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US-20260129990-A1 - PHOTODETECTOR AND ELECTRONIC APPARATUS

US20260129990A1US 20260129990 A1US20260129990 A1US 20260129990A1US-20260129990-A1

Abstract

A photodetector according to an embodiment of the present disclosure includes a first photoelectric conversion section ( 12 ) that photoelectrically converts light, a first light-guiding section ( 30 ) including a first structure ( 31 ) that has a size equal to or less than a wavelength of incident light and accepting incident light transmitted through the first photoelectric conversion section ( 12 ), and a second photoelectric conversion section ( 22 ) that photoelectrically converts infrared light incident via the first light-guiding section ( 30 ).

Inventors

  • Kazuyoshi Yamashita

Assignees

  • SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Dates

Publication Date
20260507
Application Date
20221006

Claims (20)

  1. 1 . A photodetector comprising: a first photoelectric conversion section that photoelectrically converts light; a first light-guiding section including a first structure having a size equal to or less than a wavelength of incident light, the first light-guiding section accepting incident light transmitted through the first photoelectric conversion section; and a second photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section.
  2. 2 . The photodetector according to claim 1 , comprising a third photoelectric conversion section provided next to the second photoelectric conversion section, the third photoelectric conversion section photoelectrically converting infrared light incident via the first light-guiding section.
  3. 3 . The photodetector according to claim 2 , wherein the second photoelectric conversion section photoelectrically converts infrared light of a first wavelength incident via the first light-guiding section, and the third photoelectric conversion section photoelectrically converts infrared light of a second wavelength that is different from the first wavelength incident via the first light-guiding section.
  4. 4 . The photodetector according to claim 2 , wherein the first light-guiding section is provided between the first photoelectric conversion section and the second photoelectric conversion section, the first light-guiding section dispersing light transmitted through the first photoelectric conversion section.
  5. 5 . The photodetector according to claim 2 , wherein the first light-guiding section guides infrared light of a first wavelength, of incident light, to a side of the second photoelectric conversion section, and guides infrared light of a second wavelength that is different from the first wavelength to a side of the third photoelectric conversion section.
  6. 6 . The photodetector according to claim 2 , comprising a fourth photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section, wherein the second photoelectric conversion section, the third photoelectric conversion section, and the fourth photoelectric conversion section receive and photoelectrically convert infrared light beams of wavelengths that are different from one another.
  7. 7 . The photodetector according to claim 6 , comprising a fifth photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section, wherein the second photoelectric conversion section, the third photoelectric conversion section, the fourth photoelectric conversion section, and the fifth photoelectric conversion section receive and photoelectrically convert infrared light beams of wavelengths that are different from one another.
  8. 8 . The photodetector according to claim 2 , comprising a fourth photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section, wherein the first light-guiding section guides infrared light of a first wavelength, of incident light, to a side of the second photoelectric conversion section, guides infrared light of a second wavelength to a side of the third photoelectric conversion section, and guides infrared light of a third wavelength to a side of the fourth photoelectric conversion section.
  9. 9 . The photodetector according to claim 8 , comprising a fifth photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section, wherein the first light-guiding section guides infrared light of the first wavelength, of incident light, to the side of the second photoelectric conversion section, guides infrared light of the second wavelength to the side of the third photoelectric conversion section, guides infrared light of the third wavelength to the side of the fourth photoelectric conversion section, and guides infrared light of a fourth wavelength to a side of the fifth photoelectric conversion section.
  10. 10 . The photodetector according to claim 1 , comprising a pixel array including a plurality of the first photoelectric conversion sections, wherein a distance between a center of the first photoelectric conversion section and a center of the first light-guiding section varies, depending on a distance from a center of the pixel array.
  11. 11 . The photodetector according to claim 1 , comprising a pixel array including a plurality of the first photoelectric conversion sections, wherein a distance between a center of the first light-guiding section and a center of the second photoelectric conversion section varies, depending on a distance from a center of the pixel array.
  12. 12 . The photodetector according to claim 1 , wherein the first structure has a size equal to or less than a wavelength of infrared light.
  13. 13 . The photodetector according to claim 1 , wherein the first structure has a refractive index that is higher than a refractive index of a medium next to the first structure.
  14. 14 . The photodetector according to claim 1 , comprising a second light-guiding section provided between the first photoelectric conversion section and the first light-guiding section, the second light-guiding section including a second structure having a size equal to or less than a wavelength of incident light, wherein the second photoelectric conversion section photoelectrically converts infrared light incident via the first light-guiding section and the second light-guiding section.
  15. 15 . The photodetector according to claim 14 , comprising a pixel array including a plurality of the first photoelectric conversion sections, wherein a distance between a center of the first light-guiding section and a center of the second light-guiding section varies, depending on a distance from a center of the pixel array.
  16. 16 . The photodetector according to claim 14 , wherein the second structure has a size equal to or less than a wavelength of infrared light, and the second structure has a refractive index that is higher than a refractive index of a medium next to the second structure.
  17. 17 . The photodetector according to claim 1 , wherein the first photoelectric conversion section photoelectrically converts visible light.
  18. 18 . The photodetector according to claim 2 , comprising: a lens on which light is incident; and a color filter provided between the lens and the first photoelectric conversion section, wherein the first photoelectric conversion section photoelectrically converts light transmitted through the lens and the color filter.
  19. 19 . The photodetector according to claim 18 , wherein the second photoelectric conversion section and the third photoelectric conversion section are provided for the lens.
  20. 20 . An electronic apparatus comprising: an optical system; and a photodetector that receives light transmitted through the optical system, the photodetector including a first photoelectric conversion section that photoelectrically converts light, a first light-guiding section including a first structure having a size equal to or less than a wavelength of incident light, the first light-guiding section accepting incident light transmitted through the first photoelectric conversion section, and a second photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section.

