US-20260130125-A1 - RESONANT CIRCUIT DEVICE COMPRISING QUBIT AND METHOD FOR MANUFACTURING THE SAME

Abstract

A resonant circuit device is provided. A resonant circuit device comprising a qubit, comprising: a first qubit; a first lower electrode disposed spaced apart from the first qubit in a first direction; an insulating layer disposed on the first qubit and the first lower electrode; a first upper electrode disposed on the insulating layer; a first through via connecting the first qubit and the first upper electrode and disposed through the insulating layer; and a second through via connecting the first upper electrode and the first lower electrode and disposed through the insulating layer.

Inventors

• Jae Yoon Shim
• Seung Young SEO

Assignees

• POSTECH Research and Business Development Foundation

Dates

Publication Date

20260507

Application Date

20251029

Priority Date

20241106

Claims (20)

1. 1 . A resonant circuit device comprising a qubit, comprising: a first qubit; a first lower electrode disposed spaced apart from the first qubit in a first direction; an insulating layer disposed on the first qubit and the first lower electrode; a first upper electrode disposed on the insulating layer; a first through via connecting the first qubit and the first upper electrode and disposed through the insulating layer; and a second through via connecting the first upper electrode and the first lower electrode and disposed through the insulating layer.
2. 2 . The resonant circuit device comprising a qubit of claim 1 , further comprising: a plurality of upper electrodes disposed on the insulating layer and spaced apart from each other; a plurality of lower electrodes disposed under the insulating layer and spaced apart from each other; and a plurality of through vias connecting each of the plurality of upper electrodes and each of the plurality of lower electrodes and passing through the insulating layer, wherein the plurality of upper electrodes comprises the first upper electrode, the plurality of lower electrodes comprises the first lower electrode, the plurality of through vias comprises the second through via, and the plurality of through vias is spaced apart from the first through via, and wherein a resonant frequency of the resonant circuit device is determined based on a combined number of the first through via and the plurality of through vias.
3. 3 . The resonant circuit device comprising a qubit of claim 1 , wherein the first through via and the second through via extend along a second direction intersecting the first direction.
4. 4 . The resonant circuit device comprising a qubit of claim 1 , wherein a lower part of the first through via is in direct contact with the first qubit, an upper part of the first through via is in direct contact with a first portion of the first upper electrode, an upper part of the second through via is in direct contact with a second portion of the first upper electrode, and a lower part of the second through via is in direct contact with a first portion of the first lower electrode.
5. 5 . The resonant circuit device comprising a qubit of claim 1 , further comprising: a second qubit disposed spaced apart from the first qubit; a second upper electrode spaced apart from the first upper electrode and disposed on the insulating layer; a second lower electrode spaced apart from the first lower electrode and disposed under the insulating layer; and a third through via connecting the second upper electrode and the second qubit and disposed through the insulating layer, wherein the first lower electrode and the second lower electrode are disposed between the first qubit and the second qubit.
6. 6 . The resonant circuit device comprising a qubit of claim 5 , further comprising: a plurality of upper electrodes disposed on the insulating layer and spaced apart from each other; a plurality of lower electrodes disposed under the insulating layer and spaced apart from each other; and a plurality of through vias connecting each of the plurality of upper electrodes and each of the plurality of lower electrodes and passing through the insulating layer, wherein the plurality of upper electrodes comprises the first upper electrode and the second upper electrode, the plurality of lower electrodes comprises the first lower electrode and the second lower electrode, the plurality of through vias comprises the second through via, and the plurality of through vias is spaced apart from each of the first through via and the third through via.
7. 7 . The resonant circuit device comprising a qubit of claim 6 , wherein each of the plurality of upper electrodes is disposed spaced apart from each other along the first direction, and each of the plurality of through vias is disposed spaced apart from each other along the first direction.
8. 8 . The resonant circuit device comprising a qubit of claim 6 , wherein each of the plurality of upper electrodes comprises: a first upper electrode group extending in the first direction; and a second upper electrode group extending along a third direction intersecting the first direction, wherein the plurality of through vias further comprises a fourth through via spaced apart from the second through via in the third direction.
9. 9 . The resonant circuit device comprising a qubit of claim 1 , further comprising: a transmission line spaced apart from the first upper electrode and disposed on the insulating layer; a second upper electrode spaced apart from the first upper electrode and disposed on the insulating layer; a second lower electrode spaced apart from the first lower electrode and disposed under the insulating layer; and a third through via connecting the second upper electrode and the second lower electrode and disposed through the insulating layer, wherein the second upper electrode is disposed between the first upper electrode and the transmission line, and the second upper electrode and the transmission line are connected to each other.
