US-20260130024-A1 - LIGHT EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME

Abstract

A light emitting element includes a core structure, which includes a first light emitting element core, a second light emitting element core spaced apart from the first light emitting element core, and a first bonding layer between the first light emitting element core and the second light emitting element core, each of the first light emitting element core and the second light emitting element core includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and an element active layer between the first semiconductor layer and the second semiconductor layer, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the first light emitting element core is opposite to a stacking direction of the first semiconductor layer, the element active layer and the second semiconductor layer of the second light emitting element core.

Inventors

• Buem Joon Kim
• Jong Hyuk KANG
• Won Ho Lee
• Hyun Deok Im
• Eun A. Cho

Assignees

• SAMSUNG DISPLAY CO., LTD.

Dates

Publication Date

20260507

Application Date

20251229

Priority Date

20210408

Claims (20)

1. 1 . An electronic device comprising: a first electrode and a second electrode located on a substrate and spaced from each other; and a light emitting element including a core structure extending in a first direction, wherein the core structure includes: a first light emitting element core extending in the first direction; a second light emitting element core spaced apart from the first light emitting element core and extending in the first direction; and a first bonding layer between the first light emitting element core and the second light emitting element core, wherein side surfaces of each of the first light emitting element core, the first bonding layer, and the second light emitting element core are aligned with each other, each of the first light emitting element core and the second light emitting element core includes: a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an element active layer between the first semiconductor layer and the second semiconductor layer, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the first light emitting element core is opposite to a stacking direction of the first semiconductor layer, the element active layer and the second semiconductor layer of the second light emitting element core.
2. 2 . The electronic device of claim 1 , wherein the first semiconductor layer, the element active layer, and the second semiconductor layer in the first light emitting element core are sequentially arranged in the first direction, and the first semiconductor layer, the element active layer, and the second semiconductor layer in the second light emitting element core are sequentially arranged in a direction opposite to the first direction.
3. 3 . The electronic device of claim 1 , wherein the second light emitting element core is spaced apart from the first light emitting element core in the first direction, and each of the first light emitting element core, the first bonding layer and the second light emitting element core have a circular cross section having a same diameter.
4. 4 . The electronic device of claim 3 , wherein the first semiconductor layer of each of the first light emitting element core and the second light emitting element core is doped with a first conductivity type dopant, and the second semiconductor layer of each of the first light emitting element core and the second light emitting element core is doped with a second conductivity type dopant.
5. 5 . The electronic device of claim 4 , wherein the first conductivity type dopant is an n type dopant, and the second conductivity type dopant is a p type dopant.
6. 6 . The electronic device of claim 5 , wherein the first semiconductor layer of the first light emitting element core is located at a first end of the light emitting element, and the first semiconductor layer of the second light emitting element core is located at a second end of the light emitting element.
7. 7 . The electronic device of claim 1 , wherein the core structure has a symmetrical structure with respect to a reference line passing through a center of the core structure in a second direction intersecting the first direction.
8. 8 . The electronic device of claim 1 , further comprising: an element insulating film surrounding a side surface of the core structure.
9. 9 . The electronic device of claim 1 , wherein each of the first light emitting element core and the second light emitting element core includes a reflective electrode layer, the reflective electrode layer of the first light emitting element core is located between and directly contacts the second semiconductor layer of the first light emitting element core and the first bonding layer, and the reflective electrode layer of the second light emitting element core is located between and directly contacts the second semiconductor layer of the second light emitting element core and the first bonding layer.
10. 10 . The electronic device of claim 9 , wherein each of the reflective electrode layers includes a reflective metal selected from among aluminum and silver or includes a distributed Bragg reflector (DBR) layer, the light emitting element includes a first end opposite a second end, the first semiconductor layer of the first light emitting element core is located at the first end, the first semiconductor layer of the second light emitting element core is located at the second end, the reflective electrode layer of the first light emitting element core redirects light produced by the element active layer of the first light emitting element core and traveling towards the first bonding layer back towards the first end, and the reflective electrode layer of the second light emitting element core redirects light produced by the element active layer of the second light emitting element core and traveling towards the first bonding layer back towards the second end.
11. 11 . The electronic device of claim 1 , wherein the first bonding layer includes a eutectic metal alloy or a fusible metal alloy, and wherein the first bonding layer electrically connects the first light emitting element core to the second light emitting element core.
12. 12 . The electronic device of claim 1 , wherein the core structure further includes: a third light emitting element core between the first light emitting element core and the first bonding layer; a fourth light emitting element core between the second light emitting element core and the first bonding layer; a second bonding layer between the first light emitting element core and the third light emitting element core; and a third bonding layer between the second light emitting element core and the fourth light emitting element core, wherein each of the third light emitting element core and the fourth light emitting element core includes: a first semiconductor layer; a second semiconductor layer spaced from the first semiconductor layer; and an element active layer between the first semiconductor layer and the second semiconductor layer.
13. 13 . The electronic device of claim 12 , wherein a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the third light emitting element core is same as a stacking direction of the second light emitting element core, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the fourth light emitting element core is same as a stacking direction of the first light emitting element core.
