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US-20260125597-A1 - SEMICONDUCTOR NANOPARTICLE, METHOD OF PRODUCING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME

US20260125597A1US 20260125597 A1US20260125597 A1US 20260125597A1US-20260125597-A1

Abstract

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

Inventors

  • Seon-Yeong Kim
  • Sue In CHAE
  • Minho Kim
  • Dae-Yong SON
  • SeungRim Yang
  • Eun Seog CHO
  • Taekhoon KIM
  • Soo Kyung KWON
  • Tae-Gon Kim
  • Nayoun Won

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260507
Application Date
20251105
Priority Date
20241106

Claims (19)

  1. 1 . A nanoparticle, the nanoparticle comprising a semiconductor nanocrystal including zinc, indium, and selenium, wherein in the semiconductor nanocrystal, a mole ratio of indium to selenium is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1, wherein the nanoparticle does not comprise cadmium, and the nanoparticle is configured to emit a first light, and a peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.
  2. 2 . The nanoparticle of claim 1 , wherein the semiconductor nanocrystal does not comprise silver, copper, manganese, cobalt, or a combination thereof.
  3. 3 . The nanoparticle of claim 1 , wherein in the semiconductor nanocrystal, a mole ratio of indium to selenium is greater than or equal to about 0.13:1 and less than or equal to about 0.43:1.
  4. 4 . The nanoparticle of claim 1 , wherein in the semiconductor nanocrystal, a mole ratio of indium to a total of zinc and indium is greater than or equal to about 0.02:1 and less than or equal to about 0.8:1.
  5. 5 . The nanoparticle of claim 1 , wherein in the semiconductor nanocrystal, a mole ratio of zinc to selenium is greater than or equal to about 0.35:1 and less than or equal to about 1.34:1.
  6. 6 . The nanoparticle of claim 1 , wherein in the semiconductor nanocrystal, a charge balance value obtained by the following formula is greater than or equal to about 0.8 and less than or equal to about 1.8: Charge balance value={2[Zn]+3[In]}/(2[Se]) where [Zn], [In], and [Se] are molar amounts of zinc, indium, and selenium, respectively, in the semiconductor nanocrystal or in the nanoparticle.
  7. 7 . The nanoparticle of claim 1 , wherein the first light has a full width at half maximum of greater than or equal to about 50 nanometers and less than or equal to about 200 nanometers, and wherein the peak emission wavelength of the first light is greater than or equal to about 500 nanometers and less than or equal to about 680 nanometers.
  8. 8 . The nanoparticle of claim 1 , wherein in a UV-Vis absorption spectrum, the nanoparticle has an absorption edge in a range of greater than or equal to about 380 nanometers and less than or equal to about 540 nanometers.
  9. 9 . The nanoparticle of claim 1 , wherein in a UV-Vis absorption spectrum, the nanoparticle has a first absorption peak wavelength of greater than or equal to about 380 nanometers and less than or equal to about 500 nanometers.
  10. 10 . The nanoparticle of claim 1 , wherein the nanoparticle has a pyramidal shape.
  11. 11 . A method of preparing the nanoparticle of claim 1 , which comprises contacting an indium precursor, a selenium precursor, and a zinc precursor at a reaction temperature in the presence of an organic ligand in an organic solvent, wherein the reaction temperature is greater than or equal to about 230° C. and less than or equal to about 380° C.
  12. 12 . The method of claim 11 , wherein the method comprises preparing a reaction solution including the indium precursor, the selenium precursor, and the organic ligand in the organic solvent; heating the reaction solution to the reaction temperature; and adding the zinc precursor to the reaction solution.
  13. 13 . The method of claim 11 , wherein the reaction solution does not comprise dodecanethiol.
  14. 14 . The method of claim 11 , wherein the organic solvent comprises a C5 to C40 primary amine compound, and wherein an amount of the primary amine compound is greater than or equal to about 30% and less than or equal to about 100% based on a total volume of the organic solvent.
  15. 15 . The method of claim 11 , wherein the reaction temperature is greater than or equal to about 280° C. and less than or equal to about 320° C.
  16. 16 . A composition comprising the nanoparticle of claim 1 and a liquid vehicle.
  17. 17 . A composite comprising a matrix and a plurality of nanoparticles dispersed in the matrix, wherein the plurality of nanoparticles comprise the nanoparticle of claim 1 .
  18. 18 . A display device comprising the nanoparticle of claim 1 .
