of which are incorporated by reference herein in their entireties. BACKGROUND The inventive concept relates to a semiconductor manufacturing wastewater treatment system and a semiconductor manufacturing wastewater treatment method using the same. To manufacture a semiconductor device, various semiconductor processes, such as a plating process, a planarization process, and a cleaning process, are performed. While performing the semiconductor processes, a large amount of semiconductor manufacturing wastewater is also generated. Semiconductor manufacturing wastewater includes various metals used in semiconductor device manufacturing. To prevent environmental contamination and reuse the metals, there is a demand for a technique capable of recovering metals in semiconductor manufacturing wastewater. SUMMARY The inventive concept provides a semiconductor manufacturing wastewater treatment system capable of treating a large amount of semiconductor manufacturing wastewater and efficiently recovering metals from the semiconductor manufacturing wastewater, and a semiconductor manufacturing wastewater treatment method using the same. According to an aspect of the inventive concept, there is provided a semiconductor manufacturing wastewater treatment system including a first tank configured to store semiconductor manufacturing wastewater containing a metal and silicate and an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, wherein the adsorption device includes a metal adsorption device configured to recover the metal from the semiconductor manufacturing wastewater supplied from the first tank and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the metal adsorption device. According to another aspect of the inventive concept, there is provided a semiconductor manufacturing wastewater treatment system including a first tank configured to store semiconductor manufacturing wastewater containing a first metal, a second metal that is different from the first metal, and silicate, and an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, wherein the adsorption device includes a first metal adsorption device configured to recover the first metal from the semiconductor manufacturing wastewater supplied from the first tank, a second metal adsorption device configured to recover the second metal from the semiconductor manufacturing wastewater treated by the first metal adsorption device, and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the second metal adsorption device. According to another aspect of the inventive concept, there is provided a semiconductor manufacturing wastewater treatment system including a first tank configured to store semiconductor manufacturing wastewater containing a metal and silicate, an adsorption device configured to treat the semiconductor manufacturing wastewater supplied from the first tank, a second tank configured to store process treatment water formed by treating the semiconductor manufacturing wastewater by the adsorption device, and a concentration meter configured to measure a metal concentration of the process treatment water, wherein the adsorption device includes a metal adsorption device =configured to recover the metal from the semiconductor manufacturing wastewater supplied from the first tank and including a membrane capacitive deionization (MCDI) device and an impurity adsorption device configured to recover the silicate from the semiconductor manufacturing wastewater treated by the metal adsorption device and including a hybrid capacitive deionization (HCDI) device. According to another aspect of the inventive concept, there is provided a method of treating semiconductor manufacturing wastewater including supplying semiconductor manufacturing wastewater containing a metal and silicate from a first tank to a metal adsorption device and treating the semiconductor manufacturing wastewater in the metal adsorption device to remove the metal from the semiconductor manufacturing wastewater and recover the metal; supplying the semiconductor manufacturing wastewater treated by the metal adsorption device to an impurity adsorption device and removing the silicate from the semiconductor manufacturing wastewater to form process treatment water; supplying the process treatment water to a second tank; and measuring concentration of the metal in the process treatment water in the second tank. BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of