US-20260129893-A1 - OXIDE FILM COATING SOLUTION AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

US20260129893A1US 20260129893 A1US20260129893 A1US 20260129893A1US-20260129893-A1

Abstract

An oxide film coating solution, including a silane compound and an organic solvent in which the silane compound is dissolved, in which the silane compound is represented by Chemical Formula 1 or Chemical Formula 2. Chemical Formula 1 is (R) n —Si—(R′) m , in which R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, R′ is an alkyl, methoxy, ethoxy, chloro, or disilazane group, n and m are integers of 1 to 3, and n+m is 4. Chemical Formula 2 is (R 3 —Si) n —N—(H) m , in which R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, n and m are integers of 0 to 3, and n+m is 3.

Inventors

Chang Ju YEOM
Chang Su Jeon
Jung Min Oh
Sang Won Bae
Jae Sung Lee
Hyo San LEE
Jung Hun Lim

Assignees

SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date: 20260507
Application Date: 20260106
Priority Date: 20210331

Claims (3)

1 . An oxide film coating solution, comprising: a silane compound; and an organic solvent in which the silane compound is dissolved, wherein the silane compound is represented by Chemical Formula 1 or Chemical Formula 2 below: ( R ) n ⁢ — ⁢ Si ⁢ — ⁢ ( R ′ ) m ( Chemical ⁢ Formula ⁢ 1 ) in Chemical Formula 1, R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, R′ is an alkyl, methoxy, ethoxy, chloro, or disilazane group, n and m are integers of 1 to 3, and n+m is 4, ( R 3 ⁢ — ⁢ Si ) n ⁢ — ⁢ N ⁢ — ⁢ ( H ) m ( Chemical ⁢ Formula ⁢ 2 ) in Chemical Formula 2, R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, n and m are integers of 0 to 3, and n+m is 3.
2 . The oxide film coating solution as claimed in claim 1 , wherein the silane compound is included in the coating solution in an amount of 5 wt % to 8 wt %, based on 100 wt % of the oxide film coating solution.
3 . The oxide film coating solution as claimed in claim 1 , wherein the organic solvent includes a ketone, a hydrocarbon, or an ether.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is a Divisional application from U.S. Ser. No. 17/693,532 filed on Mar. 14, 2022, which claims priority from Korean Patent Application No. 10-2021-0041989 filed on Mar. 31, 2021 in the Korean Intellectual Property Office, and all the benefits accruing therefrom under 35 U.S.C. 119, the contents of both of which applications are herein incorporated by reference in their entireties. BACKGROUND 1. Field Embodiments relate to an oxide film coating solution and a method for manufacturing a semiconductor device using the same. 2. Description of the Related Art As one of scaling technologies for increasing density of semiconductor devices, a multi gate transistor in which a multi-channel active pattern (or a silicon body) having a fin or nanowire shape is formed on a substrate and a gate is formed on a surface of the multi-channel active pattern has been considered. SUMMARY The embodiments may be realized by providing a method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film. The embodiments may be realized by providing a method for manufacturing a semiconductor device, the method including forming a first fin type pattern including a first lower pattern and a first upper pattern on a first region of a substrate such that the first upper pattern includes a plurality of first sacrificial layers and a plurality of first sheet patterns alternately stacked on the first lower pattern; forming a second fin type pattern including a second lower pattern and a second upper pattern on a second region of the substrate such that the second upper pattern includes a plurality of second sacrificial layers and a plurality of second sheet patterns alternately stacked on the second lower pattern; forming a first field insulating film on the first region of the substrate such that the first field insulating film covers side walls of the first lower pattern; forming a second field insulating film on the second region of the substrate such that the second field insulating film covers side walls of the second lower pattern; forming an insulating liner on the second field insulating film, along profiles of an upper surface of the second field insulating film, and on the second upper pattern; forming a first passivation film and a second passivation film on the first field insulating film and the insulating liner; and removing the plurality of first sacrificial layers, after forming the first passivation film and the second passivation film. The embodiments may be realized by providing an oxide film coating solution including a silane compound; and an organic solvent in which the silane compound is dissolved, wherein the silane compound is represented by Chemical Formula 1 or Chemical Formula 2 below: (R)n⁢—⁢Si⁢—⁢(R′)m(Chemical⁢ Formula⁢ 1) in Chemical Formula 1, R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, R′ is an alkyl, methoxy, ethoxy, chloro, or disilazane group, n and m are integers of 1 to 3, and n+m is 4, (R3⁢—⁢Si)n⁢—⁢N⁢—⁢(H)m(Chemical⁢ Formula⁢ 2) in Chemical Formula 2, R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, n and m are integers of 0 to 3, and n+m is 3. BRIEF DESCRIPTION OF THE DRAWINGS Features will be apparent to those of skill in the art by describing in detail exemplary embodiments with reference to the attached drawings in which: FIGS. 1 and 2 are intermediate stage diagrams of a coating process of the oxide film coating solution according to some embodiments. FIG. 3 is a diagram of a semiconductor device according to some embodiments. FIGS. 4 and 5 are cross-sectional views taken along A-A of FIG. 3. FIG. 6 is a cross-sectional view taken along B-B of FIG. 3. FIG. 7 is a cross-sectional view taken along C-C of FIG. 3. FIG. 8 is a cross-sectional view taken along D-D of FIG. 3. FIGS. 9 to 17 are diagrams of stages in a method for manufacturing the semiconductor device according to some embodiments. DETAILED DESCRIPTION A semiconductor device according to some embodiments may, e.g., include a tunneling transistor (tunneling FET), a three-dimensional (3D) transistor, a transistor based on two-dimensional materials (2D material based FETs), or a