US-20260128738-A1 - CIRCUIT PROTECTION SYSTEMS AND RELATED METHODS

US20260128738A1US 20260128738 A1US20260128738 A1US 20260128738A1US-20260128738-A1

Abstract

Circuit implementations may include a sensing field effect transistor, a gate of the sensing field effect transistor coupled with a gate of a silicon carbide transistor; and a driver integrated circuit including a differential amplifier coupled with a drain of the sensing field effect transistor and configured to output a gate reference voltage in response to receiving a drain current from the sensing field effect transistor. A first transistor may be included where a gate of the first transistor may be coupled to the gate reference voltage and a collector is coupled to a reference current source forming a current mirror. A first comparator may be coupled to the collector and configured to output a detected voltage signal when the gate reference voltage reaches a predetermined voltage level and the driver integrated circuit receives the detected voltage signal identifying a first fault condition and shuts down the silicon carbide transistor.

Inventors

Vijay B. Rentala

Assignees

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Dates

Publication Date: 20260507
Application Date: 20251031

Claims (20)

1 . A circuit protection system comprising: a sensing field effect transistor, a gate of the sensing field effect transistor configured to be coupled with a gate of a silicon carbide field effect transistor; and a driver integrated circuit comprising: a differential amplifier coupled with a drain of the sensing field effect transistor and with a ground, the differential amplifier configured to output a gate reference voltage in response to receiving a drain current from the sensing field effect transistor; a first detection bipolar junction transistor, a gate of the first bipolar junction transistor coupled to the gate reference voltage and a collector of the first bipolar junction transistor coupled to a reference current source forming a current mirror; and a first comparator coupled to the collector of the first bipolar junction transistor, the first comparator configured to output a detected voltage signal when the gate reference voltage reaches a predetermined voltage level allowing current flow to an emitter of the first bipolar transistor; wherein the driver integrated circuit is configured to receive the detected voltage signal identifying a first fault condition and, in response, shut down operation of the silicon carbide field effect transistor.
2 . The system of claim 1 , wherein the first fault condition is one of an overcurrent condition or a short circuit condition.
3 . The system of claim 1 , further comprising: a second detection bipolar junction transistor, a gate of the second bipolar junction transistor coupled to the gate reference voltage and a collector of the second bipolar junction transistor coupled to the reference current source forming the current mirror; and a second comparator coupled to the collector of the second bipolar junction transistor, the second comparator configured to output a second detected voltage signal when the gate reference voltage reaches a predetermined voltage level allowing current flow to an emitter of the second bipolar transistor; wherein the driver integrated circuit is configured to receive the second detected voltage signal identifying a second fault condition and, in response, shut down operation of the silicon carbide field effect transistor.
4 . The system of claim 3 , wherein the second fault condition is one of an overcurrent condition or a short circuit condition.
5 . The system of claim 3 , further comprising: a third detection bipolar junction transistor, a gate of the third bipolar junction transistor coupled to the gate reference voltage and a collector of the third bipolar junction transistor coupled to a monitoring current voltage source, the third bipolar junction transistor configured to: when the gate reference voltage reaches a predetermined voltage level, allow monitoring current flow from a collector to an emitter of the third bipolar transistor; wherein the driver integrated circuit is configured to receive the monitoring current flow and, if the monitoring current flow reaches or exceeds a predetermined threshold value, identify a third fault condition and, in response, shut down operation of the silicon carbide field effect transistor.
6 . The system of claim 5 , wherein the third fault condition is one of an overcurrent condition or a short circuit condition.
7 . The system of claim 1 , wherein no external components to the driver integrated circuit and the silicon carbide field effect transistor are included.
8 . The system of claim 7 , wherein the external components include one of a resistor, a capacitor, or a diode.
9 . A circuit protection system comprising: a sensing field effect transistor, a gate of the sensing field effect transistor configured to be coupled with a gate of a silicon carbide field effect transistor; and a driver integrated circuit comprising: a first transistor coupled with a reference current source configured to generate a reference voltage; a second transistor coupled with a constant current source, a gate of the second transistor coupled to the reference voltage; and a first comparator coupled to the source of the second transistor, the first comparator configured to generate a first output voltage signal corresponding with an over current condition when a sensing current from a drain of the sensing field effect transistor is equal to or greater than the constant current source; wherein the driver integrated circuit is configured to receive the first output voltage signal identifying an overcurrent condition and, in response, shut down operation of the silicon carbide field effect transistor.
10 . The system of claim 9 , further comprising: a fourth transistor coupled with the sensing current from the drain of the sensing field effect transistor and with the reference current source; a third transistor coupled with the fourth transistor; and a second comparator coupled with a source of the fourth transistor; wherein the third transistor and fourth transistor are configured to, when the sensing current from the drain of the sensing field effect transistor is equal to or greater than the constant current source, allow current flow through the third transistor; wherein when current flows through the third transistor, current flows through the fourth transistor through a current mirror if the current flowing through the fourth transistor is greater than the constant current source, and the second comparator is configured to generate a second output voltage signal indicating a short circuit condition; and wherein the driver integrated circuit is configured to receive the second output voltage signal identifying the short circuit condition and, in response, shut down operation of the silicon carbide field effect transistor.
11 . The system of claim 10 , wherein the system can detect both the overcurrent condition and the short circuit condition simultaneously.
12 . The system of claim 10 , wherein a threshold voltage for the overcurrent condition is two times lower than a threshold voltage for the short circuit condition.
13 . The system of claim 10 , wherein a voltage ratio of the first transistor to the second transistor is 1:1000.
14 . The system of claim 10 , wherein a voltage ratio of the third transistor to the second transistor is 1:1000.
15 . The system of claim 9 , wherein no external components to the driver integrated circuit and the silicon carbide field effect transistor are included.
16 . The system of claim 15 , wherein the external components include one of a resistor, a capacitor, or a diode.
17 . The system of claim 9 , wherein the first transistor, second transistor, third transistor, and fourth transistor are field effect transistors.
18 . A method of protecting a field effect transistor, the method comprising: providing a sensing field effect transistor, a gate of the sensing field effect transistor coupled with a gate of a field effect transistor and a driver integrated circuit, the driver integrated circuit comprising: a first transistor coupled with a reference current source; a second transistor coupled with a constant current source; and a first comparator coupled to the source of the second transistor, generating a reference voltage with the first transistor and the reference current source where a gate of the second transistor coupled to the reference voltage; when a sensing current from the drain of the sensing field effect transistor is equal to or greater than the constant current source, generating a first output voltage signal corresponding with an overcurrent condition using the first comparator; receiving the first output voltage signal identifying the overcurrent condition at the driver integrated circuit; further providing: a fourth transistor coupled with the sensing current from the drain of the sensing field effect transistor and with the reference current source; a third transistor coupled with the fourth transistor; and a second comparator coupled with the source of the fourth transistor; when the sensing current from a drain of the sensing field effect transistor is equal to or greater than the constant current source, allowing current flow through the third transistor and corresponding current flow through the fourth transistor through a current mirror; if the current flowing through the fourth transistor is greater than the constant current source, generating a second output voltage signal indicating a short circuit condition using the second comparator; and receiving the second output voltage signal identifying the short circuit condition at the driver integrated circuit.
19 . The method of claim 18 , further comprising, in response to simultaneously receiving the first output voltage signal and the second output voltage signal, shutting down operation of the field effect transistor.
20 . The method of claim 18 , further comprising, in response to receiving either the first output voltage signal or the second output voltage signal, shutting down operation of the field effect transistor.

