US-20260130141-A1 - METHOD AND SYSTEM FOR SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL ON METAL SURFACE

Abstract

A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface is disclosed. An exemplary method includes using a first reactant to selectively form desired terminal functional groups on the non-metal surface and selectively reacting a second reactant with the terminal functional groups to selectively form an organic layer on the non-metal surface.

Inventors

• Adam Vianna
• Krzysztof Kamil Kachel
• Aaron McLeod
• Leonard Rodriguez
• Kristina Paula Martinez

Assignees

• ASM IP HOLDING B.V.

Dates

Publication Date

20260507

Application Date

20251030

Claims (20)

1. 1 . A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface, the method comprising: providing a substrate within a reaction chamber of a reactor; providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metal surface, relative to the metal surface, to form —OSiH functional groups on the non-metal surface; and providing a second reactant, wherein the second reactant selectively reacts with the —OSiH functional groups, relative to the metal surface, to selectively form an organic layer on the non-metal surface, relative to the metal surface.
2. 2 . The method of claim 1 , wherein the first reactant comprises an amino silane.
3. 3 . The method of claim 2 , wherein the amino silane comprises a silicon bonded to at least one nitrogen and at least one hydrogen.
4. 4 . The method of claim 1 , wherein the metal surface comprises a metallic material.
5. 5 . The method of claim 1 , wherein the metal surface consists essentially of one or more of a metal or a metal alloy.
6. 6 . The method of claim 1 , wherein the second reactant comprises an alkene or an alkyne terminal functional group.
7. 7 . The method of claim 1 , wherein the second reactant comprises a C2-C18, C2-C10, or C2-C8 linear or branched or cyclic hydrocarbon or fluorine-substituted derivative thereof.
8. 8 . The method of claim 1 , wherein the second reactant is represented by the formula C x H y F z , where X is a whole number between about 2 and about 24, y is a whole number between 0 and about 36, and z is a whole number between 0 and about 36.
9. 9 . The method of claim 1 , wherein the second reactant comprises one or more of a thiol or a disulfide.
10. 10 . The method of claim 9 , wherein the thiol is represented by the formula R—SH, wherein R is a C1-C18 linear or branched or cyclic hydrocarbon or fluorine-substituted derivative thereof.
11. 11 . The method of claim 9 , wherein the disulfide is represented by the formula R′—S—S—R″, wherein each R′ and R″ is independently a C1-C18 linear or branched or cyclic hydrocarbon or fluorine-substituted derivative thereof.
12. 12 . The method of claim 1 , wherein the second reactant comprises one or more of an alcohol or an aldehyde.
13. 13 . The method of claim 12 , wherein the aldehyde is represented by the formula: and where R is a C1-C18 linear or branched or cyclic hydrocarbon.
14. 14 . The method of claim 12 , wherein the aldehyde is represented by the formula C n H 2n+1 OH, where n is between 1 and 18.
15. 15 . The method of claim 1 , wherein the dielectric material is a metal oxide, nitride, or carbide or a metalloid oxide, nitride, or carbide.
16. 16 . The method of claim 1 , further comprising selectively depositing the dielectric material on the metal surface.
17. 17 . The method of claim 16 , further comprising, after selectively depositing the dielectric material on the metal surface, removing the organic layer.
18. 18 . A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface, the method comprising: providing a substrate within a reaction chamber of a reactor; providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metal surface, relative to the metal surface, to form —OSiH functional groups on the non-metal surface; and providing a second reactant to the reaction chamber, wherein the first reactant comprises an amino silane, wherein the second reactant comprises one or more of (1) a C2-C18 alkene or alkyne of fluorine-substituted derivative thereof, (2) an organo-sulfur compound, (3) an alcohol, or (4) an aldehyde, and wherein the second reactant selectively reacts with the —OSiH functional groups, relative to the metal surface, to selectively form an organic layer on the non-metal surface, relative to the metal surface.
19. 19 . The method of claim 18 , further comprising selectively depositing the dielectric material on the metal surface.
