US-20260130014-A1 - LIGHT EMITTING ELEMENT AND DISPLAY DEVICE COMPRISING SAME

US20260130014A1US 20260130014 A1US20260130014 A1US 20260130014A1US-20260130014-A1

Abstract

Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and including a first surface facing the first semiconductor layer and a second surface facing the second semiconductor layer; and a doped layer formed on the first surface or the second surface of the active layer and having ions of the first polarity or the second polarity.

Inventors

Su Mi MOON

Assignees

SAMSUNG DISPLAY CO., LTD.

Dates

Publication Date: 20260507
Application Date: 20251215
Priority Date: 20190820

Claims (14)

1 . A light emitting element comprising: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and including a first surface facing the first semiconductor layer and a second surface facing the second semiconductor layer; and a doped layer disposed on the first surface or the second surface of the active layer and having ions with the first polarity or the second polarity.
2 . The light emitting element of claim 1 , wherein the doped layer includes a first doped layer having the first polarity and disposed on the first semiconductor layer.
3 . The light emitting element of claim 2 , wherein a concentration of ions having the first polarity in the first doped layer is higher than a concentration of ions having the first polarity in the first semiconductor layer.
4 . The light emitting element of claim 3 , wherein the first doped layer contacts the first surface of the active layer.
5 . The light emitting element of claim 3 , wherein the first doped layer is spaced apart from the first surface of the active layer.
6 . The light emitting element of claim 1 , wherein the doped layer includes a second doped layer having the second polarity and disposed on the second semiconductor layer.
7 . The light emitting element of claim 6 , wherein the second doped layer is directly disposed on an upper surface of the second semiconductor layer.
8 . The light emitting element of claim 6 , wherein the second doped layer contacts the second surface of the active layer.
9 . The light emitting element of claim 1 , further comprising an electrode layer disposed on the second semiconductor layer, wherein the doped layer includes a third doped layer disposed on the electrode layer.
10 . The light emitting element of claim 9 , wherein the third doped layer is disposed on an upper surface of the electrode layer.
11 . The light emitting element of claim 10 , wherein the electrode layer includes indium (In), and a content of indium in the third doped layer is higher than a content of indium in the electrode layer.
12 . The light emitting element of claim 9 , further comprising a sub-semiconductor layer disposed on the electrode layer and having the second polarity.
13 . The light emitting element of claim 9 , further comprising an insulating film surrounding outer surfaces of the first semiconductor layer, the second semiconductor layer, and the active layer, wherein the insulating film overlaps at least part of the electrode layer in a plan view.
14 . The light emitting element of claim 13 , wherein the insulating film includes: a first surface surrounding the electrode layer in an outer surface; and a second surface extended to the first surface and contacting the electrode layer, and the second surface has a shape in which at least a partial region thereof is curved.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application is a Divisional application of U.S. patent application Ser. No. 17/636,480, filed Feb. 18, 2022, which is a national entry of International Application No. PCT/KR2020/007233, filed on Jun. 3, 2020, which claims under 35 U.S.C. §§ 119(a) and 365(b) priority to and benefits of Korean Patent Application No. 10-2019-0101612, filed on Aug. 20, 2019, in the Korean Intellectual Property Office (KIPO), the entire contents of all of which are incorporated herein by reference. BACKGROUND 1. Technical Field The disclosure relates to a light emitting element and a display device including the same. 2. Description of Related Art The importance of display devices has steadily increased with the development of multimedia technology. In response thereto, various types of display devices such as an organic light emitting display (OLED), a liquid crystal display (LCD) and the like have been used. A display device is a device for displaying an image, and includes a display panel, such as an organic light emitting display panel or a liquid crystal display panel. The light emitting display panel may include light emitting elements, e.g., light emitting diodes (LED), and examples of the light emitting diode include an organic light emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light emitting diode using an inorganic material as a fluorescent material. SUMMARY Aspects of the disclosure provide a light emitting element having an improved electrical polarity by further including a doped layer. Aspects of the disclosure also provide a display device with an improved degree of alignment of light emitting elements by including the light emitting element. It should be noted that aspects of the disclosure are not limited thereto and other aspects, which are not mentioned herein, will be apparent to those of ordinary skill in the art from the following description. According to an embodiment of the disclosure, a light emitting element comprises a first semiconductor layer doped with a first polarity, a second semiconductor layer doped with a second polarity different from the first polarity, an active layer disposed between the first semiconductor layer and the second semiconductor layer and including a first surface facing the first semiconductor layer and a second surface facing the second semiconductor layer, and a doped layer disposed on the first surface or the second surface of the active layer and having ions with the first polarity or the second polarity. The doped layer may include a first doped layer having the first polarity and disposed on the first semiconductor layer. A concentration of ions having the first polarity in the first doped layer may be higher than a concentration of ions having the first polarity in the first semiconductor layer. The first doped layer may contact the first surface of the active layer. The first doped layer may be spaced apart from the first surface of the active layer. The doped layer may include a second doped layer having the second polarity and disposed on the second semiconductor layer. The second doped layer may be directly disposed on an upper surface of the second semiconductor layer. The second doped layer may contact the second surface of the active layer. The light emitting element may further comprise an electrode layer disposed on the second semiconductor layer, wherein the doped layer may include a third doped layer disposed on the electrode layer. The third doped layer may be disposed on an upper surface of the electrode layer. The electrode layer may include indium (In), and a content of indium in the third doped layer may be higher than a content of indium in the electrode layer. The light emitting element may further comprise a sub-semiconductor layer disposed on the electrode layer and having the second polarity. The light emitting element may further comprise an insulating film surrounding outer surfaces of the first semiconductor layer, the second semiconductor layer, and the active layer, wherein the insulating film may overlap at least part of the electrode layer in a plan view. The insulating film may include a first surface surrounding the electrode layer in an outer surface and a second surface extended to the first surface and contacting the electrode layer, and the second surface may have a shape in which at least a partial region thereof is curved. According to an embodiment of the disclosure, a display device comprising a first electrode disposed on a substrate and a second electrode spaced apart from the first electrode, and at least one light emitting element disposed between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode, wherein the light emitting element includes: a first semiconductor layer doped with a first polarity, a second semiconductor layer doped with a second polarity different