US-20260130151-A1 - METHOD FOR MANUFACTURING BONDING STRUCTURE AND BONDING STRUCTURE MANUFACTURED USING THE SAME

Abstract

A method includes providing a first substrate structure including a first semiconductor substrate having first and second surfaces opposite to each other, and a first semiconductor device layer on the first surface, providing a second substrate structure including a second semiconductor substrate having third and fourth surfaces opposite to each other, and a second semiconductor device layer on the third surface, removing a portion of the second semiconductor device layer on a first edge region of the second semiconductor substrate, electrically connecting the first and second semiconductor device layers by bonding the first and second substrate structures such that the first surface faces the third surface, forming a gap-filling film that fills a portion of a gap between the first substrate structure and the first edge region, removing a portion of the first edge region and reducing the thickness of the second semiconductor substrate using a laser trimming process.

Inventors

• Dong-Chan Lim
• Seok Ho Kim
• Ho-Jin Lee
• Joo Hee Jang

Assignees

• SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date

20260507

Application Date

20250519

Priority Date

20241104

Claims (20)

1. 1 . A method for manufacturing a bonding structure, comprising: providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface; providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface; removing a portion of the second semiconductor device layer disposed on a first edge region of the second semiconductor substrate; bonding the first and second substrate structures such that the first surface faces the third surface; forming a gap-filling film that fills at least a portion of a gap between the first substrate structure and the first edge region; and performing a trimming process to remove at least a portion of the first edge region after the forming the gap-filling film.
2. 2 . The method of claim 1 , further comprising: removing a portion of the first semiconductor device layer disposed on a second edge region of the first semiconductor substrate, wherein the gap-filling film fills at least a portion of a gap between the first and second edge regions.
3. 3 . The method of claim 1 , wherein a coefficient of thermal expansion (CTE) of the gap-filling film is different from a CTE of the second semiconductor substrate.
4. 4 . The method of claim 3 , wherein the CTE of the gap-filling film is greater than the CTE of the second semiconductor substrate.
5. 5 . The method of claim 1 , wherein the removing the portion of the second semiconductor device layer includes at least one of an edge exclusion width (EEW) process, an edge bead removal (EBR) process, or a plasma-enhanced strip (PES) process.
6. 6 . The method of claim 1 , wherein the trimming process includes a laser trimming process.
7. 7 . The method of claim 1 , wherein the trimming process includes a mechanical trimming process.
8. 8 . The method of claim 1 , further comprising: performing a thinning process to reduce a thickness of the second semiconductor substrate after the performing the trimming process.
9. 9 . The method of claim 8 , further comprising: removing the gap-filling film after the performing the thinning process.
10. 10 . The method of claim 1 , wherein after the removing the portion of the second semiconductor device layer, an inner angle formed by a side surface of the second semiconductor device layer with respect to the third surface is an acute angle.
11. 11 . A method for manufacturing a bonding structure, comprising: providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface; providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface; removing a portion of the second semiconductor device layer disposed on a first edge region of the second semiconductor substrate; electrically connecting the first and second semiconductor device layers by bonding the first and second substrate structures such that the first surface faces the third surface; forming a gap-filling film that fills at least a portion of a gap between the first substrate structure and the first edge region; performing a laser trimming process to remove at least a portion of the first edge region after the forming the gap-filling film; and performing a thinning process to reduce a thickness of the second semiconductor substrate after performing the laser trimming process, wherein a coefficient of thermal expansion (CTE) of the gap-filling film is greater than a CTE of the second semiconductor substrate.
12. 12 . The method of claim 11 , further comprising: removing a portion of the first semiconductor device layer disposed on a second edge region of the first semiconductor substrate, wherein the gap-filling film fills at least a portion of the gap between the first and second edge regions.
13. 13 . The method of claim 11 , wherein the performing the laser trimming process comprises separating the first edge region from a central region of the second semiconductor substrate using a first laser light source, and separating the first edge region from the gap-filling film using a second laser light source different from the first laser light source.
14. 14 . The method of claim 11 , wherein the second semiconductor substrate includes monocrystalline silicon, and the gap-filling film includes polycrystalline silicon.
15. 15 . The method of claim 11 , further comprising: removing the gap-filling film after the performing the thinning process.
16. 16 . A method for manufacturing a bonding structure, comprising: providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface; removing a portion of the first semiconductor device layer disposed on a first edge region of the first semiconductor substrate; providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface; removing a portion of the second semiconductor device layer disposed on a second edge region of the second semiconductor substrate; electrically connecting the first and second semiconductor device layers by bonding the first and second substrate structures such that the first surface faces the third surface; forming a gap-filling film that fills at least a portion of a gap between the first and second edge regions; performing a trimming process to remove at least a portion of the second edge region after the forming the gap-filling film; and performing a thinning process to reduce a thickness of the second semiconductor substrate after the performing the trimming process.
17. 17 . The method of claim 16 , wherein the trimming process includes a laser trimming process.
18. 18 . The method of claim 16 , wherein the trimming process includes a mechanical trimming process.
19. 19 . The method of claim 16 , further comprising: removing the gap-filling film after the performing the thinning process.
20. 20 . The method of claim 16 , wherein the removing the portion of the first semiconductor device layer includes removing the portion of the first semiconductor device layer such that an inner angle formed by a side surface of the first semiconductor device layer with respect to the first surface is an acute angle; and the removing the portion of the second semiconductor device layer includes removing the portion of the second semiconductor device layer such that an inner angle formed by a side surface of the second semiconductor device layer with respect to the third surface is an acute angle.

