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US-20260130220-A1 - POP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

US20260130220A1US 20260130220 A1US20260130220 A1US 20260130220A1US-20260130220-A1

Abstract

Example embodiments are directed to a package-on-package (PoP) package structure and a method of manufacturing the same. The PoP package structure includes a substrate, a first package on the substrate, a second package on the first package, a first thermal conductive layer between the first package and the second package, a second thermal conductive layer on the second package, and a thermal interface material layer between the first package and the substrate. The first thermal conductive layer passes through a via penetrating the first package to contact the thermal interface material layer, and the second thermal conductive layer passes through a via penetrating the second package to contact the first thermal conductive layer.

Inventors

  • Minyan Wu
  • Yonghua Zhou

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260507
Application Date
20241122
Priority Date
20241107

Claims (18)

  1. 1 . A package-on-package (PoP) package structure, comprising: a substrate; a first package on the substrate, and including a first base substrate, a first chip on the first base substrate, and a first mold layer on the first base substrate and at least partially encapsulating the first chip; a second package on the first package, and including a second base substrate, a second chip on the second base substrate, and a second mold layer on the second base substrate and at least partially encapsulating the second chip; a first thermal conductive layer between an upper surface of the first package and a lower surface of the second package; and a thermal interface material layer between a lower surface of the first package and an upper surface of the substrate, wherein the first thermal conductive layer contacts the thermal interface material layer through a via defined in the first package.
  2. 2 . The PoP package structure of claim 1 , wherein the first thermal conductive layer comprises a thermal conductive insulating material.
  3. 3 . The PoP package structure of claim 1 , further comprising: a second thermal conductive layer on an upper surface of the second package, wherein the second thermal conductive layer contacts the first thermal conductive layer through a via penetrating the second package.
  4. 4 . The PoP package structure of claim 3 , wherein the second thermal conductive layer comprises a thermal conductive insulating material.
  5. 5 . The PoP package structure of claim 4 , wherein the first thermal conductive layer and the second thermal conductive layer comprise materials that are same as each other.
  6. 6 . The PoP package structure of claim 4 , wherein the first thermal conductive layer and the second thermal conductive layer comprise materials that are different from each other.
  7. 7 . The PoP package structure of claim 3 , wherein an upper surface of the second thermal conductive layer is at a same level as the upper surface of the second package.
  8. 8 . The PoP package structure of claim 1 , wherein the thermal interface material layer comprises a thermal conductive matrix and a phase change composite material dispersed in the thermal conductive matrix.
  9. 9 . The PoP package structure of claim 8 , wherein the thermal conductive matrix has an insulating property.
  10. 10 . The PoP package structure of claim 8 , wherein the phase change composite material comprises a phase change material and a wrapping material wrapping the phase change material.
  11. 11 . A method of manufacturing a package-on-package (PoP) package structure, comprising: providing a first package including a first base substrate, a first chip on the first base substrate, and a first mold layer on the first base substrate and at least partially encapsulating the first chip; performing a drilling process on the first package to form a first via penetrating the first package; coating a high thermal conductive insulating material on an upper surface of the first package to form a first thermal conductive layer; coating a phase change composite material on an upper surface of a substrate; bonding the first package formed with a first thermal conductive layer on the upper surface thereof and the substrate coated with the phase change composite material on the upper surface thereof with each other; providing a second package including a second base substrate, a second chip on the second base substrate, and a second mold layer on the second base substrate and at least partially encapsulating the second chip; bonding the second package and the first package bonded to the substrate with each other; and filing a thermal conductive matrix in a space between the substrate and the first package, to form a thermal interface material layer, wherein the first thermal conductive layer is in contact with the thermal interface material layer through the first via.
  12. 12 . The method of claim 11 , further comprising: after forming the first thermal conductive layer, performing an etching process on the upper surface of the first thermal conductive layer to form a first recess.
  13. 13 . The method of claim 11 , further comprising: performing an etching process on an upper surface of the second package to form a second recess; performing a drilling process on the second package to form a second via penetrating the second package; and coating a thermal conductive insulating material on the upper surface of the second package to form a second thermal conductive layer, wherein the second thermal conductive layer fills the second recess and the second via, and contacts the first thermal conductive layer through the second via.
