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US-20260129888-A1 - CAPACITOR AND ELECTRONIC DEVICE INCLUDING THE SAME

US20260129888A1US 20260129888 A1US20260129888 A1US 20260129888A1US-20260129888-A1

Abstract

A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

Inventors

  • Changsoo LEE
  • Jinhong Kim
  • Cheheung KIM
  • Jooho Lee
  • Yong-hee Cho

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260507
Application Date
20251218
Priority Date
20230126

Claims (19)

  1. 1 . A semiconductor device comprising: a first electrode; a second electrode facing the first electrode; a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a dielectric of a rutile phase; and an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the dielectric layer and the first interface layer, wherein the first interface layer is doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb).
  2. 2 . The semiconductor device of claim 1 , wherein the first interface layer comprises VO x , wherein x is within a range of 2 to 3.
  3. 3 . The semiconductor device of claim 1 , wherein the second interface layer includes a metal oxide having a rutile-phase crystal structure.
  4. 4 . The semiconductor device of claim 1 , wherein the second interface layer includes at least one of germanium oxide (GeO 2 ) or tin oxide (SnO 2 ).
  5. 5 . The semiconductor device of claim 1 , wherein a thickness of the second interface layer is smaller than a thickness of the first interface layer.
  6. 6 . The semiconductor device of claim 1 , wherein an oxygen chemical potential of the second interface layer is greater than an oxygen chemical potential of the first interface layer.
  7. 7 . The semiconductor device of claim 1 , wherein the first electrode includes at least one of titanium nitride (TiN), vanadium nitride (VN), or molybdenum nitride (MoN).
  8. 8 . The semiconductor device of claim 1 , wherein the dielectric of the dielectric layer comprises rutile-phase TiO 2 .
  9. 9 . The semiconductor device of claim 8 , wherein the dielectric layer comprises at least one of gallium (Ga), aluminum (Al), lanthanum (La), boron (B), indium (In), scandium (Sc), or yttrium (Y) in an amount greater than or equal to 0 atom % and less than or equal to about 10 atom %.
  10. 10 . The semiconductor device of claim 1 , wherein a dielectric constant of the dielectric layer is 50 or more.
  11. 11 . The semiconductor device of claim 1 , wherein a thickness of the dielectric layer is in a range of about 1 nm to about 20 nm.
  12. 12 . The semiconductor device of claim 1 , wherein each of the first electrode and the second electrode has a thickness in a range of about 10 nm to about 100 nm.
  13. 13 . The semiconductor device of claim 1 , wherein a leakage current of the semiconductor device is in a range of 1×10 −2 A/cm 2 to 1×10 −8 A/cm 2 .
  14. 14 . An electronic device comprising a semiconductor device, the semiconductor device comprising: a transistor; and a capacitor electrically connected to the transistor, the capacitor comprising a first electrode, a second electrode facing the first electrode, a dielectric layer between the first electrode and the second electrode, the dielectric layer including a dielectric of a rutile phase, and an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the first interface layer and the dielectric layer, wherein the first interface layer is doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb).
  15. 15 . The electronic device of claim 14 , wherein the first interface layer comprises VO x , wherein x is within in a range of 2 to 3.
  16. 16 . The electronic device of claim 14 , wherein the first interface layer is doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb).
  17. 17 . The electronic device of claim 14 , wherein the second interface layer comprises at least one of germanium oxide (GeO 2 ), tin oxide (SnO 2 ), or manganese oxide (MnO 2 ).
  18. 18 . The electronic device of claim 14 , wherein a thickness of the second interface layer is smaller than a thickness of the first interface layer.
  19. 19 . The electronic device of claim 14 , wherein the dielectric of the dielectric layer comprises rutile-phase TiO 2 .

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is a Continuation of U.S. application Ser. No. 18/350,397, filed on Jul. 11, 2023, which is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2023-0010228, filed on Jan. 26, 2023, in the Korean Intellectual Property Office, the disclosure of each of which is incorporated by reference herein in its entirety. BACKGROUND 1. Field The disclosure relates to a capacitor and an electronic device including the same. 2. Description of the Related Art As the integration density of electronic devices, such as memory, is increased, electronic elements in electronic devices are becoming more and more miniaturized. As the sizes of capacitors are decreased, capacitance may decrease and leakage current may increase. To ensure capacitance, research is being conducted into methods for increasing the dielectric constant of dielectric layers, and methods for suppressing an increase in leakage current. SUMMARY Provided are a capacitor of which equivalent oxide film thickness and leakage current characteristics are improved by applying a dielectric layer formed of a high dielectric constant material, and an electronic device including the same. Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented some embodiments of the disclosure. Provided is a capacitor including a first electrode, a second electrode facing the first electrode, a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a dielectric of a rutile phase, and an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the dielectric layer and the first interface layer. The first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer may be smaller than the thickness of the first interface layer. The first interface layer may include VOx, wherein x is within a range of 2 to 3. The first interface layer may be doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb). The thickness of the first interface layer may be greater than or equal to about 10 Å and less than or equal to about 100 Å. The second interface layer may include at least one of GeO2 and SnO2. The thickness of the second interface layer may be greater than or equal to about 0.1 Å and less than or equal to about 10 Å. An oxygen chemical potential of the second interface layer may be greater than an oxygen chemical potential of the first interface layer. The first electrode may include TIN, VN, MON, or a composite thereof. The dielectric of the dielectric layer may include rutile-phase TiO2. The dielectric layer may include at least one element of gallium (Ga), aluminum (Al), lanthanum (La), boron (B), indium (In), scandium (Sc) and yttrium (Y) in an amount greater than or equal to about 0 atom % and less than or equal to about 10 atom %. A dielectric constant of the dielectric layer may be 50 or more. A thickness of the dielectric layer may be in a range of about 1 nm to about 20 nm. Each of the first electrode and the second electrode may have a thickness in a range of about 10 nm to about 100 nm. The capacitor may have the leakage current within a range of 1×10−2 A/cm2 to 1×10−8 A/cm2. Provided is an electronic device including a transistor, and a capacitor electrically connected to the transistor. The capacitor may include a first electrode, a second electrode facing the first electrode, a dielectric layer between the first electrode and the second electrode, the dielectric layer including a dielectric of a rutile phase, and an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the first interface layer and the dielectric layer. The first interface layer may include a conductive metal oxide having a work function in the range of about 4.8 eV to about 6.0 eV. The second interface layer may include a metal oxide having a rutile-phase crystal structure. The thickness of the second interface layer may be smaller than the thickness of the first interface layer. The first interface layer may include VOx, wherein x is within in a range of 2 to 3. The first interface layer may be doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb). The second interface layer may include at least one of germanium oxide (GeO2), tin oxide (SnO2), or manganese oxide (MnO2). The second interface layer may have a thickness with a range of about 0.1 Å to about 10 Å. The