20. 20 . A reactor system comprising: a controller configured to perform the method of claim 1 ; a source vessel comprising the first reactant and coupled to the reaction chamber; a source vessel comprising the second reactant and coupled to the reaction chamber; the reactor; and a vacuum source.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is a nonprovisional of, and claims priority to and the benefit of, U.S. Provisional Patent Application No. 63/716,123, filed Nov. 4, 2024 and entitled “METHOD AND SYSTEM FOR SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL ON METAL SURFACE,” which is hereby incorporated by reference herein. FIELD OF INVENTION The present disclosure generally relates to methods for depositing material on a substrate. More particularly, the disclosure relates to selectively depositing dielectric material on a metal surface utilizing a selectively formed passivation film. BACKGROUND OF THE DISCLOSURE Dielectric material films or layers are used for a wide variety of applications. For example, dielectric material films can be used to form insulating regions, diffusion barriers, surface passivation, and formation of various device components, such as gate structures, capacitors, and the like. To form the regions or features including dielectric material, dielectric material is typically deposited onto a surface of a substrate. The deposited film is then patterned using, for example, photolithography, and then the film is etched to remove some of the dielectric material to form desired features or areas including the remaining dielectric material. As device features continue to decrease in size, it becomes increasingly difficult to pattern and etch dielectric material films to form features or areas of patterned dielectric material of desired dimensions, particularly when it is desired to deposit dielectric material within a via or trench on a substrate surface. Additionally, lithography and etch steps can increase costs associated with device manufacturing and increase an amount of time required for device fabrication. Accordingly, improved methods are desired for selectively forming dielectric material on metal surfaces. SUMMARY OF THE DISCLOSURE This section introduces a selection of concepts in a simplified form, which may be described in further detail below. This summary is not intended to necessarily identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Various embodiments of the present disclosure provide methods and reactor systems for selectively depositing a dielectric material on a metal surface relative to a non-metal surface. As set forth in more detail below, the selective deposition can be obtained by selectively forming a blocking or passivation layer on the non-metal surface relative to the metal surface. The blocking or passivation layer can prevent or mitigate unwanted deposition of dielectric material on the non-metal surface. In accordance with various embodiments of the disclosure, a method of depositing a dielectric material on a metal surface relative to a non-metal surface includes providing a substrate within a reaction chamber of a reactor, providing a first reactant to the reaction chamber, and providing a second reactant to the reaction chamber. In accordance with examples of the disclosure, the first reactant selectively reacts with the non-metal surface, relative to the metal surface, to form —OSiH functional groups on the non-metal surface and the second reactant selectively reacts with the —OSiH functional groups, relative to the metal surface, to selectively form an organic layer on the non-metal surface, relative to the metal surface. The organic layer can serve as a passivation or blocking layer for subsequent deposition of dielectric material onto the metal surface. In accordance with further examples, the first reactant is or includes an amino silane. In some cases, the second reactant can include an alkene and/or or an alkyne terminal functional group. In some cases, the second reactant is represented by the formula CxHyFz, where X is a whole number between about 2 and about 24 or between about 2 and about 18 or between about 2 and about 12, y is a whole number between about 0 and about 36 or between about 1 and about 24 or between about 1 and about 12, and z is 0 or a whole number between about 0 and about 36 or between about 1 and about 24 or between about 1 and about 12. In some cases, the second reactant is or includes a thiol. In some cases, the second reactant is or includes a disulfide. In some cases, the second reactant is or includes an alcohol. In some cases, the second reactant is or includes an aldehyde. In some cases, the second reactant comprises one or more of (1) a C2-C18 alkene or alkyne or a fluorine-substituted derivative thereof, (2) a sulfur compound, (3) an alcohol, or (4) an aldehyde. The method can also include a step of selectively depositing the dielectric material on the metal surface. The method can further include, after selectively depositing the dielectric material on the metal surface, removing the organic layer. In accordance with further embodiments, a reactor system includes a controller, a source vessel c