  14. 14 . The method of claim 13 , wherein the first thermal conductive layer and the second thermal conductive layer comprise thermal conductive insulating materials that are same as each other.
  15. 15 . The method of claim 13 , wherein the first thermal conductive layer and the second thermal conductive layer comprise thermal conductive insulating materials that are different from each other.
  16. 16 . The method of claim 13 , wherein an upper surface of the second thermal conductive layer is at a same level as the upper surface of the second package.
  17. 17 . The method of claim 11 , wherein the thermal conductive matrix has an insulating property.
  18. 18 . The method of claim 11 , wherein the phase change composite material comprises a phase change material and a wrapping material wrapping the phase change material.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority under 35 U.S.C. § 119 to Chinese Patent Application No. 202411586038.1, filed on Nov. 7, 2024, the disclosure of which is incorporated herein by reference in its entirety. BACKGROUND Example embodiments are directed to a semiconductor package and a method of manufacturing the same. Due to rapid development of the electronic industry and user demands, electronic devices are becoming smaller and lighter, and thus, highly integrated semiconductor chips as core components of the electronic devices become useful. In addition, as mobile products are widely used, small-sized multi-functional electronic devices become popular. Therefore, a package-on-package (PoP) package structure in which an upper package having a different function from a lower package is stacked on the lower package has been proposed. SUMMARY Example embodiments are directed to improving heat dissipation of the package-on-package (PoP) package structures. Example embodiments are directed to a PoP package structure that improves the heat dissipation performance through a combination of a heat dissipation member disposed between a SOC package and a memory package, a heat dissipation member disposed between the SOC package and a PCB plate as well as a heat dissipation member disposed on a surface of the memory package. In addition, some example embodiments are directed to a method of manufacturing the PoP package structure. According to some example embodiments of the present disclosure, a PoP package structure may include a substrate, a first package on the substrate, and including a first base substrate, a first chip on the first base substrate, and a first mold layer on the first base substrate and encapsulating or at least partially encapsulating the first chip, a second package on the first package, and including a second base substrate, a second chip on the second base substrate, and a second mold layer on the second base substrate and encapsulating or at least partially encapsulating the second chip, a first thermal conductive layer between an upper surface of the first package and a lower surface of the second package, and a thermal interface material layer between a lower surface of the first package and an upper surface of the substrate. The first thermal conductive layer contacts the thermal interface material layer through a via defined in the first package. According to some example embodiments, the first thermal conductive layer may include a thermal conductive insulating material. According to some example embodiments, the POP package structure may further include a second thermal conductive layer on an upper surface of the second package. The second thermal conductive layer contacts the first thermal conductive layer through a via penetrating the second package. According to some example embodiments, the second thermal conductive layer may include a thermal conductive insulating material. According to some example embodiments, the first thermal conductive layer and the second thermal conductive layer may include materials that are same as each other. According to some example embodiments, the first thermal conductive layer and the second thermal conductive layer may include materials that are different from each other. According to some example embodiments, an upper surface of the second thermal conductive layer is at a same level as the upper surface of the second package. According to some example embodiments, the thermal interface material layer may include a thermal conductive matrix and a phase change composite material dispersed in the thermal conductive matrix. According to some example embodiments, the thermal conductive matrix may have an insulating property. According to some example embodiments, the phase change composite material may include a phase change material and a wrapping material wrapping the phase change material. According to some example embodiments, a method of manufacturing a PoP package structure may include providing a first package including a first base substrate, a first chip on the first base substrate, and a first mold layer on the first base substrate and encapsulating or at least partially encapsulating the first chip, performing a drilling process on the first package to form a first via penetrating the first package, coating a high thermal conductive insulating material on an upper surface of the first package to form a first thermal conductive layer, coating a phase change composite material on an upper surface of a substrate, bonding the first package formed with a first thermal conductive layer on the upper surface thereof and the substrate coated with the phase change composite material on the upper surface thereof with each other, providing a second package including a second base substrate, a second chip on the second base substrate, and a second mold layer on the second base substrate and encapsulating or at least par