US-20260130015-A1 - LIGHT-EMITTING DIODE

US20260130015A1US 20260130015 A1US20260130015 A1US 20260130015A1US-20260130015-A1

Abstract

Provided are a light-emitting diode and a light-emitting device. The light-emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer alternately stacked in sequence. The first electrode is located on the epitaxial structure and electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and electrically connected to the second semiconductor layer. The first electrode and/or the second electrode has a titanium-free stack structure. Through the above arrangement, an anti-aging capability of a chip may be enhanced, thereby improving the reliability of the chip.

Inventors

Meijian WU
Jin Xu
Xiaoyong Yan
Zonglin LI
Xin Chen
Ke Liu

Assignees

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Dates

Publication Date: 20260507
Application Date: 20251103
Priority Date: 20241104

Claims (20)

1 . A light-emitting diode, comprising: an epitaxial structure, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence; a first electrode, located on the epitaxial structure and electrically connected to the first semiconductor layer; and a second electrode, located on the epitaxial structure and electrically connected to the second semiconductor layer; wherein the first electrode and/or the second electrode comprises a titanium-free stack structure.
2 . The light-emitting diode according to claim 1 , wherein the titanium-free stack structure comprises a gold layer located on a side farthest from the epitaxial structure.
3 . The light-emitting diode according to claim 2 , wherein a thickness of the gold layer is more than 50% of a thickness of the titanium-free stack structure.
4 . The light-emitting diode according to claim 2 , wherein the titanium-free stack structure further comprises a first nickel layer located on a side closest to the epitaxial structure.
5 . The light-emitting diode according to claim 4 , wherein the titanium-free stack structure further comprises at least one second nickel layer located beneath and in direct contact with the gold layer.
6 . The light-emitting diode according to claim 5 , wherein a thickness of the first nickel layer is less than a thickness of the at least one second nickel layer.
7 . The light-emitting diode according to claim 4 , wherein the titanium-free stack structure further comprises at least one metal layer, the first nickel layer is located between the at least one metal layer and the epitaxial structure, and a thickness of the first nickel layer is less than a thickness of the at least one metal layer.
8 . The light-emitting diode according to claim 2 , wherein the titanium-free stack structure comprises a plurality of nickel layers and a plurality of platinum layers, the plurality of nickel layers and the plurality of platinum layers are alternately stacked with each other, and a number of alternately stacked pairs ranges from 1 pair to 5 pairs.
9 . The light-emitting diode according to claim 8 , wherein in the titanium-free stack structure, a total thickness of the plurality of nickel layers does not exceed a total thickness of the plurality of platinum layers.
10 . A light-emitting diode, comprising: an epitaxial structure, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence; a first contact electrode, located on the epitaxial structure and electrically connected to the first semiconductor layer; a first electrode, located on the first contact electrode and electrically connected to the first contact electrode; a second contact electrode, located on the epitaxial structure and electrically connected to the second semiconductor layer; and a second electrode, located on the second contact electrode and electrically connected to the second contact electrode; wherein at least one of the first contact electrode, the first electrode, the second contact electrode, and the second electrode comprises a titanium-free stack structure.
11 . The light-emitting diode according to claim 10 , wherein the first contact electrode and/or the second contact electrode comprises a first bottom layer on a side closest to the epitaxial structure and a first top layer on a side farthest from the epitaxial structure.
12 . The light-emitting diode according to claim 11 , wherein the first bottom layer and the first top layer comprise a nickel layer, and a thickness of the first top layer is not greater than a thickness of the first bottom layer.
13 . The light-emitting diode according to claim 12 , wherein the first contact electrode and/or the second contact electrode further comprises a plurality of platinum layers, a plurality of nickel layers and the plurality of platinum layers are alternately stacked with each other, and a number of alternately stacked pairs ranges from 1 pair to 5 pairs.
14 . The light-emitting diode according to claim 13 , wherein a total thickness of the plurality of platinum layers on the first contact electrode or the second contact electrode is more than 50% of a thickness of the first contact electrode or a thickness of the second contact electrode.
15 . The light-emitting diode according to claim 13 , wherein in the first contact electrode and/or the second contact electrode, a thickness of a single nickel layer located between the first top layer and the first bottom layer is greater than a thickness of a single nickel layer located in the first top layer or the first bottom layer.
16 . The light-emitting diode according to claim 11 , wherein the first electrode and/or the second electrode comprises a second top layer on a side farthest from the epitaxial structure and a second bottom layer on a side closest to the epitaxial structure.