  19. 19 . An electronic device comprising: a first electrode and a second electrode that are spaced apart from each other; and an active layer disposed between the first electrode and the second electrode, wherein the active layer comprises the nanoparticle of claim 1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on and claims priority to Korean Patent Application No. 10-2024-0156446, filed on Nov. 6, 2024, in the Korean Intellectual Property Office, and all the benefits accruing therefrom under 35 U.S.C. § 119, the content of which in its entirety is incorporated herein by reference. BACKGROUND 1. Field A semiconductor nanoparticle, a method of producing the semiconductor nanoparticle, a composition including the semiconductor nanoparticle and a liquid vehicle, a semiconductor nanoparticle composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device comprising the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle are disclosed. 2. Description of the Related Art A semiconductor nanoparticle may exhibit different aspects, characteristics, or properties compared to a corresponding bulk material having substantially the same composition. For example, the semiconductor nanoparticle may have different physical properties based on the nanostructure (e.g., bandgap energy, a luminescent property, or the like). The semiconductor nanoparticle may be configured to emit light upon excitation by incident light or an applied voltage. The luminescent nanostructure may find applicability in a variety of devices (e.g., a display panel or an electronic device including the display panel). From an environmental point of view, developing a luminescent nanoparticle that does not contain a harmful heavy metal such as cadmium, and still achieves comparable or an improvement in one or more luminescent or optical properties is of interest and desirable. SUMMARY An aspect relates to a particle including a semiconductor nanocrystal (hereinafter, also can be referred to as a nanoparticle or a semiconductor nanoparticle) that is configured to emit light of a desired wavelength. An aspect relates to a manufacturing method for manufacturing the semiconductor nanoparticle or a population thereof. An aspect relates to a composition (e.g., an ink composition) including the semiconductor nanoparticle or a population thereof. An aspect relates to a semiconductor nanoparticle composite including the semiconductor nanoparticle or a population thereof. An aspect relates to a color conversion panel or a display device including the semiconductor nanoparticle or a population thereof. An aspect relates to an electronic device including the semiconductor nanoparticle or a population thereof, e.g., in a color conversion panel of an electronic device or display device. In an embodiment, a nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium, and in the semiconductor nanocrystal, a mole ratio of indium to selenium is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1, the nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light, and a peak emission wavelength of the first light is greater than or equal to about 480 nanometers (nm) and less than or equal to about 700 nm. The semiconductor nanocrystal may include a Group Dec. 13, 2016 compound including (or consisting of) zinc, indium, and selenium. The semiconductor nanocrystal may not include silver, copper, or a combination thereof. The semiconductor nanocrystal may not include manganese, cobalt, or a combination thereof. The semiconductor nanocrystal may have a tetragonal structure. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of indium to selenium (In:Se) may be greater than or equal to about 0.13:1, or greater than or equal to about 0.2:1. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of indium to selenium (In:Se) may be less than or equal to about 0.43:1, or less than or equal to about 0.4:1. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) may be greater than or equal to about 0.13:1 and less than or equal to about 0.43:1. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of indium to a total of zinc and indium (In:(Zn+In)) may be greater than or equal to about 0.02:1, or greater than or equal to about 0.09:1 and less than or equal to about 0.8:1, or less than or equal to about 0.75:1. In the semiconductor nanocrystal, a mole ratio of indium to a total of zinc and indium (In:(Zn+In)) may be greater than or equal to about 0.02:1 and less than or equal to about 0.8:1. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of indium to a total of zinc and indium may be greater than or equal to about 0.1:1, or greater than or equal to about 0.25:1. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of indium to a total of zinc and indium (In:(Zn+In)) may be less than or equal to about 0.7:1, less than or equal to about 0.65:1, or less than or equal to about 0.55:1. In the semiconductor nanocrystal or the nanoparticle, a mole ratio of zinc to selenium