US-20260130214-A1 - POWER MODULE

US20260130214A1US 20260130214 A1US20260130214 A1US 20260130214A1US-20260130214-A1

Abstract

A power module includes a heat dissipation substrate, a carrier, a connection substrate, a power transistor chip group, a plurality of conductive members, a plurality of external connection leads, and a package. The carrier is disposed on the heat dissipation substrate and includes an insulation plate and a patterned metal circuit layer. The connection substrate is disposed on the patterned metal circuit layer and includes a multilayered metallic connection structure. The power transistor chip group is disposed on the connection substrate and includes a plurality of power transistor chips electrically connected to one another through the multilayered metallic connection structure. The conductive members are electrically connected to the patterned metal circuit layer of the carrier. The external connection leads are disposed on the patterned metal circuit layer. The package packages the heat dissipation substrate, the carrier, the connection substrate, the power transistor chip group, and the external connection leads.

Inventors

Hsin-Chang Tsai
Ching-Wen Liu

Assignees

ACTRON TECHNOLOGY CORPORATION

Dates

Publication Date: 20260507
Application Date: 20250106
Priority Date: 20241101

Claims (13)

1 . A power module, comprising: a heat dissipation substrate, having a top surface and a bottom surface; a carrier, disposed on the top surface of the heat dissipation substrate and comprising an insulation plate and a patterned metal circuit layer, wherein the insulation plate has a top surface; the patterned metal circuit layer is disposed on the top surface of the insulation plate; at least one connection substrate, disposed on the patterned metal circuit layer of the insulation plate and comprising a built-in package and a multilayered metallic connection structure, wherein the multilayered metallic connection structure is embedded in the built-in package; at least one power transistor chip group, comprising a plurality of power transistor chips, wherein the at least one power transistor chip group is disposed on the at least one connection substrate; the plurality of power transistor chips are electrically connected to one another through the multilayered metallic connection structure; a plurality of conductive members, electrically connected to the patterned metal circuit layer of the carrier and the at least one power transistor chip group; a plurality of external connection leads, disposed on the patterned metal circuit layer of the carrier, wherein the plurality of external connection leads are electrically connected to the at least one power transistor chip group; and a package, packaging the heat dissipation substrate, the carrier, the at least one connection substrate, the at least one power transistor chip group, and the plurality of external connection leads, wherein the package has a bottom opening; at least a part of the bottom surface of the heat dissipation substrate is exposed in the bottom opening.
2 . The power module as claimed in claim 1 , wherein the carrier comprises a bottom metallic layer; the insulation plate has a bottom surface; the bottom metallic layer is disposed on the bottom surface of the insulation plate; the bottom metallic layer and the patterned metal circuit layer are electrically isolated from each other; the bottom metallic layer is connected to the top surface of the heat dissipation substrate.
3 . The power module as claimed in claim 1 , wherein each of the plurality of power transistor chips of the at least one power transistor chip group is electrically connected to the patterned metal circuit layer of the carrier through the multilayered metallic connection structure.
4 . The power module as claimed in claim 3 , wherein the multilayered metallic connection structure of the at least one connection substrate comprises a metallic support layer; the metallic support layer is located on a bottom of the built-in package; the metallic support layer is connected to the patterned metal circuit layer of the carrier and is electrically connected to at least one of the plurality of external connection leads through the patterned metal circuit layer.
5 . The power module as claimed in claim 1 , wherein the patterned metal circuit layer of the carrier comprises a plurality of conductive portions; one of the plurality of conductive portions is a high-side conductive portion, and another one of the plurality of conductive portions is a low-side conductive portion; both an area of the high-side conductive portion and an area of the low-side conductive portion are greater than an area of the others of the plurality of conductive portions; the at least one connection substrate comprises a high-side connection substrate and a low-side connection substrate; the high-side connection substrate is disposed on the high-side conductive portion; the low-side connection substrate is disposed on the low-side conductive portion; the at least one power transistor chip group comprises a high-side power transistor chip group and a low-side power transistor chip group; the high-side power transistor chip group is disposed on the high-side connection substrate; the low-side power transistor chip group is disposed on the low-side connection substrate.