14. 14 . The electronic device of claim 1 , wherein a length of the first semiconductor layer of the first light emitting element core is greater than a length of the second semiconductor layer of the first light emitting element core, a length of the first semiconductor layer of the second light emitting element core is greater than a length of the second semiconductor layer of the second light emitting element core, and the first semiconductor layer of the first light emitting element core and the first semiconductor layer of the second light emitting element core are located at respective ends of the light emitting element.
15. 15 . An electronic device comprising: a first electrode and a second electrode located on a substrate and spaced from each other; and a light emitting element including a core structure extending in a first direction, wherein the core structure includes: a first light emitting element core extending in the first direction; a second light emitting element core spaced apart from the first light emitting element core and extending in the first direction; and a bonding layer between the first light emitting element core and the second light emitting element core, each of the first light emitting element core and the second light emitting element core includes: a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an element active layer between the first semiconductor layer and the second semiconductor layer, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the first light emitting element core is opposite to a stacking direction of the first semiconductor layer, the element active layer and the second semiconductor layer of the second light emitting element core; a first connection electrode electrically connected to the first electrode and the bonding layer; and a second connection electrode electrically connected to the second electrode and ends of the light emitting element.
16. 16 . The electronic device of claim 15 , wherein the first connection electrode electrically contacts a portion of the first electrode and a portion of the bonding layer, and the second connection electrode electrically contacts a portion of the second electrode and ends of the light emitting element.
17. 17 . The electronic device of claim 16 , wherein the light emitting element includes an element insulating film surrounding a side surface of the core structure.
18. 18 . The electronic device of claim 17 , wherein the element insulating film exposes at least a portion of the bonding layer.
19. 19 . The electronic device of claim 18 , wherein the first connection electrode contacts the bonding layer exposed by the element insulating film.
20. 20 . The electronic device of claim 15 , wherein the electronic device comprises at least one of a television, a laptop computer, a monitor, a billboard, Internet of Things device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game machine, a digital camera, or a camcorder.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application is a continuation of U.S. patent application Ser. No. 17/522,373, filed Nov. 9, 2021, which claims priority to and the benefit of Korean Patent Application No. 10-2021-0045665, filed Apr. 8, 2021, the entire content of both of which is incorporated herein by reference. BACKGROUND 1. Technical Field The disclosure relates to a light emitting element and a display device including the same. 2. Description of the Related Art The importance of display devices has steadily increased with the development of multimedia technology. In response thereto, various types of display devices such as an organic light emitting display (OLED), a liquid crystal display (LCD) and the like have been used. A display device is a device for displaying an image, and may include a display panel, such as an organic light emitting display panel or a liquid crystal display panel. The light emitting display panel may include light emitting elements, for example, light emitting diodes (LED), and examples of the light emitting diode include an organic light emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light emitting diode using an inorganic material as a fluorescent material. It is to be understood that this background of the technology section is, in part, intended to provide useful background for understanding the technology. However, this background of the technology section may also include ideas, concepts, or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of the subject matter disclosed herein. SUMMARY Aspects of the disclosure provide a light emitting element capable of omitting a deflection alignment process by fixing light emitting element cores, each including a first semiconductor layer, an element active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the element active layer, such that they are symmetrical to each other with respect to a bonding layer. Aspects of the disclosure also provide a display device including the light emitting element. However, aspects of the disclosure are not restricted to those set forth herein. The above and other aspects of the disclosure will become more apparent to one of ordinary skill in the art to which the disclosure pertains by referencing the detailed description of the disclosure given below. According to an embodiment, the light emitting element may include a core structure extending in a first direction, wherein the core structure may include a first light emitting element core extending in the first direction; a second light emitting element core spaced apart from the first light emitting element core and extending in the first direction; and a first bonding layer disposed between the first light emitting element core and the second light emitting element core, each of the first light emitting element core and the second light emitting element core may include a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an element active layer disposed between the first semiconductor layer and the second semiconductor layer, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the first light emitting element core may be opposite to a stacking direction of the first semiconductor layer, the element active layer and the second semiconductor layer of the second light emitting element core. In an embodiment, the first semiconductor layer, the element active layer in the first light emitting element core, and the second semiconductor layer may be sequentially disposed in the first direction, and the first semiconductor layer, the element active layer, and the second semiconductor layer in the second light emitting element core may be sequentially disposed in a direction opposite to the first direction. In an embodiment, the second light emitting element core may be spaced apart from the first light emitting element core in the first direction. In an embodiment, the first semiconductor layer of each of the first light emitting element core and the second light emitting element core may be doped with a first conductivity type dopant, and the second semiconductor layer of each of the first light emitting element core and the second light emitting element core may be doped with a second conductivity type dopant. In an embodiment, the first conductivity type may be an n type, and the second conductivity type may be a p type. In an embodiment, the first semiconductor layer of the first light emitting element core may be disposed at a first end of the light emitting element, and the first semiconductor layer of the second light emitting element core may be disposed at a second end of the light emitting element. In an embodiment,