US-20260129991-A1 - PHOTODETECTION DEVICE AND ELECTRONIC DEVICE

Abstract

Provided is a photodetection device capable of suppressing generation of defective pixels. Specifically, the photodetection device includes a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate. Furthermore, each of the optical filters includes a metal structure including a metal material of the same kind. Moreover, the photodetection device includes, between the metal structures, a slit portion spatially sectioning the metal structures.

Inventors

• Tomohiro Yamazaki

Assignees

• SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Dates

Publication Date

20260507

Application Date

20230821

Priority Date

20221011

Claims (16)

1. 1 . A photodetection device comprising: a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate, wherein each of the optical filters includes a metal structure including a metal material of a same kind, and the photodetection device further comprises, between the metal structures, a slit portion spatially sectioning the metal structures.
2. 2 . The photodetection device according to claim 1 , wherein the optical filters are formed for the respective photoelectric conversion units, and the slit portion is formed between some of the metal structures or between all of the metal structures.
3. 3 . The photodetection device according to claim 1 , wherein the optical filter is formed for each of photoelectric conversion unit groups each including two or more of the photoelectric conversion units, and the slit portion is formed between some of the metal structures or between all of the metal structures.
4. 4 . The photodetection device according to claim 1 , further comprising a conductive portion that electrically connects the metal structures sectioned by the slit portion, wherein the conductive portion includes a conductive material different from a metal material included in the metal structure.
5. 5 . The photodetection device according to claim 4 , wherein the conductive portion is disposed on a surface side of the metal structure on a side of the semiconductor substrate and is electrically connected to a surface of the metal structure on the semiconductor substrate side.
6. 6 . The photodetection device according to claim 4 , wherein the conductive portion is disposed in the slit portion and is electrically connected to a surface of the metal structure on the slit portion side.
7. 7 . The photodetection device according to claim 1 , wherein a light shielding portion that is disposed in the slit portion and blocks transmission of light in the slit portion.
8. 8 . The photodetection device according to claim 1 , comprising a light-shielding film disposed between the semiconductor substrate and the metal structures and formed along a gap between the photoelectric conversion units to cover a light incident surface side of the gap between the photoelectric conversion units, wherein a slit width of the slit portion is smaller than a width of a portion of the light-shielding film extending along the gap between the photoelectric conversion units.
9. 9 . The photodetection device according to claim 1 , wherein a slit width of the slit portion is smaller than a wavelength of light incident on the slit portion.
10. 10 . The photodetection device according to claim 1 , wherein a shape of a portion of the slit portion extending along a gap between the photoelectric conversion units when viewed from a direction orthogonal to the light incident surface of the semiconductor substrate is linear.
11. 11 . The photodetection device according to claim 1 , wherein a shape of a portion of the slit portion extending along a gap between the photoelectric conversion units when viewed from a direction orthogonal to the light incident surface of the semiconductor substrate is a shape including a portion having a slit width different from a surrounding part.
12. 12 . The photodetection device according to claim 1 , wherein the optical filter is a wire grid polarizer.
13. 13 . The photodetection device according to claim 1 , wherein the optical filter is a plasmon filter.
14. 14 . The photodetection device according to claim 1 , wherein the optical filter is a guided mode resonance (GMR) filter.
15. 15 . The photodetection device according to claim 1 , wherein the optical filter is a Fabry-Perot (FP) filter.
16. 16 . An electronic device comprising a photodetection device including: a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate, wherein each of the optical filters includes a metal structure including a metal material of a same kind, and the photodetection device further comprises, between the metal structures, a slit portion spatially sectioning the metal structures.

Description

TECHNICAL FIELD The present disclosure relates to a photodetection device and an electronic device. BACKGROUND ART Conventionally, there has been proposed a photodetection device including a plurality of optical filters, each of the optical filters including a plurality of polarizers (for example, wire grid polarizer (WGP)) including a metal material (see, for example, Patent Document 1). In the photodetection device described in Patent Document 1, a lattice-shaped frame is formed between polarizers for the purpose of suppressing crosstalk and connecting layouts. CITATION LIST Patent Document Patent Document 1: Japanese Patent Application Laid-Open No. 2019-179783 SUMMARY OF THE INVENTION Problems to be Solved by the Invention Generally, a metal material has a property that metal atoms move so that stress is relaxed. In a process of manufacturing a photodetection device, films having various intrinsic stresses are used, and thermal stress is generated by applying heat of several hundred degrees and then returning the temperature to room temperature, so that stress is applied to polarizers including a metal material. Therefore, in the polarizers, the metal atoms are moved to relax the stress. In addition, minute voids exist in the metal material. Therefore, in the polarizers, voids also move along with movement of the metal atoms. Here, in the photodetection device described in Patent Document 1, all the polarizers are integrated by a frame. Therefore, when considering the movement of the voids in the photodetection device described in Patent Document 1, the metal atoms can freely move in all the polarizers, so that voids in the metal material are likely to grow, and thus there is a possibility that large voids are formed in the polarizers. That is, in the photodetection device described in Patent Literature 1, there is a possibility that metal atoms move to relax the stress, and a phenomenon in which voids grow in the polarizers and disconnection (stress migration) may occur. Then, as large voids are formed in the polarizers, the sensitivity value of the pixel having the polarizer in which large voids are formed increases, and a defective pixel (for example, a point defect) may be generated. An object of the present disclosure is to provide a photodetection device and an electronic device capable of suppressing generation of a defective pixel. Solutions to Problems A photodetection device of the present disclosure includes: (a) a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and (b) a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate, in which (c) each of the optical filters includes a metal structure including a metal material of a same kind, and (d) the photodetection device includes, between the metal structures, a slit portion spatially sectioning the metal structures. An electronic device of the present disclosure includes a photodetection device including: (a) a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and (b) a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate, in which (c) each of the optical filters includes a metal structure including a metal material of a same kind, and (d) the photodetection device includes, between the metal structures, a slit portion spatially sectioning the metal structures. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a diagram illustrating an overall configuration of a solid-state imaging device according to a first embodiment. FIG. 2 is a view illustrating a cross-sectional configuration of the solid-state imaging device taken along line A-A in FIG. 1. FIG. 3 is a view illustrating a cross-sectional configuration of a light-shielding film taken along line B-B in FIG. 2. FIG. 4 is a view illustrating a cross-sectional configuration of wire grid polarizers taken along line C-C in FIG. 2. FIG. 5 is a view illustrating a cross-sectional configuration of the wire grid polarizers in a range wider than that in FIG. 4. FIG. 6 is a view illustrating a cross-sectional configuration of the wire grid polarizers. FIG. 7 is a view illustrating a cross-sectional configuration of a solid-state imaging device according to a modification. FIG. 8 is a view illustrating a cross-sectional configuration of wire grid polarizers taken along line D-D in FIG. 7. FIG. 9 is a view illustrating a cross-sectional configuration of a solid-state imaging device according to a modification. FIG. 10 is a view illustrating a cross-sectional configuration of a GMR filter taken along line E-E in FIG. 9. FIG. 11 is a view illustrating a cross-sectional configuration of a solid-state imaging device according to a modification. FIG. 12 is a view illustrating a cross-sectional configuration of an FP filter taken along line F-F in FIG. 11. FIG. 13 is a view illustrating a cross-sectional configuration of an optical filter arra