US-20260130253-A1 - ELECTRONIC DEVICE

US20260130253A1US 20260130253 A1US20260130253 A1US 20260130253A1US-20260130253-A1

Abstract

An electronic device including a first aluminum nitride film configured to cover a first surface of the first glass substrate, a second aluminum nitride film configured to cover a second surface of the first glass substrate, wiring layers disposed on the first aluminum nitride film, a plurality of first terminals disposed on the wiring layers, a first electronic component mounted on the plurality of first terminals, a plurality of second terminals disposed on the second aluminum nitride film, a second electronic component mounted on the plurality of second terminals, and a first through-hole wiring penetrating the first aluminum nitride film, the second aluminum nitride film, and the first glass substrate are included. A first reference potential terminal among the plurality of first terminals and a second reference potential terminal among the plurality of second terminals are electrically connected to each other via the first through-hole wiring.

Inventors

Masanobu Ikeda
Yoshitaka Ozeki

Assignees

JAPAN DISPLAY INC.

Dates

Publication Date: 20260507
Application Date: 20251230
Priority Date: 20230705

Claims (13)

1 . An electronic device comprising: a first glass substrate having a first surface and a second surface opposite to the first surface; a first aluminum nitride film covering the first surface of the first glass substrate; a second aluminum nitride film covering the second surface of the first glass substrate; one or more wiring layers disposed on the first aluminum nitride film; a plurality of first terminals disposed on the one or more wiring layers; a first electronic component mounted on the plurality of first terminals; a plurality of second terminals disposed on the second aluminum nitride film; a second electronic component mounted on the plurality of second terminals; and a first through-hole wiring embedded in a through-hole that penetrates the first aluminum nitride film, the second aluminum nitride film, and the first glass substrate, wherein the plurality of first terminals includes, a first reference potential terminal capable of supplying a reference potential to the first electronic component, and a first power supply potential terminal capable of supplying a first power supply potential to the first electronic component, wherein the plurality of second terminals includes a second reference potential terminal capable of supplying the reference potential to the second electronic component, wherein a first power supply potential supply path connected to the first power supply potential terminal and a first reference potential supply path connected to the first reference potential terminal are disposed so as to be adjacent to each other in any of the one or more wiring layers, and wherein each of the first reference potential terminal and the second reference potential terminal is electrically connected via the first through-hole wiring.
2 . The electronic device according to claim 1 , wherein the one or more wiring layers include a first wiring layer disposed on the first aluminum nitride film, and wherein the first wiring layer includes a first reference potential pattern connected to the first through-hole wiring, and a first power supply potential pattern electrically connected to the first power supply potential terminal, and wherein, in the first wiring layer, a first side surface of the first reference potential pattern and a second side surface of the first power supply potential pattern face each other.
3 . The electronic device according to claim 2 , wherein each of the first reference potential pattern and the first power supply potential pattern of the first wiring layer is covered with a first organic insulating film; and wherein a relative dielectric constant of the first organic insulating film is lower than a relative dielectric constant of the first aluminum nitride film.
4 . The electronic device according to claim 3 , wherein at least a part of each of the first reference potential pattern and the first power supply potential pattern is disposed in any of a plurality of first recesses provided in the first aluminum nitride film, and wherein a portion of the first aluminum nitride film is interposed between the first side surface of the first reference potential pattern and the second side surface of the first power supply potential pattern.
5 . The electronic device according to claim 3 , wherein a first inorganic insulating layer is interposed between a layer in which the plurality of first terminals is disposed and the first organic insulating film.
6 . The electronic device according to claim 2 , wherein each of the plurality of first terminals, the first wiring layer, and the first through-hole wiring is made of copper or a copper alloy.
7 . The electronic device according to claim 2 , wherein the plurality of second terminals is in contact with the second aluminum nitride film, and wherein a thickness of the second aluminum nitride film is greater than a thickness of the first aluminum nitride film.
8 . The electronic device according to claim 7 , wherein a plurality of second conductor patterns including the plurality of second terminals is disposed on the second aluminum nitride film, wherein each of the plurality of second conductor patterns is in contact with the second aluminum nitride film, wherein the plurality of second conductor patterns includes a second power supply potential terminal included in the plurality of second terminals and configured to supply a second power supply potential to the second electronic component, a second reference potential pattern connected to the first through-hole wiring, and a second power supply potential pattern connected to the second power supply potential terminal, and wherein in a layer in which the second terminals are formed, a third side surface of the second reference potential pattern and a fourth side surface of the second power supply potential pattern face each other.
