US-20260128218-A1 - METHOD FOR FORMING CAPACITOR ELECTRODE

Abstract

A method for forming a capacitor electrode in accordance with the exemplary embodiment of the present disclosure includes preparing a substrate, forming a first thin film containing titanium (Ti) by injecting a source containing titanium on the substrate, and forming a second thin film by injecting a source containing a noble metal element or copper (Cu) on the substrate. Accordingly, in accordance with exemplary embodiments of the present disclosure, it is possible to suppress or prevent damage to an underlayer during electrode formation. In addition, it is possible to lower the resistivity of the electrode, and there is an effect of improving electrical characteristics of the electrode. In addition, there is an effect of improving quality characteristics of a capacitor as damage to the underlayer is suppressed or prevented and the electrical characteristics of the electrode are improved.

Inventors

• Young Woon Kim
• Yoon Ju Lee
• Chul Joo Hwang

Assignees

• JUSUNG ENGINEERING CO., LTD.

Dates

Publication Date

20260507

Application Date

20230413

Priority Date

20220426

Claims (10)

1. 1 . A method for forming a capacitor electrode, the method comprising: preparing a substrate; forming a first thin film containing titanium (Ti) by injecting a source containing titanium on the substrate; and forming a second thin film by injecting a source containing a noble metal element or copper (Cu) on the substrate, wherein the forming of the first thin film is repeated more times than the forming of the second thin film.
2. 2 . The method for forming a capacitor electrode of claim 1 , wherein the forming of the first thin film and the forming of the second thin film are alternately repeated.
3. 3 . The method for forming a capacitor electrode of claim 1 , wherein the forming of the second thin film is performed before the forming of the first thin film.
4. 4 . The method for forming a capacitor electrode of claim 1 , wherein in the forming of the first thin film, TiN atomic layer deposition is continuously performed a plurality of times.
5. 5 . The method for forming a capacitor electrode of claim 1 , wherein in the forming of the second thin film, a plurality of deposition cycles are continuously performed.
6. 6 . (canceled)
7. 7 . The method for forming a capacitor electrode of claim 1 , wherein a ratio(T 1 :T 2 ) of the number(T 1 ) of times the forming of the first thin film is executed to the number(T 2 ) of times the forming of the second thin film is executed is adjusted to 1:1 to 10:1.
8. 8 . The method for forming a capacitor electrode of claim 1 , wherein the source containing a noble metal element is a precursor containing at least one of ruthenium (Ru), platinum (Pt), gold (Au), silver (Ag), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), yttrium (Yi), and molybdenum (Mo).
9. 9 . The method for forming a capacitor electrode of claim 1 , wherein the forming of the second thin film comprises: injecting a reducing gas after injecting the source containing a noble metal element or copper (Cu); and activating the reducing gas using plasma.
10. 10 . The method for forming a capacitor electrode of claim 1 , wherein the forming of the second thin film comprises: injecting a reducing gas after injecting the source containing a noble metal element or copper (Cu); and exposing the substrate to plasma.

Description

TECHNICAL FIELD The present disclosure relates to a method for forming a capacitor electrode, and more particularly, to a method for forming a capacitor electrode capable of suppressing or preventing damage to an underlayer. BACKGROUND ART A capacitor applied to a semiconductor device includes a lower electrode formed on a substrate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer. Here, each of the upper electrode and the lower electrode is formed by stacking a titanium nitride (TiN) thin film and a tungsten (W) thin film. The titanium nitride (TiN) thin film is formed using a source containing TiCl4, and the tungsten (W) thin film is formed using a source containing WF6. However, when each of the titanium nitride (TiN) thin film and the tungsten (W) thin film is formed, chlorine (Cl) and fluorine (F) contained in the sources permeate into an underlayer, for example, a contact layer made of metal oxide. Accordingly, there is a limitation in that the underlayer, that is, the contact layer, is damaged, and thus the characteristics of the capacitor deteriorate. [Prior Art Document] (Patent Document 1) (Patent Document 1) Korean Patent No. 10-1110077 DISCLOSURE OF THE INVENTION Technical Problem The present disclosure provides a method for forming a capacitor electrode capable of suppressing or preventing damage to an underlayer. The present disclosure also provides a method for forming a capacitor electrode capable of improving electrical characteristics. Technical Solution In accordance with an exemplary embodiment, a method for forming a capacitor electrode includes preparing a substrate, forming a first thin film containing titanium (Ti) by injecting a source containing titanium on the substrate, and forming a second thin film by injecting a source containing a noble metal element or copper (Cu) on the substrate. The forming of the first thin film and the forming of the second thin film may be alternately repeated. The forming of the second thin film may be performed before the forming of the first thin film. In the forming of the first thin film, TiN atomic layer deposition may be continuously performed a plurality of times. In the forming of the second thin film, a plurality of deposition cycles may be continuously performed. The forming of the first thin film may be repeated more times than the forming of the second thin film. A ratio (T1:T2) of the number of times (T1) the forming of the first thin film is executed to the number of times (T2) the forming of the second thin film is executed may be adjusted to 1:1 to 10:1. The source containing a noble metal element may be a precursor containing at least one of ruthenium (Ru), platinum (Pt), gold (Au), silver (Ag), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), yttrium (Yi), and molybdenum (Mo). The forming of the second thin film may include injecting a reducing gas after injecting the source containing a noble metal element or copper (Cu) and activating the reducing gas using plasma. The forming of the second thin film may include injecting a reducing gas after injecting the source containing a noble metal element or copper (Cu) and exposing the substrate to plasma. Advantageous Effects In accordance with exemplary embodiments, it is possible to suppress or prevent damage to an underlayer during electrode formation. In addition, it is possible to lower resistivity of an electrode, and there is an effect of improving electrical characteristics of the electrode. In addition, as damage to the underlayer is suppressed or prevented and the electrical characteristics of the electrode are improved, there is an effect of improving quality characteristics of a capacitor. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram conceptually illustrating a capacitor having an electrode formed by a method for forming a capacitor electrode in accordance with exemplary embodiments; FIG. 2 is a diagram illustrating a lower electrode formed on a substrate having an underlayer formed on an upper surface thereof by the method in accordance with the exemplary embodiment; FIG. 3 is a conceptual diagram for describing a method for forming the lower electrode by the method in accordance with the exemplary embodiment; FIG. 4 is a diagram illustrating a lower electrode formed on the substrate having the underlayer formed on the upper surface thereof by a method in accordance with a modification example of the exemplary embodiment; FIG. 5 is a conceptual diagram for describing a method for forming the lower electrode by the method in accordance with the modification example of the exemplary embodiment; and FIG. 6 is a diagram illustrating a capacitor having a lower electrode formed on a substrate in which a trench is formed. MODE FOR CARRYING OUT THE INVENTION Hereinafter, an exemplary embodiment of the present disclosure will be described in more detail with reference to the accompanying drawings. However, the pre