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US-20260125801-A1 - COATINGS FOR ENHANCEMENT OF PROPERTIES AND PERFORMANCE OF SUBSTRATE ARTICLES AND APPARATUS

US20260125801A1US 20260125801 A1US20260125801 A1US 20260125801A1US-20260125801-A1

Abstract

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Inventors

  • Bryan C. Hendrix
  • David W. Peters
  • Weimin Li
  • Carlo Waldfried
  • Richard A. Cooke
  • Nilesh Gunda
  • I-Kuan Lin

Assignees

  • ENTEGRIS, INC.

Dates

Publication Date
20260507
Application Date
20251104

Claims (16)

  1. 1 - 134 . (canceled)
  2. 135 . A semiconductor manufacturing component comprising: a three-dimensional network structure comprising a network of plurality of holes and channels having high aspect ratios and having a composite ALD coating disposed thereon, the composite ALD coating comprising layers of different ALD product materials.
  3. 136 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise different metal oxides.
  4. 137 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise at least two metal oxides selected from the group consisting of titania, alumina, zirconia, oxides of the formula MO wherein M is Ca, Mg, or Be, and oxides of the formula Ln 2 O 3 wherein Ln is a lanthanide element, Sc, or Y.
  5. 138 . The semiconductor manufacturing component of claim 137 , wherein Ln is La, Sc, or Y.
  6. 139 . The semiconductor manufacturing component of claim 135 , wherein the composite ALD coating comprises at least one layer of alumina, titania, or zirconia.
  7. 140 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise a metal oxide material as a first ALD product material in a first layer of the composite ALD coating and a metal as a second ALD product material in a second layer of the composite ALD coating.
  8. 141 . The semiconductor manufacturing component of claim 135 , wherein a number of layers is in a range of from 2 to 10,000.
  9. 142 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise oxides of the formula MO wherein M is Ca, Mg, or Be.
  10. 143 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise oxides of the formula M′O 2 , wherein M′ is a stoichiometrically acceptable metal.
  11. 144 . The semiconductor manufacturing component of claim 135 , wherein the different ALD product materials comprise oxides of the formula Ln 2 O 3 wherein Ln is a lanthanide element, Sc, or Y.
  12. 145 . The semiconductor manufacturing component of claim 135 , wherein the composite ALD coating is disposed on interior surfaces of the three-dimensional network structure.
  13. 146 . The semiconductor manufacturing component of claim 135 , wherein the three-dimensional structure comprises stainless steel.
  14. 147 . The semiconductor manufacturing component of claim 135 , wherein the composite ALD coating comprises at least one layer of alumina and one layer of zirconia.
  15. 148 . The semiconductor manufacturing component of claim 135 , wherein the composite ALD coating is pinhole free.
  16. 149 . A semiconductor manufacturing component comprising: a three-dimensional network structure comprising a network of plurality of holes and channels having high aspect rations and having a composite ALD coating disposed on the inner surfaces thereof the composite ALD coating comprising layers at least one layer of alumina and at least one layer of zirconia, wherein the composite ALD coating is pinhole free.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit under the provisions of 35 U.S. C. § 119 of the following U.S. provisional patent applications: U.S. Provisional Patent Application No. 62/116,181 filed Feb. 13, 2015 in the names of Carlo Waldfried, et al. for “THIN FILM ATOMIC LAYER DEPOSITION COATINGS”; U.S. Provisional Patent Application No. 62/167,890 filed May 28, 2015 in the names of Bryan C. Hendrix, et al. for “COATINGS TO PREVENT TRANSPORT OF TRACE METALS BY AL2CL6 VAPOR”; U.S. Provisional Patent Application No. 62/188,333 filed Jul. 2, 2015 in the names of Bryan C. Hendrix, et al. for “COATINGS FOR ENHANCEMENT OF PROPERTIES AND PERFORMANCE OF SUBSTRATE ARTICLES AND APPARATUS”; and U.S. Provisional Patent Application No. 62/221,594 filed Sep. 21, 2015 in the names of Bryan C. Hendrix, et al. for “COATINGS FOR ENHANCEMENT OF PROPERTIES AND PERFORMANCE OF SUBSTRATE ARTICLES AND APPARATUS”. The disclosures of such U.S. Provisional Patent Application Nos. 62/116,181, 62/167,890, 62/188,333, and 62/221,594 are hereby incorporated herein by reference, in their respective entireties, for all purposes. FIELD The present disclosure generally relates to coatings applicable to a variety of substrate articles and equipment, e.g., in respect of structures and apparatus having surface that is susceptible to formation thereon of undesired oxide, nitride, fluoride, chloride, or other halide contaminant species. In specific aspects, the disclosure relates to semiconductor manufacturing equipment and methods of enhancing the performance thereof, and more specifically relates to semiconductor manufacturing equipment susceptible to contamination and particle deposition associated with the presence of dialuminum hexachloride vapor in such equipment, and to compositions and methods for combating such adverse contamination and particle deposition. DESCRIPTION OF THE RELATED ART In many fields of endeavor, structures, materials, and apparatus are encountered that include surface susceptible to formation of contaminant species, such as surfaces of aluminum, anodized aluminum, quartz, stainless steel, etc. that are susceptible to formation of undesired oxide, nitride, and halide (e.g., fluoride and/or chloride) contaminant species thereon, which interfere with the use, utility, or function of the associated products, equipment, or materials. In the field of semiconductor manufacturing, aluminum and aluminum-containing materials are widely employed. Although aluminum as a metallization material has been significantly displaced by copper in nanoscale integrated circuitry applications, aluminum nonetheless continues to be extensively utilized as a wire bonding and connection material, as well as use in thin film materials, e.g., A1N thin films as barrier layers, piezoelectric device components, cold cathode materials, etc., as well as in compound semiconductor compositions for applications such as LEDs and other optoelectronic devices or Al2O3 layers as dielectrics, dielectric dopants, barriers, optical coatings, etc. In many of such applications, halogen gases are employed in semiconductor manufacturing equipment for processing of films in the device manufacturing operation, or as co-flow cleaning agents for removal of accumulated contaminant deposits on surfaces and components of the semiconductor manufacturing equipment. These halogen gases may include chloro species, which can reactively form dialuminum hexachloride (Al2Cl6) vapor when contacting aluminum present in the equipment, e.g., on wafers, or on surfaces or components of the equipment. Such dialuminum hexachloride vapor may in turn attack stainless steel surfaces and components in the semiconductor manufacturing equipment and serve to transport measurable levels of metals such as chromium, iron, and nickel to the wafers undergoing processing. Another class of applications uses Al2Cl6 vapor to deposit aluminum containing films. Although Al2O3 is widely deposited by ALD using trimethyl aluminum as a source reagent, trimethyl aluminum nonetheless is a pyrophoric liquid subject to significant safety and regulatory costs. Al2Cl6 vapor can be readily produced above solid AlCl3 in a solid vaporizer, such as solid vaporizer units of the type commercially sold under the trademark ProE-Vap by Entegris, Inc., Billerica, Massachusetts, USA. Stainless steel components of semiconductor and manufacturing equipment may be formed of 316 stainless steel or other stainless steel alloys that are generally electropolished. Such electropolishing generally leaves the surface coated with a layer of passive oxide containing chromium, iron, nickel, and other alloy components. In addition, such metal components may form surface traces of corresponding oxides by native oxidation processes. As a result, when dialuminum hexachloride encounters such metal oxides, the metal oxides react with the dialuminum hexachloride to form corresponding vapor phase metalloaluminum ch