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US-20260128265-A1 - SUBSTRATE PROCESSING APPARATUS

US20260128265A1US 20260128265 A1US20260128265 A1US 20260128265A1US-20260128265-A1

Abstract

A substrate processing apparatus may include a chamber, a chuck provided in a lower space of the chamber and set to accommodate a substrate, a plasma electrode provided in an upper space of the chamber and vertically spaced apart from the chuck, a target material provided on a lower surface of the plasma electrode, and a collimator provided between the chuck and the target material, wherein the collimator may include a body defining a plurality of holes, and a source diffusion barrier film provided on a surface of the body and formed of a conductive material.

Inventors

  • Young-Tae Ma
  • Young Seok ROH
  • Jongduk Suh

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260507
Application Date
20251105
Priority Date
20241105

Claims (20)

  1. 1 . A substrate processing apparatus comprising: a chamber; a chuck provided in the chamber and configured to accommodate a substrate; a plasma electrode provided in the chamber and vertically spaced apart from the chuck; a target material provided on a lower surface of the plasma electrode; and a collimator provided between the chuck and the target material, the collimator comprising: a body comprising a plurality of holes; and a source diffusion barrier film provided on a surface of the body and formed of a conductive material.
  2. 2 . The substrate processing apparatus of claim 1 , wherein the source diffusion barrier film comprises tantalum (Ta), a tantalum nitride (TaN), titanium (Ti), a titanium nitride (TiN), or a combination thereof.
  3. 3 . The substrate processing apparatus of claim 1 , wherein the body comprises aluminum (Al).
  4. 4 . The substrate processing apparatus of claim 1 , wherein the target material comprises copper (Cu).
  5. 5 . The substrate processing apparatus of claim 1 , wherein a thickness of the source diffusion barrier film ranges from 100 Å to 5500 Å.
  6. 6 . The substrate processing apparatus of claim 1 , further comprising: a bias controller electrically connected to the collimator, the bias controller configured to apply a negative bias voltage to the source diffusion barrier film and the body.
  7. 7 . The substrate processing apparatus of claim 1 , wherein the source diffusion barrier film comprises a material having a body-centered cubic (BCC) structure or a hexagonal close-packed (HCP) structure.
  8. 8 . The substrate processing apparatus of claim 1 , wherein the source diffusion barrier film is formed by a chemical vapor deposition (CVD) method, a physical vapor deposition (PVD) method, or an atomic layer deposition (ALD) method.
  9. 9 . A substrate processing apparatus comprising: a chamber; a chuck provided in the chamber and configured to accommodate a substrate; a plasma electrode provided in the chamber and vertically spaced apart from the chuck; a target material on a lower surface of the plasma electrode; and a collimator between the chuck and the target material, the collimator comprising: a body comprising a plurality of holes; and a source diffusion barrier film provided on a surface of the body and formed of an insulating material, wherein a thickness of the source diffusion barrier film ranges from 100 Å to 5500 Å.
  10. 10 . The substrate processing apparatus of claim 9 , wherein the source diffusion barrier film comprises a metal oxide, a metal sulfide, a metal nitride, a metal fluoride, or a combination thereof.
  11. 11 . The substrate processing apparatus of claim 10 , wherein the body comprises a same metal as a metal included in the source diffusion barrier film.
  12. 12 . The substrate processing apparatus of claim 11 , wherein the body comprises aluminum (Al), and the source diffusion barrier film comprises an aluminum oxide (Al 2 O 3 ).
  13. 13 . The substrate processing apparatus of claim 9 , wherein the source diffusion barrier film is formed by implanting impurity ions into the body.
  14. 14 . The substrate processing apparatus of claim 13 , wherein the source diffusion barrier film comprises a lower portion adjacent to the body and an intermediate portion spaced apart from the lower portion, and wherein an impurity concentration of the intermediate portion of the source diffusion barrier film is higher than an impurity concentration of the lower portion of the source diffusion barrier film.
  15. 15 . The substrate processing apparatus of claim 9 , wherein the source diffusion barrier film is in an amorphous state.
  16. 16 . A substrate processing apparatus comprising: a chamber having an internal space; a chuck provided in the internal space of the chamber; a plasma electrode provided in the internal space of the chamber and spaced apart from the chuck; a target material provided on a lower surface of the plasma electrode and including copper (Cu); a support installed in an intermediate region of the internal space of the chamber; and a collimator mounted on the support and provided between the chuck and the target material, the collimator comprising: a body comprises a plurality of holes, the body comprising aluminum (Al); and a copper diffusion barrier film formed on a surface of the body.
  17. 17 . The substrate processing apparatus of claim 16 , further comprising: a plasma position control module provided on a ceiling portion of the chamber.
