US-20260130170-A1 - SUBSTRATE PROCESSING APPARATUS

Abstract

A substrate processing apparatus includes: a semiconductor substrate including a base layer, a first layer on the base layer, a second layer on the first layer, and alignment marks in the first layer and the second layer; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate. The alignment marks include first alignment keys in the first layer and second alignment keys in the second layer. In a plan view, the first alignment keys extend along a first horizontal direction, and the second alignment keys extend along a third horizontal direction,. The first alignment keys and the second alignment keys overlap along a vertical direction.

Inventors

• Dain SONG
• Hachul Shin
• Dongwook Kim
• Donghyeong Kim
• Iihwan Kim
• Jeonghun Kim
• EUNHEE JEANG

Assignees

• SAMSUNG ELECTRONICS CO.,LTD.

Dates

Publication Date

20260507

Application Date

20250603

Priority Date

20241101

Claims (20)

1. 1 . A substrate processing apparatus comprising: a semiconductor substrate comprising a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate, wherein the plurality of alignment marks comprises a plurality of first alignment keys in the first layer and a plurality of second alignment keys in the second layer, wherein, in a plan view, the plurality of first alignment keys extend along a first horizontal direction, and are apart from each other along a second horizontal direction perpendicular to the first horizontal direction, wherein, in the plan view, the plurality of second alignment keys extend along a third horizontal direction, and are apart from each other along a fourth horizontal direction perpendicular to the third horizontal direction, and wherein the plurality of first alignment keys and the plurality of second alignment keys overlap along a vertical direction.
2. 2 . The substrate processing apparatus of claim 1 , wherein the third horizontal direction is a same direction as the second horizontal direction.
3. 3 . The substrate processing apparatus of claim 2 , wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and to analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.
4. 4 . The substrate processing apparatus of claim 3 , wherein the fifth horizontal direction is inclined between 20° to 35°, or between 55° to 70° to the first horizontal direction, with respect to the second horizontal direction.
5. 5 . The substrate processing apparatus of claim 1 , wherein the third horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction, and wherein the third horizontal direction is a different direction from the first horizontal direction and the second horizontal direction.
6. 6 . The substrate processing apparatus of claim 5 , wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and to analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is same direction as one horizontal direction of the first through fourth horizontal directions.
7. 7 . The substrate processing apparatus of claim 1 , wherein each of the plurality of first alignment keys has a first width, wherein a pitch of the plurality of first alignment keys is a first distance, wherein each of the plurality of second alignment keys has a second width, wherein a pitch of the plurality of second alignment keys is a second distance, wherein the first width is identical to the second width, and wherein the first distance is identical to the second distance.
8. 8 . The substrate processing apparatus of claim 1 , wherein each of the plurality of first alignment keys has a first width, wherein a pitch of the plurality of first alignment keys is a first distance, wherein each of the plurality of second alignment keys has a second width, wherein a pitch of the plurality of second alignment keys is a second distance, wherein the first width is different from the second width, and wherein the first distance is different from the second distance.
9. 9 . The substrate processing apparatus of claim 1 , wherein each of the plurality of first alignment keys extends along the second horizontal direction, and comprises a plurality of first sub-segments apart from each other along the first horizontal direction.
10. 10 . A substrate processing apparatus comprising: a semiconductor substrate comprising a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate, wherein the plurality of alignment marks comprises a plurality of first alignment keys in the first layer and a plurality of second alignment keys, wherein each of the plurality of second alignment keys has a protrusion shape extending in a vertical direction, and wherein, in a plan view, the plurality of second alignment keys are arranged in a matrix shape in which a plurality of columns apart from each other along a first horizontal direction and a plurality of rows apart from each other along a second horizontal direction perpendicular to the first horizontal direction are arranged.
11. 11 . The substrate processing apparatus of claim 10 , wherein each of the plurality of first alignment keys has a protrusion shape extending in the vertical direction, and wherein, in the plan view, the plurality of first alignment keys are arranged in a matrix shape in which a plurality of columns apart from each other along the first horizontal direction and a plurality of rows apart from each other along the second horizontal direction perpendicular to the second horizontal direction are arranged.
12. 12 . The substrate processing apparatus of claim 11 , wherein a first group of the plurality of first alignment keys and a second group of the plurality of first alignment keys are alternately arranged, and wherein each of the plurality of second alignment keys overlaps a corresponding first alignment key of the plurality of first alignment keys comprised in the first group along the vertical direction.
13. 13 . The substrate processing apparatus of claim 11 , wherein each of the plurality of second alignment keys is in a separation space between each of the plurality of first alignment keys, and is offset from each of the plurality of first alignment keys along the vertical direction.
14. 14 . The substrate processing apparatus of claim 13 , wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.
15. 15 . The substrate processing apparatus of claim 10 , wherein, in the plan view, the plurality of first alignment keys extend along the first horizontal direction, and are apart from each other along the second horizontal direction, and wherein second alignment keys arranged on an identical column among the plurality of columns of the plurality of second alignment keys are arranged on corresponding first alignment keys among the plurality of first alignment keys.
16. 16 . The substrate processing apparatus of claim 15 , wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.
17. 17 . A substrate processing apparatus comprising: an extreme ultra-violet (EUV) light source; a mask stage; a first optical device configured to allow EUV light from the EUV light source to be incident on an EUV mask on the mask stage; a semiconductor substrate comprising a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; a wafer stage configured to support the semiconductor substrate; a second optical device configured to allow the EUV light reflected by the EUV mask to be incident on the semiconductor substrate; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate, wherein each of the plurality of alignment marks comprises a plurality of first alignment keys in the first layer and a plurality of second alignment keys, and wherein the plurality of first alignment keys and the plurality of second alignment keys overlap along a vertical direction.