10. 10 . The resonant circuit device comprising a qubit of claim 9 , further comprising: a plurality of upper electrodes disposed on the insulating layer and spaced apart from each other; a plurality of lower electrodes disposed under the insulating layer and spaced apart from each other; and a plurality of through vias connecting each of the plurality of upper electrodes and each of the plurality of lower electrodes and passing through the insulating layer, wherein the plurality of upper electrodes comprises the first upper electrode and the second upper electrode, the plurality of lower electrodes comprises the first lower electrode and the second lower electrode, the plurality of through vias comprises the second through via, and the plurality of through vias is spaced apart from each of the first through via and the third through via.
11. 11 . The resonant circuit device comprising a qubit of claim 1 , wherein the first upper electrode and the first through via include the same material, and the first lower electrode includes a material different from that included in each of the first upper electrode and the first through via.
12. 12 . The resonant circuit device comprising a qubit of claim 10 , wherein each of the plurality of upper electrodes comprises: a first upper electrode group extending in the first direction; and a second upper electrode group extending along a third direction intersecting the first direction, wherein the plurality of through vias further comprises a fourth through via spaced apart from the second through via in the third direction.
13. 13 . A resonant circuit device comprising a qubit, comprising: a first layer comprising a first qubit and a plurality of lower electrodes disposed spaced apart from the first qubit in a first direction; an insulating layer on the first layer; and a second layer disposed on the insulating layer and comprising a plurality of upper electrodes, wherein the insulating layer comprises: a plurality of through vias connecting each of the plurality of lower electrodes and each of the plurality of upper electrodes and passing through the insulating layer; and a first through via connecting a first portion of a first upper electrode of the plurality of upper electrodes and the first qubit and passing through the insulating layer, and wherein a resonant frequency is determined based on a combined number of the plurality of through vias and the first through via.
14. 14 . The resonant circuit device comprising a qubit of claim 13 , wherein a lower part of the first through via is in direct contact with the first qubit, an upper part of the first through via is in direct contact with a first portion of the first upper electrode, the plurality of through vias comprises a second through via, and the plurality of lower electrodes comprises a first lower electrode, an upper part of the second through via is in direct contact with a second portion of the first upper electrode, and a lower part of the second through via is in direct contact with a first portion of the first lower electrode.
15. 15 . The resonant circuit device comprising a qubit of claim 13 , further comprising: a second qubit spaced apart from the first qubit and disposed in the first layer, wherein the plurality of upper electrodes comprises a second upper electrode spaced apart from the first upper electrode, the plurality of lower electrodes comprises a first lower electrode disposed between the first qubit and the second qubit, and the plurality of through vias comprises a second through via connecting a second portion of the first upper electrode and a first portion of the first lower electrode and passing through the insulating layer.
16. 16 . The resonant circuit device comprising a qubit of claim 15 , wherein each of the plurality of upper electrodes is disposed spaced apart from each other along the first direction, and each of the plurality of through vias is disposed spaced apart from each other along the first direction.
17. 17 . The resonant circuit device comprising a qubit of claim 15 , wherein each of the plurality of upper electrodes comprises: a first upper electrode group extending in the first direction; and a second upper electrode group extending along a third direction intersecting the first direction, wherein the plurality of through vias further comprises a fourth through via spaced apart from the second through via in the third direction.
18. 18 . The resonant circuit device comprising a qubit of claim 13 , further comprising: a transmission line spaced apart from the first upper electrode and disposed on the insulating layer, wherein the plurality of upper electrodes comprises a second upper electrode spaced apart from the first upper electrode, the plurality of lower electrodes comprises a first lower electrode and a second lower electrode disposed between the first qubit and the transmission line and spaced apart from each other, the plurality of through vias comprises a second through via connecting the second upper electrode and the second lower electrode and disposed through the insulating layer, the second upper electrode is disposed between the first upper electrode and the transmission line, and the second upper electrode and the transmission line are connected to each other.
19. 19 . The resonant circuit device comprising a qubit of claim 18 , wherein each of the plurality of upper electrodes is disposed spaced apart from each other along the first direction, and each of the plurality of through vias is disposed spaced apart from each other along the first direction.
