Search

US-20260125800-A1 - COATING METHOD FOR SEMICONDUCTOR EQUIPMENT

US20260125800A1US 20260125800 A1US20260125800 A1US 20260125800A1US-20260125800-A1

Abstract

A semiconductor equipment coating method according to the present disclosure includes: (a) providing, as a coating material, metal powder of a same composition as a base material; (b) forming a textured coating layer by melting the metal powder, which is the coating material, using a laser beam with an intensity of 300 to 1000 W, wherein a separation distance between an end of a laser device where the laser beam is irradiated and a coating target surface of the substrate is 8 to 20 mm, and the strength of the textured coating layer may be almost the same as the strength of the base material.

Inventors

  • Jeong Geun PARK
  • Byeong Seon LEE
  • Yong Soo Lee

Assignees

  • KOMICO LTD.

Dates

Publication Date
20260507
Application Date
20231114
Priority Date
20221130

Claims (10)

  1. 1 . A semiconductor equipment coating method in which a coating layer is formed on a coating target surface of a substrate constituting semiconductor equipment, comprising: (a) preparing metal powder having a same composition as the base material; and (b) forming a textured coating layer by melting the metal powder, which is the coating material, using a laser beam having an intensity of 300 to 1000 W, wherein a separation distance between an end of a laser device where a laser beam is irradiated and the coating target surface of the substrate is 8 to 20 mm, and a ratio of the strength of the textured coating layer to the strength of the base material is 0.98 to 1.02.
  2. 2 . The semiconductor equipment coating method of claim 1 , wherein a speed of transport gas supplying the coating material is 1 to 20 l/min, and a speed of nozzle gas is 1 to 30 l/min.
  3. 3 . The semiconductor equipment coating method of claim 1 , wherein a diameter of the laser beam is 0.8 to 1.5 mm.
  4. 4 . The semiconductor equipment coating method of claim 1 , wherein a scanning speed of the laser beam is 8 to 12 m/min.
  5. 5 . The semiconductor equipment coating method of claim 1 , wherein a porosity of the textured coating layer is 0.1% or less.
  6. 6 . The semiconductor equipment coating method of claim 1 , wherein the pattern of the textured coating layer is any one selected from a lattice, a circle loop, a honeycomb loop, and a wave loop.
  7. 7 . The semiconductor equipment coating method of claim 1 , wherein the laser beam is provided from any one selected from a CO2 laser, a Nd:YAG (Rod/Disk) laser, a diode laser, and a fiber laser.
  8. 8 . The semiconductor equipment coating method of claim 1 , wherein the laser beam is provided using a directed energy deposition (DED) method using 3D printing equipment.
  9. 9 . The semiconductor equipment coating method of claim 1 , wherein semiconductor equipment to which coating is applicable is any one group selected from One piece shield, Cove ring, Shutter Disk, Depo Ring, Combined Shield, Upper Shield, Lower shield, Inner Shield, Earth shield, Platen Ring, Insulator, Plate Tag Shield URP, Plate Tag Shield LOW, SHIELD MASK, SHIELD MASK BASE, SHIELD CHAMBER UPPER, SHIELD SHUTTER UPPER, and SHIELD SHUTTER LOWER.
  10. 10 . A member manufactured by using the coating method of claim 1 .

Description

TECHNICAL FIELD The present disclosure relates to a coating method for semiconductor equipment, and more specifically, to a method of manufacturing a coating film applied to semiconductor equipment using physical vapor deposition (PVD). BACKGROUND ART The surface treatment for semiconductor equipment used in physical vapor deposition (PVD) processes primarily employs the arc thermal spray coating method. The arc thermal spray coating method involves supplying metal wire, melting the same through arc discharge, and then spray-depositing the same onto the surface of target objects such as chambers to form a coating. Conventionally, aluminum (AI) wire is mainly used as the metal wire, which is a material for thermal spray, and either two aluminum (Al) wires or wires of different metal types are supplied to enable melting by arc discharge. However, with technological advancements in semiconductor equipment such as PVD, there is a trend of changing conditions and states of devices and gases. These changing conditions and states within the reaction chamber due to technological advancements serve as critical variables for coating quality management. The conventional arc thermal spray method using metal wires cannot respond to these changes in device and gas conditions, resulting in arc fluctuations and asymmetric melting, which inevitably creates adverse conditions within the reaction chamber during PVD processes. Additionally, this leads to reduced adhesion strength for capturing deposition particles (thin film materials) dispersed onto the inner walls of the reaction chamber, causing easy delamination issues and exacerbating contamination and defects in the thin films deposited on one side. Ultimately, this causes problems that reduce the efficiency of PVD process operations. In particular, the conventional arc thermal spray coating method has the disadvantage of high porosity within the formed coating layer. This porosity causes outgassing problems during processing, resulting in longer backup times, and the surface characteristics of the formed coating layer contain numerous particle sources, reducing overall process yield. As prior art, Korean Registered Patent Publication No. 10-0322416 disclosed a technology for manufacturing a focus ring with a textured surface that can control and stabilize the formation of impurity coatings in focus ring devices used in plasma etching equipment and processes. Additionally, Korean Patent Publication No. 2013-0044170 confirmed that components of plasma processing chambers manufactured with scratch patterns of 1 to 2 micrometers provide reduced particle contamination of wafers processed in the chamber. Accordingly, there is a demand for technology development that can reduce particle sources, decrease porosity, and thereby increase process yield while effectively adhering process by-products to improve coating quality of products. Therefore, after continued research into coating methods that produce coating layers with patterns that not only improve density and porosity, but also effectively adhere to the by-products of the physical vapor deposition process, the present disclosure was developed. DISCLOSURE OF INVENTION Technical Problem The main objective of the present disclosure is to provide a method of manufacturing a coating film that has excellent bonding strength and mechanical strength, enables the formation of a high-density compact thin film, and exhibits superior adhesion of by-products generated during physical vapor deposition processes. The present disclosure is to provide a component with a coating film formed thereon using the method of manufacturing a coating film, which has excellent adhesion of process by-products and can produce products with superior quality during physical vapor deposition processes. Technical Solution To achieve the above objectives, an embodiment of the present disclosure provides a semiconductor equipment coating method in which a coating layer is formed on a coating target surface of a substrate constituting semiconductor equipment, including: (a) providing, as a coating material, metal powder of a same composition as a base material; (b) forming a textured coating layer by melting the metal powder, which is the coating material, using a laser beam with an intensity of 300 to 1000 W, wherein a separation distance between an end of a laser device where the laser beam is irradiated and a coating target surface of the substrate is 8 to 20 mm, and the ratio of the strength of the textured coating layer to the strength of the base material is 0.98 to 1.02. In an embodiment of the present disclosure, the speed of a transport gas supplying the coating material may be 1 to 20 l/min, and the speed of a nozzle gas may be 1 to 30 l/min. In an embodiment of the present disclosure, the diameter of the laser beam may be 0.8 to 1.5 mm. In an embodiment of the present disclosure, the scanning speed of the laser beam may be 8 to 12 m/min. In an emb