US-20260129880-A1 - THREE-LAYER VERTICAL SHUNT RESISTOR, POWER SEMICONDUCTOR, AND METHOD FOR MANUFACTURING THE THREE-LAYER VERTICAL SHUNT RESISTOR

US20260129880A1US 20260129880 A1US20260129880 A1US 20260129880A1US-20260129880-A1

Abstract

A three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing a three-layer vertical shunt resistor are disclosed. The three-layer vertical shunt resistor includes a first resistor body including a resistive material, a second resistor body coupled to an upper portion of the first resistor body and formed of a resistive material having better electrical conductivity than the resistive material of the first resistor body, a first terminal coupled to a lower portion of the first resistor body and formed of a metal material having better electrical conductivity than the resistive material of the first resister body, and a second terminal coupled to a lower portion of the first resistor body and arranged to be spaced apart from the first terminal and formed of a metal material having better electrical conductivity than the resistive material of the first resistor body.

Inventors

Tae Seong Han

Assignees

KOSTECSYS CO., LTD.

Dates

Publication Date: 20260507
Application Date: 20250117
Priority Date: 20241105

Claims (13)

1 . A three-layer vertical shunt resistor comprising: a first resistor body including a resistive material; a second resistor body coupled to an upper portion of the first resistor body and formed of a resistive material having better electrical conductivity than the resistive material of the first resistor body; a first terminal coupled to a lower portion of the first resistor body and formed of a metal material having better electrical conductivity than the resistive material the first resistor body; and a second terminal coupled to a lower portion of the first resistor body and arranged to be spaced apart from the first terminal and formed of a metal material having better electrical conductivity than the resistive material the first resistor body.
2 . The three-layer vertical shunt resistor of claim 1 , wherein the resistive material of the first resistor body includes at least one of a Cu—Mn alloy, a Cu—Ni alloy, a Ni—Cr alloy, a Cu—Mn—Ni alloy, and an Fe—Cr alloy.
3 . The three-layer vertical shunt resistor of claim 1 , wherein the thickness of the first resistor body is 0.15 mm to 1.0 mm.
4 . The three-layer vertical shunt resistor of claim 1 , wherein the thickness of the second resistor is 0.02 mm to 0.7 mm.
5 . The three-layer vertical shunt resistor of claim 1 , wherein the thickness of the first terminal or the thickness of the second terminal is 0.1 mm to 0.8 mm.
6 . The three-layer vertical shunt resistor of claim 1 , the metal material of the second resistor body is formed of a single material.
7 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 1 .
8 . A method for manufacturing a three-layer vertical shunt resistor comprising: a step of preparing a first resistor body including a resistive material; a step of preparing a second resistor body formed of a resistive material having better electrical conductivity than the resistive material of the first resistor body; a step of preparing a first terminal and a second terminal formed of a metal material having better electrical conductivity than the resistive material of the first resistor body; a step of forming a laminate by laminating the first resistor body between the second resistor body and the first terminal, the first resistor body between the second resistor body and the second terminal, and the first terminal and the second terminal in a spaced apart form; and a step of applying a current to the laminate to diffusion-bond the first terminal, the second terminal, the first resistor body, and the second resistor body.
9 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 2 .
10 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 3 .
11 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 4 .
12 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 5 .
13 . A power semiconductor comprising: the three-layer vertical shunt resistor according to claim 6 .

Description

CROSS REFERENCE TO RELATED APPLICATION This application claims the benefit of the Korean Application No. 10-2024-0155729, filed on Nov. 5, 2024, which is hereby incorporated by reference in its entirety. BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a three-layer vertical shunt resistor, a power semiconductor, and a method for manufacturing the three-layer vertical shunt resistor, and more particularly, to a vertical shunt resistor having a three-layer structure, a power semiconductor, and a method for manufacturing the vertical shunt resistor. Discussion of the Related Art Shunt resistors are low-value precision resistors used as current measuring elements in high-current circuits. Shunt resistors can be inserted into the monitored circuit and used as current sensors. Shunt resistors can be used as current sensors by measuring the voltage drop that occurs across the two terminals of the shunt resistor inserted into the monitored circuit and inferring the amount of current in the circuit through Ohm's law (I=V/R). Shunt resistors, which are current sensors, are required to be highly precise and miniaturized for accurate current measurement in inverters, battery management systems and charging systems of xEV electric vehicles, solar inverters, etc., protection of electronic circuits from overvoltage, and equal charging/discharging of batteries. As next-generation power semiconductors such as SiC and GaN rapidly increase, the demand for shunt resistors is greatly increasing. Recently, in the cooling method of power semiconductors for electric vehicles, the demand for double-sided cooling method, which has superior cooling performance and allows more compact power module size compared to conventional single-sided cooling type power modules, is greatly increasing, and shunt resistors are built into power modules. However, conventional shunt resistors have long electrode lengths, which makes it difficult to miniaturize and integrate power module packaging. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to a three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing the three-layer vertical shunt resistor that substantially obviate one or more problems due to limitations and disadvantages of the related art. The problem to be solved by the present invention lies on providing a three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing the three-layer vertical shunt resistor without defects, non-uniformities or voids at the joint between the resistive material and the electrode material. Another problem to be solved by the present invention lies on providing a three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing a three-layer vertical shunt resistor that can be manufactured in an ultra-small size while providing high power capacity. Another problem to be solved by the present invention lies on providing a three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing a three-layer vertical shunt resistor, which can be manufactured so that the terminals of the shunt resistor are formed in the same layer and direction. The three-layer vertical shunt resistor according to the present invention includes a first resistor body including a resistive material, a second resistor body coupled to an upper portion of the first resistor body and formed of a metal material having better electrical conductivity than the resistive material, a first terminal coupled to a lower portion of the first resistor body and formed of a metal material having better electrical conductivity than the resistive material, and a second terminal coupled to a lower portion of the first resistor body and arranged to be spaced apart from the first terminal and formed of a metal material having better electrical conductivity than the resistive material. Preferably, the resistive material of the first resistor body includes at least one of a Cu—Mn alloy, a Cu—Ni alloy, a Ni—Cr alloy, a Cu—Mn—Ni alloy, and an Fe—Cr alloy. Preferably, the metal material of the second resistor body may be formed of a single material. Preferably, the metal material of the second resistor body may be one of Cu, Ni, and Cr. Preferably, the thickness of the first resistor body may be 0.15 mm to 1.0 mm. Preferably, the thickness of the second resistor body may be 0.02 mm to 0.7 mm. Preferably, the thickness of the first terminal or the thickness of the second terminal may be 0.1 mm to 0.8 mm. Preferably, the second resistor body and the first terminal body may be diffusion-bonded by a current applied to the upper and lower surfaces of the first resistor body. The power semiconductor according to the present invention includes the three-layer vertical shunt resistor according to the present invention. The method for manufacturing the three-layer vertical shunt resistor according to the presen