US-20260130018-A1 - LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE

US20260130018A1US 20260130018 A1US20260130018 A1US 20260130018A1US-20260130018-A1

Abstract

A light-emitting diode and a light-emitting device are provided. The light-emitting diode includes a semiconductor stack layer, an insulating reflective layer and an electrode structure. The insulating reflective layer defines a first opening and a second opening therein. A second electrode in the electrode structure includes a second connection electrode. In a direction gradually far away from the insulating reflective layer, the second connection electrode at least includes a transparent adhesive layer and a reflective layer located above the transparent adhesive layer. The transparent adhesive layer is a transparent material layer. The transparent adhesive layer can be a same material layer as a current spreading layer above a second semiconductor layer, thus, the transparent adhesive layer can form good adhesion with the current spreading layer. The reflective layer includes an Ag layer with high reflectivity, which can play a reflective role, thereby increasing light output of the light-emitting diode.

Inventors

Huihuang Huang
Jin Xu
Fei Liu
Ling-yuan HONG
Weida ZHANG
Qing Wang
Cong Li
Hongquan Guo

Assignees

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Dates

Publication Date: 20260507
Application Date: 20251103
Priority Date: 20241104

Claims (14)

1 . A light-emitting diode, comprising: a semiconductor stack layer, comprising a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked in that order; an insulating reflective layer, located on a side of the second semiconductor layer, and at least covering a surface of the semiconductor stack layer, wherein the insulating reflective layer defines a first opening and a second opening therein, the first opening is located above the first semiconductor layer, the second opening is located above the second semiconductor layer, and a thickness of the insulating reflective layer is in a range of 2 microns (μm) to 6 μm; and an electrode structure, located above the insulating reflective layer, wherein the electrode structure comprises a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer; and wherein the second electrode comprises a second connection electrode, the second connection electrode is filled in the second opening and covers a part of the insulating reflective layer located above the second semiconductor layer; and in a direction facing away from the insulating reflective layer, the second connection electrode at least comprises a transparent adhesive layer and a reflective layer located above the transparent adhesive layer.
2 . The light-emitting diode as claimed in claim 1 , wherein, at the first opening and the second opening, an included angle between a sidewall of the insulating reflective layer and a plane where the semiconductor stack layer is located is in a range of 40° to 70°.
3 . The light-emitting diode as claimed in claim 1 , wherein a material layer of the transparent adhesive layer comprises at least one of indium tin oxide (ITO) and indium gallium oxide (IGO).
4 . The light-emitting diode as claimed in claim 1 , wherein a thickness of the transparent adhesive layer is in a range of 10 angstroms (Å) to 100 Å.
5 . The light-emitting diode as claimed in claim 1 , wherein a material of the reflective layer comprises silver (Ag).
6 . The light-emitting diode as claimed in claim 3 , wherein, when projected onto a plane where the surface of the semiconductor stack layer is located, a projection boundary of the second connection electrode is located outside a projection boundary of the second opening.
7 . The light-emitting diode as claimed in claim 1 , wherein the first electrode is filled in the first opening and is electrically connect to the first semiconductor layer.
8 . The light-emitting diode as claimed in claim 7 , wherein the first electrode comprises a first contact electrode and a first connection electrode, the first contact electrode is located above the first semiconductor layer, the first opening exposes the first contact electrode, and the first connection electrode is filled in the first electrode and is connected to the first contact electrode.
9 . The light-emitting diode as claimed in claim 8 , wherein a maximum opening length of the first opening is less than a maximum length of the first contact electrode.
10 . The light-emitting diode as claimed in claim 6 , further comprising a current spreading layer and a current barrier layer, wherein the current spreading layer is located between the insulating reflective layer and the second semiconductor layer, the current barrier layer is located between the current spreading layer and the second semiconductor layer, the current barrier layer covers a part of the second semiconductor layer, and is at least located below the second opening.
11 . The light-emitting diode as claimed in claim 1 , further comprising: a second insulating protective layer, located above the electrode structure and the insulating reflective layer; and pad electrodes, located above the second insulating protective layer, wherein the pad electrodes comprise a first pad and a second pad arranged at intervals, the first pad penetrates through the second insulating protective layer to connect to the first electrode, and the second pad penetrates through the second insulating protective layer to connect to the second electrode.