6 . The power module as claimed in claim 5 , wherein both the multilayered metallic connection structure of the high-side connection substrate and the multilayered metallic connection structure of the low-side connection substrate comprise a metallic support layer; the metallic support layer of the high-side connection substrate is located on a bottom of the built-in package of the high-side connection substrate, and the metallic support layer of the low-side connection substrate is located on a bottom of the built-in package of the low-side connection substrate; the high-side power transistor chip group is electrically connected to the high-side conductive portion through the metallic support layer of the high-side connection substrate; the low-side power transistor chip group is electrically connected to the low-side conductive portion through the metallic support layer of the low-side connection substrate.
7 . The power module as claimed in claim 6 , wherein the plurality of conductive portions comprise a power conductive portion; the plurality of external connection leads comprise a power lead, a ground lead, and an output lead; an inner end of the power lead is disposed on the power conductive portion; an inner end of the ground lead is disposed on the low-side conductive portion; an inner end of the output lead is disposed on the high-side conductive portion.
8 . The power module as claimed in claim 7 , wherein the plurality of conductive members comprise at least one first conductive member and at least one second conductive member; the power conductive portion is connected to a power connection electrode of each of the plurality of power transistor chips of the high-side power transistor chip group through the at least one first conductive member; the high-side conductive portion is connected to a power connection electrode of each of the plurality of power transistor chips of the low-side power transistor chip group through the at least one second conductive member.
9 . The power module as claimed in claim 8 , wherein the power conductive portion is located on a side of the high-side conductive portion and a side of the low-side conductive portion; an extension direction of the at least one first conductive member is perpendicular to an extension direction of the at least one second conductive member.
10 . The power module as claimed in claim 8 , wherein the at least one first conductive member is at least one first metallic bridge member; the at least one second conductive member is at least one second metallic bridge member.
11 . The power module as claimed in claim 8 , wherein both the multilayered metallic connection structure of the high-side connection substrate and the multilayered metallic connection structure of the low-side connection substrate include a first top pad, a plurality of second top pads, and an internal circuit; the first top pad and the plurality of second top pads of the high-side connection substrate are located on a top of the built-in package of the high-side connection substrate; the first top pad and the plurality of second top pads of the low-side connection substrate are located on a top of the built-in package of the low-side connection substrate; the internal circuit of the high-side connection substrate is located in an inner portion of the built-in package of the high-side connection substrate and is connected to the first top pad and the plurality of second top pads of the high-side connection substrate; the internal circuit of the low-side connection substrate is located in an inner portion of the built-in package of the low-side connection substrate and is connected to the first top pad and the plurality of second top pads of the low-side connection substrate; the plurality of second top pads of the high-side connection substrate are respectively connected to a control electrode of the plurality of power transistor chips of the high-side power transistor chip group; the plurality of second top pads of the low-side connection substrate are respectively connected to a control electrode of the plurality of power transistor chips of the low-side power transistor chip group; the plurality of conductive portions comprise a high-side control conductive portion and a low-side control conductive portion; the plurality of external connection leads comprise a high-side control lead and a low-side control lead; an inner end of the high-side control lead is disposed on the high-side control conductive portion; an inner end of the low-side control lead is disposed on the low-side control conductive portion; the plurality of conductive members comprise a plurality of third conductive members; the high-side control conductive portion is connected to the first top pad of the high-side connection substrate through at least one of the plurality of third conductive members; the low-side control conductive portion is connected to the first top pad of the low-side connection substrate through at least one of the plurality of third conductive members.
12 . The power module as claimed in claim 11 , wherein the high-side control lead is a conductive post; the low-side control lead is a conductive post; the high-side control lead is vertically disposed on the high-side control conductive portion; the low-side control lead is vertically disposed on the low-side control conductive portion; the inner end of the high-side control lead is connected to the high-side control conductive portion; the inner end of the low-side control lead is connected to the low-side control conductive portion; both an outer end of the high-side control lead and an outer end of the low-side control lead extend out of the package.
13 . The power module as claimed in claim 1 , wherein the built-in package of the at least one connection substrate is a polymer.