Description

CROSS REFERENCE TO RELATED APPLICATIONS This document claims the benefit of the filing date of U.S. Provisional Patent Application 63/715,480, entitled “Circuit Protection Systems and Related Methods” to Vijay Rentala which was filed on 11/1/2024, the disclosure of which is hereby incorporated entirely herein by reference. BACKGROUND 1. Technical Field Aspects of this document relate generally to semiconductor devices, such as field effect transistors. 2 Background Various semiconductor devices work to control the flow of electricity. Semiconductor devices are utilized in various applications including switching applications. Semiconductor devices include various packages that allow for the packaged devices to find mechanical support and form electrical connections with a circuit board or motherboard to which they are attached. SUMMARY Implementations of a circuit protection system may include a sensing field effect transistor, a gate of the sensing field effect transistor configured to be coupled with a gate of a silicon carbide field effect transistor; and a driver integrated circuit which may include a differential amplifier coupled with a drain of the sensing field effect transistor and with a ground. The differential amplifier may be configured to output a gate reference voltage in response to receiving a drain current from the sensing field effect transistor. A first detection bipolar junction transistor may be included where a gate of the first bipolar junction transistor may be coupled to the gate reference voltage and a collector of the first bipolar junction transistor coupled to a reference current source forming a current mirror. A first comparator may be coupled to the collector of the first bipolar junction transistor, the first comparator configured to output a detected voltage signal when the gate reference voltage reaches a predetermined voltage level allowing current flow to an emitter of the first bipolar transistor. The driver integrated circuit may be configured to receive the detected voltage signal identifying a first fault condition and, in response, shut down operation of the silicon carbide field effect transistor. Implementations of circuit protection system may include one, all, or any of the following: The first fault condition may be one of an overcurrent condition or a short circuit condition. The system may include a second detection bipolar junction transistor, a gate of the second bipolar junction transistor coupled to the gate reference voltage and a collector of the second bipolar junction transistor coupled to the reference current source forming the current mirror; and a second comparator coupled to the collector of the second bipolar junction transistor, the second comparator configured to output a second detected voltage signal when the gate reference voltage reaches a predetermined voltage level allowing current flow to an emitter of the second bipolar transistor. The driver integrated circuit may be configured to receive the second detected voltage signal identifying a second fault condition and, in response, shut down operation of the silicon carbide field effect transistor. The second fault condition may be one of an overcurrent condition or a short circuit condition. The system may include: a third detection bipolar junction transistor, a gate of the third bipolar junction transistor coupled to the gate reference voltage and a collector of the third bipolar junction transistor coupled to a monitoring current voltage source, the third bipolar junction transistor configured to: when the gate reference voltage reaches a predetermined voltage level, allow monitoring current flow from a collector to an emitter of the third bipolar transistor. The driver integrated circuit may be configured to receive the monitoring current flow and, if the monitoring current flow reaches or exceeds a predetermined threshold value, identify a third fault condition and, in response, shut down operation of the silicon carbide field effect transistor. The third fault condition may be one of an overcurrent condition or a short circuit condition. No external components to the driver integrated circuit and the silicon carbide field effect transistor may be included. The external components may include one of a resistor, a capacitor, or a diode. Implementations of a circuit protection system may include a sensing field effect transistor, a gate of the sensing field effect transistor configured to be coupled with a gate of a silicon carbide field effect transistor; and a driver integrated circuit may include a first transistor coupled with a reference current source configured to generate a reference voltage. A second transistor may be coupled with a constant current source, a gate of the second transistor coupled to the reference voltage; and a first comparator coupled to the source of the second transistor, the first comparator configured to generate a first output voltage signal correspondi