12 . The light-emitting diode as claimed in claim 11 , wherein, in a direction from the second connection electrode to the second pad, the second insulating protective layer at least comprises an aluminum oxide (Al 2 O 3 ) layer and a silicon oxide (SiO 2 ) layer sequentially stacked in that order.
13 . The light-emitting diode as claimed in claim 12 , wherein a thickness of the Al 2 O 3 layer is in a range of 200 Å to 1000 Å, and a thickness of the SiO 2 layer is in a range of 1 μm to 3 μm.
14 . A light-emitting device, comprising a circuit board and a plurality of light-emitting units located on the substrate, and each of the plurality of light-emitting units comprises the light-emitting diode as claimed in claim 1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to Chinese Patent Application No. 202411562214.8, filed on Nov. 4, 2024, which is herein incorporated by reference in its entirety. TECHNICAL FIELD The disclosure relates to the technical field of semiconductors, and more particularly to a light-emitting diode and a light-emitting device. BACKGROUND Light-emitting diodes (LEDs) are widely used in various fields such as display devices, vehicle lamps, and general lighting due to features of high reliability, long lifespan, and low power consumption. Gallium nitride (GaN)-based flip-chip LEDs are increasingly favored by the market due to advantages such as good heat dissipation, high luminous efficiency, and excellent stability. During chip fabrication, a contact electrode (PAD1) is typically formed after deposition of indium tin oxide (ITO) to establish good ohmic contact with the ITO. This process increases the complexity of the fabrication steps and raises costs. In order to reduce the chip costs, simplified flip-chips have become a focus of further research. In the fabrication of simplified flip-chips, a distributed Bragg reflector (DBR) layer is often directly deposited over the ITO. This not only enhances the effective reflectivity of the DBR but also omits the need for PAD1 fabrication, thereby reducing costs. After depositing the DBR, vias are etched for electrode connection. These electrodes can utilize metal materials with high reflectivity combined with the DBR to form an omnidirectional reflector (ODR) structure with improved reflection; or they can use metal materials with good adhesion to form good ohmic contact with the ITO. However, there is no single electrode that fulfills both of these requirements: 1. forming good ohmic contact with ITO; and 2. combining with the DBR to form an effective ODR structure that enhances light reflection. Consequently, electrode structures of the light-emitting diodes in the related art negatively impact the brightness and voltage characteristics of the chip. SUMMARY In view of defects and disadvantages of flip-chip light-emitting diode in the related art, a purpose of the disclosure is to provide a light-emitting diode and a light-emitting device. After covering an insulating reflective layer above a semiconductor stack layer, a second connection electrode is first formed in an opening of the insulating reflective layer to increase light reflection at the opening of the insulating reflective layer and improve light output effect of the light-emitting diode. In order to achieve the above purpose and other relative purposes, in the first aspect, the disclosure provides a light-emitting diode, including a semiconductor stack layer, an insulating reflective layer and an electrode structure. The semiconductor stack layer includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked in that order. The insulating reflective layer is located on a side of the second semiconductor layer, and at least covers a surface of the semiconductor stack layer. The insulating reflective layer defines a first opening and a second opening therein, the first opening is located above the first semiconductor layer, the second opening is located above the second semiconductor layer, and a thickness of the insulating reflective layer is in a range of 2 microns (μm) to 6 μm. The electrode structure is located above the insulating reflective layer. The electrode structure includes a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The second electrode includes a second connection electrode, the second connection electrode is filled in the second opening and covers a part of the insulating reflective layer located above the second semiconductor layer. In a direction gradually far away from the insulating reflective layer, the second connection electrode at least includes a transparent adhesive layer and a reflective layer located above the transparent adhesive layer. In the second aspect, the disclosure provides a light-emitting device, including a circuit board and multiple light-emitting units located on the substrate, and each of the multiple light-emitting units includes the light-emitting diode provided by the disclosure. As described above, the light-emitting diode and the light-emitting device provided by the disclosure have at least the following beneficial technical effects. The light-emitting diode of the disclosure includes the semiconductor stack layer, the insulating reflective layer and the electrode structure. The insulating reflective layer defines the first opening and the second opening therein. The second electrode in the electrode structure includes the second connection electrode, and the second connection electrode is filled in the second opening of the insulating reflective layer and is electrically