US-20260125821-A1 - PROCESSING METHOD OF SINGLE-CRYSTAL QUARTZ MATERIAL

Abstract

A processing method of a single-crystal quartz material includes the following steps. An area to be processed in which the single-crystal quartz material readily generates twin crystals is determined. The area to be processed on the single-crystal quartz material is modified using a modifier, so that a processing difficulty of the area to be processed is reduced. The single-crystal quartz material of the modified area to be processed is processed using a processor.

Inventors

• CHENG-WEI LIN
• WUN-KAI WANG

Assignees

• TXC CORPORATION

Dates

Publication Date

20260507

Application Date

20241202

Priority Date

20241106

Claims (8)

1. 1 . A processing method of a single-crystal quartz material, comprising: determining an area to be processed in which the single-crystal quartz material readily generates twin crystals; modifying the area to be processed on the single-crystal quartz material using a modifier, so that a processing difficulty of the area to be processed is reduced; and processing the single-crystal quartz material of the modified area to be processed using a processor.
2. 2 . The processing method of the single-crystal quartz material of claim 1 , wherein reducing the processing difficulty comprises increasing an etching rate by at least 200%.
3. 3 . The processing method of the single-crystal quartz material of claim 1 , wherein the modifier comprises a heater, a cooler, a plasma machine, an ion bombardment machine, an ion implanter, or a laser.
4. 4 . The processing method of the single-crystal quartz material of claim 1 , wherein the processor comprises a plasma machine, an ion bombardment machine, an ion implanter, or an ultrafast laser having a pulse width less than 1 nanosecond.
5. 5 . The processing method of the single-crystal quartz material of claim 1 , wherein the processor comprises a dry or wet etching machine.
6. 6 . The processing method of the single-crystal quartz material of claim 1 , wherein the step of modifying the area to be processed on the single-crystal quartz material using the modifier comprises the following steps: controlling an energy applied by the modifier to the area to be processed in the process of the modifier modifying the area to be processed on the single-crystal quartz material, so that a temperature gradient of the area to be processed is less than or equal to a temperature gradient upper limit.
7. 7 . The processing method of the single-crystal quartz material of claim 1 , wherein the step of modifying the area to be processed on the single-crystal quartz material using the modifier comprises the following steps: controlling an accumulated energy applied by the modifier to the area to be processed in the process of the modifier modifying the area to be processed on the single-crystal quartz material, so that a temperature of the area to be processed is less than or equal to a temperature upper limit.
8. 8 . The processing method of the single-crystal quartz material of claim 1 , wherein the step of modifying the area to be processed on the single-crystal quartz material using the modifier comprises the following steps: modifying the single-crystal quartz material along a specific angle and a specific position of a crystal of the single-crystal quartz material.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims the priority benefit of Taiwan application serial no. 113142606, filed on Nov. 6, 2024. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification. BACKGROUND OF THE INVENTION Field Of The Invention The invention relates to a processing method, and in particular to a processing method of a single-crystal quartz material. Description of Related Art Since an etching process includes a plurality of processes, such as physical vapor deposition (PVD), lithography, and dry/wet etching, compared to using etching to process materials, using laser may reduce the number of manufacturing processes, reduce processing costs, and reduce the load on the etching station, thereby improving production efficiency. Currently, single-crystal quartz is processed using ultrafast laser, and the laser wavelengths thereof are mostly between UV and IR wavelengths of 355 nm to 1064 nm. The transmittance of quartz for all of these wavelengths is close to 90%, so more energy is needed during processing to induce ablation on the surface of the quartz material, thus leading to excessive heat accumulation. Excessive local temperature or excessive temperature gradient leads to the generation of twin crystals. SUMMARY OF THE INVENTION The invention provides a processing method of a single-crystal quartz material that may effectively prevent the single-crystal quartz material from generating twin crystals after processing. An embodiment of the invention provides a processing method of a single-crystal quartz material including the following steps. An area to be processed in which the single-crystal quartz material readily generates twin crystals is determined. The area to be processed on the single-crystal quartz material is modified using a modifier, so that a processing difficulty of the area to be processed is reduced. The single-crystal quartz material of the modified area to be processed is processed using a processor. Based on the above, in an embodiment of the invention, the processing method of the single-crystal quartz material modifies the area to be processed on the single-crystal quartz material using the modifier, so that the processing difficulty of the area to be processed is reduced, and the single-crystal quartz material at the modified area to be processed is processed using the processor. Therefore, modifying the area to be processed first effectively reduces the thermal threshold needed to generate processing effects during processing, and may reduce heat accumulation or thermal effects, thereby reducing processing temperature and temperature gradient. Due to the above effect of reducing processing temperature and temperature gradient, the processing method of the single-crystal quartz material may further avoid the issue of generating twin crystals during processing. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart of a processing method of a single-crystal quartz material according to an embodiment of the invention. FIG. 2 is a schematic diagram of a modifier modifying an area to be processed on a single-crystal quartz material and a processor processing the single-crystal quartz material at the modified area to be processed in a processing method of the single-crystal quartz material according to an embodiment of the invention. FIG. 3 is a schematic diagram of a processing method of a single-crystal quartz material according to an embodiment of the invention, in which a processor is an etching machine and a hole is formed at the single-crystal quartz material. FIG. 4 is a detailed flowchart of step S100 in FIG. 1. FIG. 5 is a detailed flowchart of step S100 in FIG. 1. FIG. 6 is a detailed flowchart of a processing method of a single-crystal quartz material and step S100 in FIG. 1 according to another embodiment of the invention. FIG. 7 is a schematic diagram of a specific angle or a specific position of a crystal on a single-crystal quartz material in a processing method of the single-crystal quartz material according to an embodiment of the invention. DESCRIPTION OF THE EMBODIMENTS FIG. 1 is a flowchart of a processing method of a single-crystal quartz material according to an embodiment of the invention. FIG. 2 is a schematic diagram of a modifier modifying an area to be processed on a single-crystal quartz material and a processor processing the single-crystal quartz material at the modified area to be processed in a processing method of the single-crystal quartz material according to an embodiment of the invention. Referring to FIG. 1 and FIG. 2, an embodiment of the invention provides a processing method of a single-crystal quartz material M, including the following steps. In step S10, an area A to be processed in which the single-crystal quartz material M readily generates twin crystals is determined. In step S100, the area A to be processed on the single-crystal quartz