Description

TECHNICAL FIELD The present disclosure relates to a photodetector and an electronic apparatus. BACKGROUND ART There has been proposed a device including a photodiode that detects light (red light, green light, or blue light) corresponding to a specific region of a visible region of a light spectrum and a photodiode that detects light (infrared light) corresponding to an infrared region (PTL 1). CITATION LIST Patent Literature PTL 1: Japanese Unexamined Patent Application Publication No. 2009-272620 SUMMARY OF THE INVENTION It is desired, for a device that detects light, to have improved sensitivity to infrared light. It is desirable to provide a photodetector having favorable sensitivity. A photodetector according to an embodiment of the present disclosure includes a first photoelectric conversion section that photoelectrically converts light, a first light-guiding section including a first structure that has a size equal to or less than a wavelength of incident light and accepting incident light transmitted through the first photoelectric conversion section, and a second photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section. An electronic apparatus according to an embodiment of the present disclosure includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector includes a first photoelectric conversion section that photoelectrically converts light, a first light-guiding section including a first structure that has a size equal to or less than a wavelength of incident light and accepting incident light transmitted through the first photoelectric conversion section, and a second photoelectric conversion section that photoelectrically converts infrared light incident via the first light-guiding section. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram illustrating an example of a schematic configuration of an imaging device which is an example of a photodetector according to an embodiment of the present disclosure. FIG. 2 is a diagram illustrating an example of a pixel section of the imaging device according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 4A is a diagram illustrating an example of a planar configuration of the imaging device according to an embodiment of the present disclosure. FIG. 4B is a diagram illustrating an example of a planar configuration of the imaging device according to an embodiment of the present disclosure. FIG. 4C is a diagram illustrating an example of a planar configuration of the imaging device according to an embodiment of the present disclosure. FIG. 5 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 6 is a diagram illustrating an example of a planar configuration of the imaging device according to an embodiment of the present disclosure. FIG. 7 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification Example 1 of the present disclosure. FIG. 8 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification Example 2 of the present disclosure. FIG. 9A is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 2 of the present disclosure. FIG. 9B is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 2 of the present disclosure. FIG. 9C is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 2 of the present disclosure. FIG. 10 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification Example 3 of the present disclosure. FIG. 11A is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 3 of the present disclosure. FIG. 11B is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 3 of the present disclosure. FIG. 11C is a diagram illustrating an example of a planar configuration of the imaging device according to Modification Example 3 of the present disclosure. FIG. 12 is a block diagram illustrating a configuration example of an electronic apparatus including the imaging device. FIG. 13 is a block diagram depicting an example of schematic configuration of a vehicle control system. FIG. 14 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section. FIG. 15 is a view depicting an example of a schematic co