US-20260129842-A1 - SEMICONDUCTOR DEVICE

US20260129842A1US 20260129842 A1US20260129842 A1US 20260129842A1US-20260129842-A1

Abstract

A semiconductor device may include a substrate, a bit line extending in a direction perpendicular to the substrate, a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction, a first electrode having a first end portion connected to the semiconductor pattern, and extending in the first direction, and a support portion fixing a second end portion of the first electrode, where the second end portion of the first electrode is located within the support portion.

Inventors

Jungmin Park
Beom-jong Kim
HyungSuk Jung

Assignees

SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date: 20260507
Application Date: 20250331
Priority Date: 20241101

Claims (20)

1 . A semiconductor device, comprising: a substrate; a bit line extending in a direction perpendicular to the substrate; a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction; a first electrode having a first end portion connected to the semiconductor pattern, and extending in the first direction; and a support portion fixing a second end portion of the first electrode, wherein the second end portion of the first electrode is located within the support portion.
2 . The semiconductor device of claim 1 , further comprising: a dielectric layer surrounding the first electrode; and a second electrode located on the dielectric layer, wherein the first electrode, the dielectric material and the second electrode form a capacitor.
3 . The semiconductor device of claim 1 , wherein a thickness of the support portion along the first direction is 50 Å to 200 Å.
4 . The semiconductor device of claim 1 , wherein a width of a region overlapping with the first electrode of the support portion along the first direction is wider than a width of a region that does not overlap with the first electrode of the support portion along the first direction.
5 . The semiconductor device of claim 1 , wherein: the support portion comprises metal nitride, metal oxide or metal carbide; and the metal is Si, Ti, Ta, Hf, Zr or Sr.
6 . The semiconductor device of claim 1 , wherein the support portion is extends in the direction perpendicular to the substrate.
7 . The semiconductor device of claim 6 , wherein the support portion comprises a plurality of support portions located to be spaced apart in a second direction transverse to the first direction.
8 . The semiconductor device of claim 1 , wherein a groove is located in an interior of the first electrode.
9 . The semiconductor device of claim 8 , wherein the groove is capped by the support portion.
10 . The semiconductor device of claim 1 , wherein the first electrode has a pillar shape extending along the first direction.
11 . The semiconductor device of claim 1 , wherein the first electrode comprises a vertical portion extending in the direction perpendicular to the substrate and a pair of horizontal portions extending from the vertical portion in the first direction parallel to the substrate.
12 . A semiconductor device, comprising: a substrate; a bit line extending in a third direction perpendicular to the substrate; a plurality of semiconductor patterns having first end portions connected to the bit line, and extending in a first direction transverse to the third direction; a support portion extending in the third direction; and a plurality of first electrodes, extending in the first direction, having first end portions connected to respective semiconductor patterns of the plurality of semiconductor patterns and second end portions are located within the support portion.
13 . The semiconductor device of claim 12 , wherein a thickness of the support portion along the first direction is 50 Å to 200 Å.
14 . The semiconductor device of claim 12 , wherein: a width of a region overlapping with the first electrode of the support portion along the first direction is wider than a width of a region that does not overlap with the first electrode of the support portion along the first direction.
15 . The semiconductor device of claim 12 , wherein: the support portion comprises metal nitride, metal oxide or metal carbide; and the metal is Si, Ti, Ta, Hf, Zr or Sr.
16 . The semiconductor device of claim 12 , wherein the support portion comprises a plurality of support portions located to be spaced apart in a second direction transverse to both the first and third directions.
17 . A semiconductor device, comprising: a substrate; a bit line extending in a third direction perpendicular to the substrate; a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction parallel to the substrate; a capacitor connected to the semiconductor pattern; and a support portion extending in the third direction, wherein the capacitor comprises: a first electrode comprising a vertical portion extending in the third direction and a pair of horizontal portions extending from the vertical portion in the first direction; a dielectric layer surrounding the first electrode; and a second electrode located on the dielectric layer, wherein end portions of a pair of horizontal portions of the first electrode are located within the support portion.
18 . The semiconductor device of claim 17 , wherein a thickness of the support portion along the first direction is 50 Å to 200 Å.
19 . The semiconductor device of claim 17 , wherein a width of a region overlapping with the first electrode of the support portion along the first direction is wider than a width of a region that does not overlap with the first electrode of the support portion along the first direction.
20 . The semiconductor device of claim 17 , wherein: the support portion comprises metal nitride, metal oxide or metal carbide; and the metal is Si, Ti, Ta, Hf, Zr or Sr.

