US-20260130009-A1 - DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Abstract

Provided is a display apparatus including a substrate, and an inorganic light-emitting diode provided on the substrate and including a pixel electrode, a first semiconductor layer, an intermediate layer, a second semiconductor layer, and an opposite electrode. The first semiconductor layer includes a seed layer, a first-1 semiconductor layer provided on the seed layer, a first shield layer provided on the first-1 semiconductor layer and including a first opening defined therein, a first-2 semiconductor layer provided on the first shield layer, a second shield layer provided on the first-2 semiconductor layer and including a second opening defined therein, and a first-3 semiconductor layer provided on the second shield layer.

Inventors

• Hyuneok Shin
• SungHoon YANG
• Inyoung JUNG

Assignees

• SAMSUNG DISPLAY CO., LTD.

Dates

Publication Date

20260507

Application Date

20251106

Priority Date

20241107

Claims (20)

1. 1 . A display apparatus comprising: a substrate; and an inorganic light-emitting diode on the substrate and comprising a pixel electrode, a first semiconductor layer, an intermediate layer, a second semiconductor layer, and an opposite electrode, wherein the first semiconductor layer comprises: a seed layer; a first-1 semiconductor layer on the seed layer; a first shield layer on the first-1 semiconductor layer and comprising a first opening defined therein; a first-2 semiconductor layer on the first shield layer; a second shield layer on the first-2 semiconductor layer and comprising a second opening defined therein; and a first-3 semiconductor layer on the second shield layer.
2. 2 . The display apparatus of claim 1 , wherein the first-1 semiconductor layer comprises a polycrystalline semiconductor material.
3. 3 . The display apparatus of claim 1 , wherein the first-2 semiconductor layer comprises a semiconductor material of a quasi-single crystal.
4. 4 . The display apparatus of claim 1 , wherein the first-3 semiconductor layer comprises a semiconductor material of a single crystal or a semiconductor material of a quasi-single crystal.
5. 5 . The display apparatus of claim 1 , wherein the first shield layer comprises an inorganic insulating material.
6. 6 . The display apparatus of claim 5 , wherein the first shield layer comprises at least one selected from among silicon oxide (SiO x ), silicon oxynitride (SiON), and silicon nitride (SiN x ).
7. 7 . The display apparatus of claim 1 , wherein the second shield layer comprises a transparent conductive oxide (TCO).
8. 8 . The display apparatus of claim 1 , wherein the seed layer comprises a material having a lattice constant similar to a lattice constant of a semiconductor material included in the first-1 semiconductor layer.
9. 9 . The display apparatus of claim 7 , wherein the first-1 semiconductor layer comprises gallium nitride (GaN), and the seed layer comprises zinc oxide (ZnO x ).
10. 10 . The display apparatus of claim 1 , wherein the intermediate layer is on the first semiconductor layer.
11. 11 . The display apparatus of claim 1 , wherein the second semiconductor layer is on the intermediate layer.
12. 12 . A method of manufacturing a display apparatus, the method comprising: forming a seed layer on a pixel electrode; forming a first-1 semiconductor layer on the seed layer through crystal growth; forming, on the first-1 semiconductor layer, a first shield layer comprising a first opening defined therein; forming a first-2 semiconductor layer on the first shield layer through crystal growth; forming, on the first-2 semiconductor layer, a second shield layer comprising a second opening defined therein; and forming a first-3 semiconductor layer on the second shield layer through crystal growth.
13. 13 . The method of claim 12 , wherein the first-1 semiconductor layer comprises a polycrystalline semiconductor material.
14. 14 . The method of claim 12 , wherein the first-2 semiconductor layer comprises a semiconductor material of a quasi-single crystal.
15. 15 . The method of claim 12 , wherein the first-3 semiconductor layer comprises a semiconductor material of a single crystal or a semiconductor material of quasi-single crystal.
16. 16 . The method of claim 12 , wherein the first shield layer comprises an inorganic insulating material.
17. 17 . The method of claim 12 , wherein the first shield layer comprises at least one selected from among silicon oxide (SiO x ), silicon oxynitride (SiON), and silicon nitride (SiN x ), and the second shield layer comprises a transparent conductive oxide (TCO).
18. 18 . The method of claim 12 , wherein the seed layer comprises a material having a lattice constant similar to a lattice constant of a semiconductor material included in the first-1 semiconductor layer.
19. 19 . The method of claim 18 , wherein the first-1 semiconductor layer comprises gallium nitride (GaN), and the seed layer comprises zinc oxide (ZnO x ).
