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US-20260129987-A1 - FLARE MITIGATING IMAGE SENSOR PACKAGES AND RELATED METHODS

US20260129987A1US 20260129987 A1US20260129987 A1US 20260129987A1US-20260129987-A1

Abstract

An image sensor package may include an optically transmissive cover including a first layer coupled to a largest planar surface of the optically transmissive cover; and a plurality of nanostructures in the first layer located adjacent a perimeter of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light pass filter.

Inventors

  • Swarnal Borthakur
  • Bryan Almond

Assignees

  • SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Dates

Publication Date
20260507
Application Date
20241106

Claims (20)

  1. 1 . An image sensor package comprising: an optically transmissive cover comprising: a first layer coupled to a largest planar surface of the optically transmissive cover; and a plurality of nanostructures in the first layer located adjacent a perimeter of the optically transmissive cover; wherein the plurality of nanostructures form a substantially solar-blind ultraviolet light pass filter.
  2. 2 . The package of claim 1 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially prevent passage of visible light through the plurality of nanostructures.
  3. 3 . The package of claim 1 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially only allow passage of ultraviolet light through the plurality of nanostructures.
  4. 4 . The package of claim 1 , wherein the plurality of nanostructures comprise a grid comprising aluminum with holes in the grid filled with silicon dioxide.
  5. 5 . The package of claim 4 , wherein a pitch of the aluminum grid is 180 nanometers.
  6. 6 . The package of claim 4 , wherein the holes are square with sides each with a length of 67.5 nanometers.
  7. 7 . The package of claim 4 , wherein the aluminum grid is 150 nanometers thick.
  8. 8 . The package of claim 1 , wherein a width of the plurality of nanostructures adjacent the perimeter of the optically transmissive cover is between 200 microns to 500 microns.
  9. 9 . The package of claim 1 , further comprising an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die.
  10. 10 . An image sensor package comprising: an optically transmissive cover comprising: a recess extending around a perimeter of a largest planar surface of the optically transmissive cover; and a plurality of nanostructures in the recess; wherein the plurality of nanostructures form a substantially solar-blind ultraviolet light pass filter.
  11. 11 . The package of claim 10 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially prevent passage of visible light through the plurality of nanostructures.
  12. 12 . The package of claim 10 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially allow only passage of ultraviolet light through the plurality of nanostructures.
  13. 13 . The package of claim 10 , wherein a width of the plurality of nanostructures in the recess is between 200 microns to 500 microns.
  14. 14 . The package of claim 10 , further comprising an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die.
  15. 15 . An image sensor package comprising: an optically transmissive cover comprising a plurality of nanostructures in a material of the optically transmissive cover; wherein the plurality of nanostructures form a substantially solar-blind ultraviolet light pass filter.
  16. 16 . The package of claim 15 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially prevent passage of visible light through the plurality of nanostructures.
  17. 17 . The package of claim 15 , wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures is dimensioned to substantially allow passage of only ultraviolet light through the plurality of nanostructures.
  18. 18 . The package of claim 15 , wherein a width of the plurality of nanostructures in the material of the optically transmissive cover is between 200 microns to 500 microns.
  19. 19 . The package of claim 15 , further comprising an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die.
  20. 20 . The package of claim 15 , wherein each of the plurality of nanostructures extends into a thickness of the optically transmissive cover.

Description

BACKGROUND 1. Technical Field Aspects of this document relate generally to image sensor packages. 2. Background Semiconductor packages have been developed that work to protect semiconductor die from shock or vibration. Various semiconductor packages also work to help facilitate electrical connections between pads on a semiconductor die and various electrical traces included in a circuit board or motherboard to which the semiconductor package is attached. Some semiconductor packages also are constructed to provide moisture protection for the semiconductor die. Image sensor packages also protect the die surface from particle or other sources of contamination that would hinder imaging performance. SUMMARY An image sensor package may include an optically transmissive cover including a first layer coupled to a largest planar surface of the optically transmissive cover; and a plurality of nanostructures in the first layer located adjacent a perimeter of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light pass filter. Implementation of an image sensor package may include one, all, or any of the following: The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially prevent passage of visible light through the plurality of nanostructures. The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially only allow passage of ultraviolet light through the plurality of nanostructures. The plurality of nanostructures may include a grid including aluminum with holes in the grid filled with silicon dioxide. The pitch of the aluminum grid may be 180 nanometers. The holes may be square with sides each with a length of 67.5 nanometers. The aluminum grid may be 150 nanometers thick. The width of the plurality of nanostructures adjacent the perimeter of the optically transmissive cover may be between 200 microns to 500 microns. The package may include an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die. Implementations of an image sensor package may include an optically transmissive cover including a recess extending around a perimeter of a largest planar surface of the optically transmissive cover; and a plurality of nanostructures in the recess. The plurality of nanostructures may form a substantially solar-blind ultraviolet light pass filter. The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially prevent passage of visible light through the plurality of nanostructures. The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially allow only passage of ultraviolet light through the plurality of nanostructures. The width of the plurality of nanostructures in the recess may be between 200 microns to 500 microns. The package may include an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die. Implementations of an image sensor package may include an optically transmissive cover including a plurality of nanostructures in a material of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light pass filter. The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially prevent passage of visible light through the plurality of nanostructures. The pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures may be dimensioned to substantially allow passage of only ultraviolet light through the plurality of nanostructures. The width of the plurality of nanostructures in the material of the optically transmissive cover may be between 200 microns to 500 microns. The package may include an image sensor semiconductor die coupled to the optically transmissive cover where the largest planar surface faces the image sensor semiconductor die. Each of the plurality of nanostructures may extend into a thickness of the optically transmissive cover. The foregoing and other aspects, features, and advantages will be apparent to those artisans of ordinary skill in the art from the DESCRIPTION and DRAWINGS, and from the CLAIMS. BRIEF DESCRIPTION OF THE DRAWINGS Implementations will hereinafter be described in conjunction with the appended drawings, where like designations denote like elements, and: FIG. 1 is a top view of an implementation of an image sensor package; FIG. 2 is a cross sectional detail view of the implementation of the image sensor pac