Description

CROSS-REFERENCE TO RELATED APPLICATION This U.S. non-provisional application claims priority under 35 U.S.C. 119 to Korean Patent Application No. 10-2024-0154138 filed on Nov. 4, 2024, in the Korean Intellectual Property Office, the contents of which are herein incorporated by reference in their entirety. BACKGROUND Example embodiments relate to a method for manufacturing a bonding structure using a trimming process for wafer bevels, and a bonding structure manufactured using the method. Semiconductor chips (or semiconductor integrated circuits (ICs)) are fabricated on semiconductor substrates (e.g., wafers) using semiconductor manufacturing processes such as photolithography, etching, deposition, and ion implantation. As the thickness of semiconductor chips decreases, bevels, which may refer to inclined surfaces formed at the edges of semiconductor substrates, may cause stress at the edges of the semiconductor substrates, and may cause defects such as cracks and/or delamination. Accordingly, it is advantageous to trim the edges of semiconductor substrates including the bevels. SUMMARY Example embodiments are directed to a method for manufacturing a bonding structure with improved productivity. Example embodiments are also directed to a bonding structure with improved productivity. The technical problems of the present disclosure are not limited to those mentioned above, and other technical problems not explicitly described can be clearly understood by those skilled in the art from the description below. However, example embodiments are not restricted to those set forth herein. The above and other aspects of the example embodiments will become more apparent to one of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below. According to some example embodiments, a method for manufacturing a bonding structure includes providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface, providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface, removing a portion of the second semiconductor device layer disposed on a first edge region of the second semiconductor substrate, bonding the first and second substrate structures such that the first surface faces the third surface, forming a gap-filling film that fills at least a portion of a gap between the first substrate structure and the first edge region and performing a trimming process to remove at least a portion of the first edge region, after the forming the gap-filling film. According to some example embodiments, a method for manufacturing a bonding structure includes providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface, providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface, removing a portion of the second semiconductor device layer disposed on a first edge region of the second semiconductor substrate, electrically connecting the first and second semiconductor device layers by bonding the first and second substrate structures such that the first surface faces the third surface, forming a gap-filling film that fills at least a portion of a gap between the first substrate structure and the first edge region, performing a laser trimming process to remove at least a portion of the first edge region, after the forming the gap-filling film and performing a thinning process to reduce a thickness of the second semiconductor substrate, after performing the laser trimming process, wherein a coefficient of thermal expansion (CTE) of the gap-filling film is greater than a CTE of the second semiconductor substrate. According to some example embodiments, a method for manufacturing a bonding structure includes providing a first substrate structure including a first semiconductor substrate having a first surface and a second surface that are opposite to each other, and a first semiconductor device layer on the first surface, removing a portion of the first semiconductor device layer disposed on a first edge region of the first semiconductor substrate, providing a second substrate structure including a second semiconductor substrate having a third surface and a fourth surface that are opposite to each other, and a second semiconductor device layer on the third surface, removing a portion of the second semiconductor device layer disposed on a second edge reg