Description

BACKGROUND OF THE INVENTION Technical Field The present invention relates generally to a packaging structure of a power transistor, and more particularly to a power module with a connection substrate. Description of Related Art A conventional power module includes a carrier, a plurality of power transistor chips, a lead frame, and a package. The carrier has a patterned metal circuit layer. The power transistor chips are disposed on the patterned metal circuit layer. The power transistor chips are electrically connected to one another by wire bonding and are electrically connected to one another through the patterned metal circuit layer. The lead frame is disposed on the patterned metal circuit layer and is electrically connected to the power transistor chips. The package packages the carrier, the power transistor chips, and the lead frame. As the power transistor chips are electrically connected to one another by wire bonding, a distance has to be maintained between two adjacent power transistor chips for accommodating a bent wire. When the distance is too short, the wire is excessively bent and hence bonding could not be properly performed. A space for accommodating the wire is reserved. Therefore, if the number of power transistor chips is increased to improve the power density of the power module, a carrier with a larger area is required to carry more power transistor chips, which increases a size of the power module. Moreover, an increase of the number of wires causes difficulty in bonding, and the complexity of the patterned metal circuit layer affects the heat dissipation efficiency. Therefore, the conventional power module still has room for improvement. BRIEF SUMMARY OF THE INVENTION In view of the above, the primary objective of the present invention is to provide a power module, which could reduce a number of conductive members used and reduce a complexity of a patterned metal circuit layer. The present invention provides a power module, including a heat dissipation substrate, a carrier, at least one connection substrate, at least one power transistor chip group, a plurality of conductive members, a plurality of external connection leads, and a package. The heat dissipation substrate has a top surface and a bottom surface. The carrier is disposed on the top surface of the heat dissipation substrate. The carrier includes an insulation plate and a patterned metal circuit layer. The insulation plate has a top surface. The patterned metal circuit layer is disposed on the top surface of the insulation plate. The at least one connection substrate is disposed on the patterned metal circuit layer of the insulation plate. The at least one connection substrate includes a built-in package and a multilayered metallic connection structure. The multilayered metallic connection structure is embedded in the built-in package. The at least one power transistor chip group includes a plurality of power transistor chips. The at least one power transistor chip group is disposed on the at least one connection substrate. The plurality of power transistor chips are electrically connected to one another through the multilayered metallic connection structure. The plurality of conductive members are electrically connected to the patterned metal circuit layer of the carrier and the at least one power transistor chip group. The plurality of external connection leads are disposed on the patterned metal circuit layer of the carrier. The plurality of external connection leads are electrically connected to the at least one power transistor chip group. The package packages the heat dissipation substrate, the carrier, the at least one connection substrate, the at least one power transistor chip group, and the plurality of external connection leads. The package has a bottom opening. At least a part of the bottom surface of the heat dissipation substrate is exposed in the bottom opening. With the aforementioned design, the power transistor chips of the at least one power transistor chip group are electrically connected to one another through the multilayered metallic connection structure of the at least one connection substrate, so that the number of the conductive members for connecting the power transistor chips could be reduced and hence more power transistor chips could be disposed. Moreover, the complexity of the patterned metal circuit layer of the carrier could be reduced, thereby improving the heat dissipation efficiency. BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS The present invention will be best understood by referring to the following detailed description of some illustrative embodiments in conjunction with the accompanying drawings, in which FIG. 1 is a perspective view of the power module according to a first embodiment of the present invention; FIG. 2 is a perspective view of the power module according to the first embodiment of the present invention seen from another perspective; FIG. 3 is a perspective vie