20. 20 . A method of manufacturing a resonant circuit device comprising a qubit, comprising: forming a first layer comprising a first qubit and a plurality of lower electrodes disposed spaced apart from the first qubit; forming an insulating layer on the first layer; forming a patterned first mask layer on the insulating layer; forming a plurality of through via holes, which passes through the insulating layer, exposes part of the first qubit, and exposes part of each of the plurality of lower electrodes, based on the patterned first mask layer; forming a plurality of through vias by filling the plurality of through via holes with a through via material; forming a through via material layer by covering an upper surface of the insulating layer and the plurality of through vias with the through via material; forming a patterned second mask layer on the through via material layer; and forming a plurality of upper electrodes, which exposes part of the upper surface of the insulating layer and is connected to each of the plurality of through vias, based on the patterned second mask layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority under 35 U.S. C § 119 to Korean Patent Application No. 10-2024-0155976 filed on Nov. 6, 2024, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference. TECHNICAL FIELD The disclosure relates to a resonant circuit device comprising a qubit and a method for manufacturing the same. BACKGROUND The content set forth in this section merely provides background information on the present embodiments and does not constitute prior art. A resonant circuit comprising a qubit has comprised a structure in which the qubit and the resonator are disposed on a two-dimensional plane. In addition, the layer containing the qubit and the resonator and another layer could be connected via a through via (e.g., through-silicon via (TSV)). Furthermore, this has resulted in a problem that it is difficult to reduce the area occupied by the resonator itself, and the through vias have been treated as a secondary component that only serves for connection. Therefore, there has been a need for a structure that can reduce the area occupied by the resonator itself. SUMMARY It is an object of the present disclosure to provide a resonant circuit device comprising a qubit that can reduce the area occupied by a resonator, and a method for manufacturing the same. In addition, it is an object of the present disclosure to provide a resonant circuit device comprising a qubit that can determine the resonant frequency of a resonator by using through vias, and a method for manufacturing the same. The objects of the present disclosure are not limited to the objects mentioned above, and other objects and advantages of the present disclosure that have not been mentioned can be understood by the following description and will be more clearly understood by the embodiments of the present disclosure. Further, it will be readily appreciated that the objects and advantages of the present disclosure can be realized by the means set forth in the claims and combinations thereof. According to some aspects of the disclosure, a resonant circuit device comprising a qubit, comprising: a first qubit; a first lower electrode disposed spaced apart from the first qubit in a first direction; an insulating layer disposed on the first qubit and the first lower electrode; a first upper electrode disposed on the insulating layer; a first through via connecting the first qubit and the first upper electrode and disposed through the insulating layer; and a second through via connecting the first upper electrode and the first lower electrode and disposed through the insulating layer. According to some aspects, a plurality of upper electrodes disposed on the insulating layer and spaced apart from each other; a plurality of lower electrodes disposed under the insulating layer and spaced apart from each other; and a plurality of through vias connecting each of the plurality of upper electrodes and each of the plurality of lower electrodes and passing through the insulating layer, wherein the plurality of upper electrodes comprises the first upper electrode, the plurality of lower electrodes comprises the first lower electrode, the plurality of through vias comprises the second through via, and the plurality of through vias is spaced apart from the first through via, and wherein a resonant frequency of the resonant circuit device is determined based on a combined number of the first through via and the plurality of through vias. According to some aspects, wherein the first through via and the second through via extend along a second direction intersecting the first direction. According to some aspects, wherein a lower part of the first through via is in direct contact with the first qubit, an upper part of the first through via is in direct contact with a first portion of the first upper electrode, an upper part of the second through via is in direct contact with a second portion of the first upper electrode, and a lower part of the second through via is in direct contact with a first portion of the first lower electrode. According to some aspects, a second qubit disposed spaced apart from the first qubit; a second upper electrode spaced apart from the first upper electrode and disposed on the insulating layer; a second lower electrode spaced apart from the first lower electrode and disposed under the insulating layer; and a third through via connecting the second upper electrode and the second qubit and disposed through the insulating layer, wherein the first lower electrode and the second lower electrode are disposed between the first qubit and the second qubit. According to some aspects, a plurality of upper electrodes disposed on the insulating layer and spaced apart from each other; a plurality of lower electrodes disposed under the insulating layer and spaced apart from each other; and a plurality of through vias connecting each of the plurality of upper el