Description

CROSS-REFERENCE TO RELATED APPLICATION This present application claims priority to and the benefit under 35 U.S.C. § 119(a)-(d) of Korean Patent Application No. 10-2024-0153439 filed in the Korean Intellectual Property Office on Nov. 1, 2024, the entire disclosure of which is incorporated herein by reference in its entirety. FIELD The present disclosure relates to a semiconductor device. BACKGROUND There is a demand for technology to increase the integration density of semiconductor devices. In the case of conventional two-dimensional semiconductor devices, since integration density may be mainly determined by the area occupied by a unit memory cell, the degree of integration density achieved may be influenced by the technology used to form fine patterns. However, the very high cost of the equipment and techniques for forming increasingly finer patterns has become prohibitive. Accordingly, three-dimensional semiconductor memory devices having three-dimensionally arranged memory cells have been proposed. SUMMARY The present disclosure provides a semiconductor device having improved integration and improved structural stability. A semiconductor device may include a substrate, a bit line extending in a direction perpendicular to the substrate, a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction, a first electrode having a first end portion connected to the semiconductor pattern, and extending in the first direction, and a support portion fixing a second end portion of the first electrode, where the second end portion of the first electrode is located within the support portion. A semiconductor device may include a substrate, a bit line extending in a third direction perpendicular to the substrate, a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction transverse to the third direction, a support portion extending in the third direction, and a plurality of first electrodes, extending in the first direction, having first end portions connected to respective semiconductor patterns of the plurality of semiconductor patterns and second end portions are located within the support portion. A semiconductor device may include a substrate, a bit line extending in a third direction perpendicular to the substrate, a plurality of semiconductor patterns having a first end portion connected to the bit line, and extending in a first direction parallel to the substrate, a capacitor connected to the semiconductor pattern, and a support portion located to extend in the third direction, where the capacitor may include a first electrode including a vertical portion extending in the third direction and a pair of horizontal portions extending from the vertical portion in the first direction, a dielectric layer surrounding the first electrode, and a second electrode located on the dielectric layer, where end portions of a pair of horizontal portions of the first electrode are located within the support portion. A method for manufacturing a semiconductor device may include obtaining a substrate comprising a bit line extending in a direction perpendicular to the substrate and a plurality of semiconductor patterns having a first end portion connected to the bit line and extending in a first direction, using a mold to form a plurality of first electrodes having first end portions connected to respective semiconductor patterns of the plurality of semiconductor patterns, exposing second end portions of the plurality of first electrodes by etching a portion of the mold, forming a support portion so that the second end portions of the plurality of first electrodes are located within the support portion; and etching the mold. Forming the plurality of first electrodes may be performed using atomic layer deposition (ALD). Upon being formed, a thickness of the support portion along the first direction may be 50 Å to 200 Å. The support portion may comprise metal nitride, metal oxide or metal carbide, and the metal is Si, Ti, Ta, Hf, Zr or Sr. Forming the support portion may comprise forming a plurality of support portions located to be spaced apart in a second direction transverse to the first direction. The method may further comprise forming a plurality of dielectric layers surrounding respective electrodes of the plurality of first electrodes and forming a plurality of second electrodes on the plurality of dielectric layers. Upon being formed, the support portion may extend in the direction perpendicular to the substrate. According to embodiments, a semiconductor device having improved integration and improved structural stability may be provided. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 briefly illustrates a cross-section of a semiconductor device according to an embodiment. FIG. 2 and FIG. 3 are enlarged views of a region indicated as A in FIG. 1. FIG. 4 is a cross-section taken along line I-I′ of