17 . The light-emitting diode according to claim 12 , wherein a thickness of the second top layer is more than 50% of a thickness of the first electrode or a thickness of the second electrode in which the second top layer is located.
18 . The light-emitting diode according to claim 16 , wherein the first bottom layer and the second bottom layer have the same metallic material, and/or the first top layer and the second bottom layer have the same metallic material.
19 . The light-emitting diode according to claim 16 , wherein the second bottom layer comprises a nickel layer, and the second top layer comprises a gold layer.
20 . The light-emitting diode according to claim 19 , wherein the first electrode and/or the second electrode further comprises a plurality of platinum layers, a plurality of nickel layers and the plurality of platinum layers are alternately stacked, and a number of alternately stacked pairs ranges from 1 pair to 4 pairs.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims the priority benefit of China application serial no. 202411562605.X, filed on Nov. 4, 2024. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification. BACKGROUND Technical Field The disclosure relates to the field of semiconductor technology, and in particular to a light-emitting diode. Related Art Light-emitting diode (LED) is a semiconductor light-emitting element, and is usually made of semiconductors such as GaN, GaAs, GaP, and GaAsP. A core of the LED is a PN junction with a characteristic of light-emitting. The LED has advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered as one of the most potential light sources currently. The existing LED generally has metallic electrodes including Ti in design. Ti easily causes voids in a fabricating process, resulting in problems of unstable reliability and extremely high abnormal aging rates. Particularly during long-term use, conventional metallic electrodes including Ti in design easily cause accelerated aging of the LED device, reduce luminous efficiency, and even occur failure phenomena. Therefore, how to improve an anti-aging risk of a chip is a major problem that needs to be solved by those skilled in the art currently. SUMMARY To solve at least one deficiency existing in the light-emitting diodes of the prior art, a purpose of the disclosure is to provide a light-emitting diode that can enhance an anti-aging capability of a chip, thereby improving reliability of the chip. In a first aspect, the disclosure provides a light-emitting diode including an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer alternately stacked in sequence. The first electrode is located on the epitaxial structure and electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and electrically connected to the second semiconductor layer. The first electrode and/or the second electrode is a titanium-free stack structure. In a second aspect, the disclosure provides a light-emitting diode. The light-emitting diode includes an epitaxial structure, a first contact electrode, a first electrode, a second contact electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer alternately stacked in sequence. The first contact electrode is located on the epitaxial structure and electrically connected to the first semiconductor layer. The first electrode is located on the first contact electrode and electrically connected to the first contact electrode. The second contact electrode is located on the epitaxial structure and electrically connected to the second semiconductor layer. The second electrode is located on the second contact electrode and electrically connected to the second contact electrode. At least one of the first contact electrode, the first electrode, the second contact electrode, and the second electrode is a titanium-free stack structure. Based on the above, compared with the prior art, the light-emitting diode provided by the disclosure may effectively avoid the problems of unstable reliability and extremely high abnormal aging rates of electrodes by limiting the material of the electrodes to the titanium-free stack structure, thereby enhancing the reliability and anti-aging capability of the entire chip. Other features and beneficial effects of the disclosure are described in the subsequent specification, and in part become apparent from the specification, or are learned through implementing the disclosure. The objectives and other beneficial effects of the disclosure may be realized and obtained through the structures particularly pointed out in the specification, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS In order to more clearly illustrate the technical solutions in the embodiments of the disclosure or the prior art, the drawings required for use in the description of the embodiments or the prior art will be briefly described below. Obviously, the drawings in the following description are some embodiments of the disclosure. For those skilled in the art, other drawings may also be obtained based on these drawings without creation. In the following description, the positional relationships described in the drawings, unless specifically indicated, are all based on the direction in which the components are illustrated in the drawings. FIG. 1 is a cross-sectional view of a light-emitting diode provided by an embodiment in Embodiment 1 of the disclosure. FIG. 2 is a partial enlarged view of A in FIG. 1. FIG. 3 is a cross-sectional view of a light-emitting diode provided by another embodiment in Embodiment 1 of