20. 20 . An electronic apparatus comprising the display apparatus of claim 1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION The present application claims priority to and the benefit of Korean Patent Application No. 10-2024-0157158, filed on Nov. 7, 2024, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. BACKGROUND 1. Field One or more aspects of embodiments of the present disclosure are directed toward a display apparatus and a method of manufacturing the display apparatus. 2. Description of the Related Art A display apparatus can visually display data. A display apparatus may be used as a display unit of products such as mobile phones (e.g., relatively small-sized products), and may be used as a display unit of large-scale products (e.g., relatively large-sized products) such as televisions. A display apparatus includes a plurality of pixels that receive electrical signals and are to emit light based on the received signals and to display images to the outside. Each pixel includes a display element. As an example, an inorganic light-emitting display apparatus includes an inorganic light-emitting diode as a display element. Recently, as the purpose of a display apparatus has diversified, research on a design to improve the quality of the display apparatus has been ongoing. SUMMARY One or more aspects of embodiments of the present disclosure are directed toward a display apparatus with improved reliability and quality and a method of manufacturing the display apparatus. However, these improved characteristics of the display apparatus are just an example, and the embodiments of the present disclosure are not limited thereto. Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure. According to one or more embodiments, a display apparatus includes a substrate, and an inorganic light-emitting diode provided on the substrate and including a pixel electrode, a first semiconductor layer, an intermediate layer, a second semiconductor layer, and an opposite electrode, wherein the first semiconductor layer includes a seed layer, a first-1 semiconductor layer provided on the seed layer, a first shield layer provided on the first-1 semiconductor layer and including a first opening defined therein, a first-2 semiconductor layer provided on the first shield layer, a second shield layer provided on the first-2 semiconductor layer and including a second opening defined therein, and a first-3 semiconductor layer provided on the second shield layer. According to one or more embodiments, the first-1 semiconductor layer may include a polycrystalline semiconductor material. According to one or more embodiments, the first-2 semiconductor layer may include a semiconductor material of a quasi-single crystal. According to one or more embodiments, the first-3 semiconductor layer may include a semiconductor material of a single crystal or a semiconductor material of a quasi-single crystal. According to one or more embodiments, the first shield layer may include an inorganic insulating material. According to one or more embodiments, the first shield layer may include at least one selected from among silicon oxide (SiOx), silicon oxynitride (SiON), and silicon nitride (SiNx). According to one or more embodiments, the second shield layer may include a transparent conductive oxide (TCO). According to one or more embodiments, the seed layer may include a material having a lattice constant similar to a lattice constant of a semiconductor material included in the first-1 semiconductor layer. According to one or more embodiments, the first-1 semiconductor layer may include gallium nitride (GaN), and the seed layer may include zinc oxide (ZnOx). According to one or more embodiments, the intermediate layer may be provided on the first semiconductor layer. According to one or more embodiments, the second semiconductor layer may be provided on the intermediate layer. According to one or more embodiments, a method of manufacturing a display apparatus includes forming a seed layer on a pixel electrode, forming a first-1 semiconductor layer on the seed layer through crystal growth, forming, on the first-1 semiconductor layer, a first shield layer including a first opening defined therein, forming a first-2 semiconductor layer on the first shield layer through crystal growth, forming, on the first-2 semiconductor layer, a second shield layer including a second opening defined therein, and forming a first-3 semiconductor layer on the second shield layer through crystal growth. According to one or more embodiments, the first-1 semiconductor layer may include a polycrystalline semiconductor material. According to one or more embodiments, the first-2 semiconductor layer may include a semiconductor material of a quasi-single crystal. According to one or more embodiments, the first-3 semiconductor layer may include a semiconduc