18. 18 . The substrate processing apparatus of claim 17 , wherein, in a plan view, the plurality of first alignment keys extend along a first horizontal direction, and are apart from each other along a second horizontal direction perpendicular to the first horizontal direction, wherein, in the plan view, the plurality of second alignment keys extend along the second horizontal direction, and are apart from each other along the first horizontal direction, wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.
19. 19 . The substrate processing apparatus of claim 17 , wherein each of the plurality of first alignment keys and each of the plurality of second alignment keys have a protrusion shape extending in the vertical direction, wherein, in a plan view, each of the plurality of first alignment keys and each of the plurality of second alignment keys are arranged in a matrix shape in which a plurality of columns apart from each other along a first horizontal direction and a plurality of rows apart from each other along a second horizontal direction vertical to the first horizontal direction are included, wherein a first group of the plurality of first alignment keys and a second group of the plurality of first alignment keys are alternately arranged, wherein each of the plurality of second alignment keys overlaps the plurality of first alignment keys comprised in the first group along the vertical direction, wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.
20. 20 . The substrate processing apparatus of claim 17 , wherein, in a plan view, the plurality of first alignment keys extend along a first horizontal direction, and are apart from each other along a second horizontal direction perpendicular to the first horizontal direction, wherein each of the plurality of second alignment keys has a protrusion shape extending in the vertical direction, wherein, in the plan view, the plurality of second alignment keys are arranged in a matrix shape in which a plurality of columns apart from each other along the first horizontal direction and a plurality of rows apart from each other along the second horizontal direction, wherein the measuring apparatus is configured to move on an upper portion of each of the plurality of alignment marks in a fifth horizontal direction, and analyze the plurality of first alignment keys and the plurality of second alignment keys of each of the plurality of alignment marks, and wherein the fifth horizontal direction is inclined toward the first horizontal direction with respect to the second horizontal direction.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on and claims priority to Korean Patent Application No. 10-2024-0153788, filed on Nov. 1, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety. BACKGROUND The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus which processes a substrate including an alignment mark. In response to the rapid development of the electronics industry and the needs of users, electronic devices are further miniaturized and multi-functionalized, and have a large capacity, and accordingly, highly integrated semiconductor chips are required. Accordingly, research is continuing in an effort to reduce overlay errors of semiconductor chips in line with the demand for high integration. SUMMARY One or more example embodiments provide a substrate processing apparatus having a small overlay error due to an increase in the measurement speed and the number of measurement samples of the alignment mark. However, issues to be solved by example embodiments are not limited to the above-mentioned issues, and other issues not mentioned may be clearly understood by those of ordinary skill in the art from the following descriptions. According to an aspect of an example embodiment a substrate processing apparatus includes: a semiconductor substrate including a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate. The plurality of alignment marks include a plurality of first alignment keys in the first layer and a plurality of second alignment keys in the second layer. In a plan view, the plurality of first alignment keys extend along a first horizontal direction, and are apart from each other along a second horizontal direction perpendicular to the first horizontal direction. In the plan view, the plurality of second alignment keys extend along a third horizontal direction, and are apart from each other along a fourth horizontal direction perpendicular to the third horizontal direction. The plurality of first alignment keys and the plurality of second alignment keys overlap along a vertical direction. According to another aspect of an example embodiment a substrate processing apparatus includes: a semiconductor substrate including a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate. The plurality of alignment marks include a plurality of first alignment keys in the first layer and a plurality of second alignment keys. Each of the plurality of second alignment keys has a protrusion shape extending in a vertical direction. In a plan view, the plurality of second alignment keys are arranged in a matrix shape in which a plurality of columns apart from each other along a first horizontal direction and a plurality of rows apart from each other along a second horizontal direction perpendicular to the first horizontal direction are arranged. According to another aspect of an example embodiment a substrate processing apparatus includes: an extreme ultra-violet (EUV) light source; a mask stage; a first optical device configured to allow EUV light from the EUV light source to be incident on an EUV mask on the mask stage; a semiconductor substrate including a base layer, a first layer on the base layer, a second layer on the first layer, and a plurality of alignment marks in the first layer and the second layer; a wafer stage configured to support the semiconductor substrate; a second optical device configured to allow the EUV light reflected by the EUV mask to be incident on the semiconductor substrate; and a measuring apparatus configured to analyze the plurality of alignment marks of the semiconductor substrate. Each of the plurality of alignment marks includes a plurality of first alignment keys in the first layer and a plurality of second alignment keys. The plurality of first alignment keys and the plurality of second alignment keys overlap along a vertical direction. BRIEF DESCRIPTION OF DRAWINGS The above and other objects, features and advantages will be more apparent from the following description of example embodiments, taken in conjunction with the accompanying drawings, in which: FIG. 1 is a schematic conceptual diagram of a substrate processing apparatus according to some example embodiments; FIG. 2 is a detailed block diagram of a control device in the substrate processing apparatus of FIG. 1 according to some example embodiments; FIG. 3 is a schematic plan view of a semiconductor substrate according to some example e