US-20260129933-A1 - CHEMICAL VAPOR DEPOSITION PROCESS AND COATING

Abstract

Coated articles, systems incorporating the coated articles, and processes of applying the coating to form the coated articles are disclosed. The coated article a substrate and a coating on the substrate. The coating includes silicon, carbon, and hydrogen. A post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both.

Inventors

• Nikolis Austin SNYDER
• David A. Smith
• Lucas D. PATTERSON
• James B. Mattzela

Assignees

• SILCOTEK CORP.

Dates

Publication Date

20260507

Application Date

20220818

Claims (20)

1. 1 . A coated article, comprising: a substrate; a coating on the substrate; wherein the coating includes silicon, carbon, and hydrogen; wherein a post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation for at least 20 minutes using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both.
2. 2 . The coated article of claim 1 , wherein the at least 20 minutes is at a temperature of at least 79° C.
3. 3 . The coated article of claim 1 , wherein the caustic salt is NaOH.
4. 4 . The coated article of claim 1 , wherein the caustic salt is KOH.
5. 5 . The coated article of claim 1 , wherein the caustic salt is at a weight per volume of between 5% and 10%.
6. 6 . A system comprising the coated article of claim 1 , wherein the system provides a control of an operation selected from the group consisting of industrial processes, energy technology, information technology, consumer electronics, medical diagnostics, illumination technology, transportation technology, communications technology, and combinations thereof.
7. 7 . A system comprising the coated article of claim 1 , wherein the system produces a two-terminal device, a three-terminal device, a four-terminal device, or a combination thereof.
8. 8 . A system comprising the coated article of claim 1 , wherein the system produces two-terminal devices, the two-terminal devices being selected from the group consisting of diodes for alternating currents (DIACs), rectifier diodes, Gunn diodes, impact ionization avalanche transit-time diodes (IMPATT diodes), laser diodes, light-emitting diodes, photocells, PIN (P-type, intrinsic, and N-type material) diodes, Schottky diodes, solar cells, Tunnel diodes, Zener diodes, and combinations thereof.
9. 9 . A system comprising the coated article of claim 1 , wherein the system produces three-terminal devices, the three-terminal devices being selected from the group consisting of bipolar transistors, Darlington transistors, field-effect transistors, insulated-gate bipolar transistors, silicon-controlled rectifiers, thyristors, triodes for alternating current (TRIACs), unijunction transistors, and combinations thereof.
10. 10 . A system comprising the coated article of claim 1 , wherein the system produces multi-terminal devices, the multi-terminal devices being selected from the group consisting of integrated circuits, charge-coupled devices, microprocessors, random-access memory devices, read-only memory devices, and combinations thereof.
11. 11 . A system comprising the coated article of claim 1 , wherein the system produces products having solid material including a regular, periodic structure of individual atoms bonded together.
12. 12 . A system comprising the coated article of claim 1 , wherein the system produces a crystalline solid material.
13. 13 . A system comprising the coated article of claim 1 , wherein the system produces a poly-crystalline solid material.
14. 14 . A system comprising the coated article of claim 1 , wherein the system produces an amorphous material.
15. 15 . A system comprising the coated article of claim 1 , wherein the system produces an intrinsic semiconductor.
16. 16 . A system comprising the coated article of claim 1 , wherein the system produces an extrinsic semiconductor.
17. 17 . A system comprising the coated article of claim 1 , wherein the system produces a semiconductor doped with a negative charge conductor, a positive charge conductor, or both.
18. 18 . A system comprising the coated article of claim 1 , wherein the system produces a semiconductor selected from the group consisting of silicon, germanium, carbon, indium antimonide, indium arsenide, indium phosphide, gallium phosphide, gallium antimonide, gallium arsenide, silicon carbide, gallium nitride, silicon germanium, selenium sulfide, and combinations thereof.
19. 19 . A process of applying the coating on the substrate of claim 1 .
20. 20 . A coated article, comprising: a substrate; a coating on the substrate; wherein the coating includes silicon, carbon, and hydrogen; wherein a post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation at a temperature of at least 79° C. using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both.

Description

PRIORITY The present application is an international patent cooperation treaty patent application claiming priority and benefit of U.S. Provisional Patent Application No. 63/236,413, entitled “CHEMICAL VAPOR DEPOSITION PROCESS AND COATING,” and filed on Aug. 24, 2021, the entirety of which is incorporated by reference. FIELD OF THE INVENTION The present invention is directed to coated articles, systems including coated articles, and processes of coating to produce a coated article. More particularly, the present invention is directed to coatings containing silicon, carbon, and hydrogen. BACKGROUND OF THE INVENTION Coatings are often susceptible to attack from caustic salts, such and sodium hydroxide or potassium hydroxide. Such attacks reduce hydrophobicity, cause dissolution or physical degradation, or other drawbacks. An example is described in U.S. Pat. No. 9,340,880, directed to a “Semiconductor Fabrication Process,” the entirety of which is incorporated by reference. In the coating of the Semiconductor Fabrication Process, the coating has the drawback of not being resistant to a 20-minute cleaning cycle in an aqueous solution of 5-10% NaOH, by weight/volume, at elevated temperature (79.44° C.) with ultrasonic agitation Coatings that show one or more improvements in comparison to the prior art would be desirable in the art. BRIEF DESCRIPTION OF THE INVENTION In an embodiment, a coated article includes a substrate and a coating on the substrate. The coating includes silicon, carbon, and hydrogen. A post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both. In another embodiment, a system includes a coated article. The coated article includes a substrate and a coating on the substrate. The coating includes silicon, carbon, and hydrogen. A post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both. In another embodiment, a process includes applying a coating to the coated article. The coated article includes a substrate and a coating on the substrate. The coating includes silicon, carbon, and hydrogen. A post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both. Other features and advantages of the present invention will be apparent from the following more detailed description, taken in conjunction with the accompanying drawings which illustrate, by way of example, the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a FT-IR plot, according to a comparative example of the disclosure consistent with the first example. FIG. 2 is a FT-IR plot, according to a comparative example of the disclosure consistent with the second example. FIG. 3 is a FT-IR plot, according to an embodiment of the disclosure consistent with the third example. FIG. 4 is a FT-IR plot, according to an embodiment of the disclosure consistent with the fourth example. FIG. 5 is a FT-IR plot, according to a comparative example of the disclosure consistent with the fifth example. FIG. 6 is an exemplary system containing an exemplary coated article, according to an embodiment of the disclosure. Wherever possible, the same reference numbers will be used throughout the drawings to represent the same parts. DETAILED DESCRIPTION OF THE INVENTION Provided are coatings, coated components, and processes using coated components that do not suffer from drawbacks of the prior art. Embodiments of the present disclosure, for example, in comparison to concepts failing to include one or more of the features disclosed herein, resist chemical attack and degradative loss from a caustic solution, maintain moieties at the surface and/or within the bulk, provide low surface energy and high water contact angles, resist reactivity with caustic species, retain chemistry that provides low surface energy and hydrophobic character, or a combination thereof. Referring to FIG. 6, according to an embodiment, a coating 603 is on a substrate 601 of a component 609, for example, used in a system 600 for performing a process to produce a product 607. The coating 603 maintains appearance, thickness, and water contact angles after exposure to at least a 20-minute cleaning cycle in an aqueous solution of a caustic salt 605, for example, 5-10% NaOH, by weight/volume or KOH, at elevated temperature (79.44° C.) with ultrasonic agitation. As described in the Examples section below, FIGS. 3 and 4 show FT-IR plots for specific embodiments of the coating 603; FIGS. 1, 2, and 5 show FT-IR plots of comparative coatings. In response to expo