  18. 18 . The substrate processing apparatus of claim 16 , wherein the copper diffusion barrier film is formed of a conductive material.
  19. 19 . The substrate processing apparatus of claim 16 , wherein the copper diffusion barrier film is formed of an insulating material.
  20. 20 . The substrate processing apparatus of claim 16 , wherein the copper diffusion barrier film comprises tantalum (Ta), a tantalum nitride (TaN), titanium (Ti), a titanium nitride (TiN), a metal oxide, a metal sulfide, a metal nitride, a metal fluoride, or a combination thereof.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This U.S. non-provisional application is based on and claims priority under 35 USC § 119 to Korean Patent Application No. 10-2024-0155544, filed on Nov. 5, 2024, in the Korean Intellectual Property Office, the disclosure of which is herein incorporated by reference in its entirety. BACKGROUND The disclosure relates to a substrate processing apparatus. Semiconductor devices are manufactured using various semiconductor manufacturing processes. One of the semiconductor manufacturing processes is a deposition process, which includes forming a thin film on a surface of a semiconductor substrate using a physical and/or chemical method. The deposition process includes physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. Meanwhile, as semiconductor devices become more highly integrated and miniaturized, a more precise film-forming method is required. SUMMARY Aspects of the disclosure are directed to providing a substrate processing apparatus with improved damage to a base material and deposition precision. According to an aspect of the disclosure, there is provided a substrate processing apparatus including: a chamber; a chuck provided in the chamber and configured to accommodate a substrate; a plasma electrode provided in the chamber and vertically spaced apart from the chuck; a target material provided on a lower surface of the plasma electrode; and a collimator provided between the chuck and the target material, the collimator including: a body including a plurality of holes; and a source diffusion barrier film provided on a surface of the body and formed of a conductive material. The source diffusion barrier film may include tantalum (Ta), a tantalum nitride (TaN), titanium (Ti), a titanium nitride (TiN), or a combination thereof. The body may include aluminum (Al). The target material may include copper (Cu). A thickness of the source diffusion barrier film ranges from 100 Å to 5500 Å. The substrate processing apparatus may further include a bias controller electrically connected to the collimator, the bias controller configured to apply a negative bias voltage to the source diffusion barrier film and the body. The source diffusion barrier film may include a material having a body-centered cubic (BCC) structure or a hexagonal close-packed (HCP) structure. The source diffusion barrier film may be formed by a chemical vapor deposition (CVD) method, a physical vapor deposition (PVD) method, or an atomic layer deposition (ALD) method. According to another aspect of the disclosure, there is provided a substrate processing apparatus including: a chamber; a chuck provided in the chamber and configured to accommodate a substrate; a plasma electrode provided in the chamber and vertically spaced apart from the chuck; a target material on a lower surface of the plasma electrode; and a collimator between the chuck and the target material, the collimator including: a body including a plurality of holes; and a source diffusion barrier film provided on a surface of the body and formed of an insulating material, wherein a thickness of the source diffusion barrier film ranges from 100 Å to 5500 Å. The source diffusion barrier film may include a metal oxide, a metal sulfide, a metal nitride, a metal fluoride, or a combination thereof. The body may include a same metal as a metal included in the source diffusion barrier film. The body may include aluminum (Al), and the source diffusion barrier film may include an aluminum oxide (Al2O3). The source diffusion barrier film may be formed by implanting impurity ions into the body. The source diffusion barrier film may include a lower portion adjacent to the body and an intermediate portion spaced apart from the lower portion, and wherein an impurity concentration of the intermediate portion of the source diffusion barrier film is higher than an impurity concentration of the lower portion of the source diffusion barrier film. The source diffusion barrier film may be in an amorphous state. According to another aspect of the disclosure, there is provided a substrate processing apparatus including: a chamber having an internal space; a chuck provided in the internal space of the chamber; a plasma electrode provided in the internal space of the chamber and spaced apart from the chuck; a target material provided on a lower surface of the plasma electrode and including copper (Cu); a support installed in an intermediate region of the internal space of the chamber; and a collimator mounted on the support and provided between the chuck and the target material, the collimator including: a body may include a plurality of holes, the body including aluminum (Al); and a copper diffusion barrier film formed on a surface of the body. The substrate processing apparatus may further include a plasma position control module provided on a ceiling portion of the chamber. The copper diffusion barrier film may be form