Search

US-20260130152-A1 - METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

US20260130152A1US 20260130152 A1US20260130152 A1US 20260130152A1US-20260130152-A1

Abstract

Embodiments provide a method of manufacturing a semiconductor device, including forming two grooves that extend from a first surface of a semiconductor wafer along a dicing region of the semiconductor wafer and are arranged side by side, the semiconductor wafer including the first surface and a second surface opposite to the first surface. The manufacturing method includes irradiating between the two grooves from the second surface of the semiconductor wafer with a first laser beam when viewed from above to form a modified portion in the semiconductor wafer along the dicing region. The manufacturing method includes cleaving the semiconductor wafer to segment the semiconductor wafer into a plurality of semiconductor chips.

Inventors

  • Ryoji Yamada

Assignees

  • KIOXIA CORPORATION

Dates

Publication Date
20260507
Application Date
20250825
Priority Date
20241101

Claims (18)

  1. 1 . A method of manufacturing a semiconductor device, comprising: forming two grooves that extend from a first surface of a semiconductor wafer along a dicing region of the semiconductor wafer and are arranged side by side, the semiconductor wafer including the first surface and a second surface opposite to the first surface; irradiating between the two grooves from the second surface of the semiconductor wafer with a first laser beam when viewed from above to form a modified portion in the semiconductor wafer along the dicing region; and cleaving the semiconductor wafer to segment the semiconductor wafer into a plurality of semiconductor chips.
  2. 2 . The method of manufacturing a semiconductor device of claim 1 , wherein the cleaving the semiconductor wafer includes cleaving the semiconductor wafer with the modified portion as a starting point.
  3. 3 . The method of manufacturing a semiconductor device of claim 1 , wherein the forming the two grooves includes forming a region in which compressive stress occurs and a crystal defect which correspond to each of the two grooves.
  4. 4 . The method of manufacturing a semiconductor device of claim 1 , further comprising: forming at least one more grooves from the first surface of the semiconductor wafer to form at least three or more grooves extending along the dicing region of the semiconductor wafer, wherein the irradiating between the two grooves with the first laser beam is irradiating a region between the grooves, which are located at both outer ends, out of the at least three or more grooves with the first laser beam.
  5. 5 . The method of manufacturing a semiconductor device of claim 1 , wherein a width of a portion formed between the two grooves is smaller than a width of each of the grooves.
  6. 6 . The method of manufacturing a semiconductor device of claim 1 , wherein a width of a portion formed between the two grooves is larger than a width of each of the grooves.
  7. 7 . The method of manufacturing a semiconductor device of claim 1 , wherein the semiconductor wafer includes a semiconductor substrate including the second surface, and a film including the first surface and a semiconductor element, and the two grooves penetrate the film from the first surface and are formed to a depth that reaches the semiconductor substrate.
  8. 8 . The method of manufacturing a semiconductor device of claim 1 , wherein the semiconductor wafer includes a semiconductor substrate including the second surface, and a film including the first surface and a semiconductor element, and the two grooves are formed from the first surface to a depth that does not reach the semiconductor substrate.
  9. 9 . The method of manufacturing a semiconductor device of claim 7 , wherein the film has a thickness of 5 μm or more and less than 10 μm.
  10. 10 . The method of manufacturing a semiconductor device of claim 1 , wherein the two grooves are formed by laser ablation using a second laser beam.
  11. 11 . The method of manufacturing a semiconductor device of claim 10 , wherein the first laser beam has a wavelength of 1000 nm to 1400 nm, and the second laser beam has a wavelength of 600 nm or less and a pulse width of 10 nm or less.
  12. 12 . The method of manufacturing a semiconductor device of claim 8 , wherein the film has a thickness of 5 μm or more and less than 10 μm.
  13. 13 . A semiconductor device comprising a first surface and a second surface opposite to the first surface, the semiconductor device further comprising: a semiconductor element that is provided at a center of the semiconductor device when viewed from a direction substantially perpendicular to the first surface; at least two grooves that, in at least a part of an outer peripheral end of the semiconductor device when viewed from the direction substantially perpendicular to the first surface, extend along the outer peripheral end; and a modified portion that is formed on a side surface of the semiconductor device.
  14. 14 . The semiconductor device of claim 13 , further comprising a region in which compressive stress occurs and a crystal defect that correspond to each of the at least two grooves.
  15. 15 . The semiconductor device of claim 13 , wherein the semiconductor device includes a semiconductor substrate including the second surface, and a film including the first surface and a semiconductor element, and the at least two grooves have a depth that does not reach the semiconductor substrate.
  16. 16 . The semiconductor device of claim 13 , wherein the semiconductor device includes a semiconductor substrate including the second surface, and a film including the first surface and a semiconductor element, and the at least two grooves have a depth that reaches the semiconductor substrate.
  17. 17 . The semiconductor device of claim 12 , wherein a width of a portion formed between the two grooves is smaller than a width of each of the grooves.
  18. 18 . The semiconductor device of claim 12 , wherein a width of a portion formed between the two grooves is larger than a width of each of the grooves.

Description

CROSS REFERENCE TO RELATED APPLICATIONS This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2024-193243, filed on Nov. 1, 2024 and the prior Japanese Patent Application No. 2025-082217, filed on May 15, 2025, the entire contents of which are incorporated herein by reference. FIELD Embodiments of the present invention relate to a method of manufacturing a semiconductor device and a semiconductor device. BACKGROUND In dicing using laser light, it is desirable for cracks to propagate appropriately from a modified portion (modified layer) in order to properly segment a wafer into a plurality of chips. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view illustrating an example of a configuration of a portion of a semiconductor wafer according to a first embodiment; FIG. 2 is a perspective view illustrating a semiconductor device according to the first embodiment; FIG. 3 is a plan view illustrating a stacked body; FIG. 4 is a cross sectional view illustrating an example of a memory cell having a three-dimensional structure; FIG. 5 is a cross sectional view illustrating an example of the memory cell having a three-dimensional structure; FIG. 6 is a plan view illustrating an example of the semiconductor device according to the first embodiment; FIG. 7 is a cross sectional view illustrating an example of a configuration of a chip region and a dicing region; FIG. 8A is a perspective view illustrating an example of a method of manufacturing the semiconductor device according to the first embodiment; FIG. 8B is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8A; FIG. 8C is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8B; FIG. 8D is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8C; FIG. 8E is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8D; FIG. 8F is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8E; FIG. 8G is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8F; FIG. 8H is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 8G; FIG. 9A is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device according to the first embodiment; FIG. 9B is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 9A; FIG. 9C is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 9B; FIG. 10A is a cross sectional view illustrating an example of a configuration of the semiconductor device according to the first embodiment; FIG. 10B is a cross sectional view illustrating an example of a configuration of the semiconductor device according to the first embodiment; FIG. 11A is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a comparative embodiment; FIG. 11B is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 11A; FIG. 12A is a perspective view illustrating an example of a method of manufacturing a semiconductor device according to a second embodiment; FIG. 12B is a perspective view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 12A; FIG. 13 is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a third embodiment; FIG. 14 is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a fourth embodiment; FIG. 15 is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a fifth embodiment; FIG. 16A is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a sixth embodiment; FIG. 16B is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 16A; FIG. 17A is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to a seventh embodiment; FIG. 17B is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device, following FIG. 17A; FIG. 18A is a cross sectional view illustrating an example of a method of manufacturing a semiconductor device according to an eighth embodiment; FIG. 18B is a cross sectional view illustrating an example of the method of manufacturing the semiconductor device,