9 . The electronic device according to claim 8 , wherein at least a part of each of the second reference potential pattern and the second power supply potential pattern is disposed in any of a plurality of second recesses provided in the second aluminum nitride film, and wherein a portion of the second aluminum nitride film is interposed between the third side surface of the second reference potential pattern and the fourth side surface of the second power supply potential pattern.
10 . The electronic device according to claim 2 , wherein a first metal film is interposed between the first surface of the first glass substrate and the first aluminum nitride film, and wherein the first metal film covers the first surface and is connected to the first through-hole wiring.
11 . The electronic device according to claim 2 , wherein a second metal film is interposed between the second surface of the first glass substrate and the second aluminum nitride film, and wherein the second metal film covers the second surface and is connected to the first through-hole wiring.
12 . The electronic device according to claim 6 , wherein a second inorganic insulating layer, which is an inorganic oxide film containing silicon or a metal oxide film containing aluminum, is interposed between the first wiring layer and the first aluminum nitride film, and wherein the second inorganic insulating layer is in contact with the first wiring layer.
13 . The electronic device according to claim 2 , wherein each of the first wiring layer, the plurality of second terminals, and the first through-hole wiring is made of copper or a copper alloy, wherein a third inorganic insulating layer, which is an inorganic oxide film containing silicon or a metal oxide film containing aluminum, is interposed between the plurality of second terminals and the second aluminum nitride film, and wherein the third inorganic insulating layer is in contact with the plurality of second terminals.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS The present application is a continuation of International Application No. PCT/JP2024/016585 filed on Apr. 26, 2024 and claims priority to Japanese Patent Application No. 2023-110635 filed on Jul. 5, 2023, the disclosure of each is incorporated herein by reference. BACKGROUND The present disclosure relates to an electronic device. Japanese Patent Application Laid-open Publication No. 05-243416 discloses a semiconductor package using an aluminum-nitride multilayer substrate as a wiring substrate on which a semiconductor element is mounted. In addition, Japanese Patent Application Laid-open Publication No. 09-050936 discloses a built-in thin-film-capacitor module in which a thin-film capacitor is mounted on an aluminum-nitride substrate. SUMMARY There is a technique of building a system in a package by mounting a plurality of electronic components having different functions from one another on a single package substrate. In addition, there is a technique in which a semiconductor wafer is used as a package substrate on which a plurality of electronic components are mounted, and in which multilayer wiring layers provided in the package substrate are formed by a wafer process. An electronic component manufactured by this technique is called an Fan-Out Wafer Level Package (FOWLP). The inventors of the present application are studying a technique of using a glass substrate as a package substrate on which a plurality of electronic components are mounted. The object of the present disclosure is to provide a technique for improving the performance of an electronic device having a glass substrate. According to one embodiment, an electronic device includes a first glass substrate having a first surface and a second surface opposite to the first surface, a first aluminum nitride film covering the first surface of the first glass substrate, a second aluminum nitride film covering the second surface of the first glass substrate, one or more wiring layers disposed on the first aluminum nitride film, a plurality of first terminals disposed on the one or more wiring layers, a first electronic component mounted on the plurality of first terminals, a plurality of second terminals disposed on the second aluminum nitride film, a second electronic component mounted on the plurality of second terminals, and a first through-hole wiring embedded in a through-hole that penetrates the first aluminum nitride film, the second aluminum nitride film, and the first glass substrate. The plurality of first terminals includes a first reference potential terminal capable of supplying a reference potential to the first electronic component. The plurality of second terminals includes a second reference potential terminal capable of supplying the reference potential to the second electronic component. Each of the first reference potential terminal and the second reference potential terminal is electrically connected via the first through-hole wiring. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view illustrating a configuration example of an electronic device according to one embodiment. FIG. 2 is an enlarged cross-sectional view illustrating a part of the electronic device illustrated in FIG. 1. FIG. 3 is an enlarged cross-sectional view illustrating a portion A of FIG. 2. FIG. 4 is an enlarged cross-sectional view illustrating a modification example with respect to FIG. 2. FIG. 5 is an enlarged cross-sectional view illustrating a portion B of FIG. 4. FIG. 6 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. FIG. 7 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. FIG. 8 is an enlarged cross-sectional view illustrating each of a portion C of FIG. 2 and a portion D of FIG. 7. FIG. 9 is an enlarged cross-sectional view illustrating a modification example with respect to FIG. 7. FIG. 10 is an enlarged cross-sectional view illustrating a portion E of FIG. 9. FIG. 11 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. FIG. 12 is an enlarged cross-sectional view illustrating a portion F of FIG. 11. FIG. 13 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. FIG. 14 is an enlarged cross-sectional view illustrating a portion G of FIG. 13. FIG. 15 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. FIG. 16 is an enlarged cross-sectional view illustrating another modification example with respect to FIG. 2. DETAILED DESCRIPTION The embodiments of the present disclosure will be described below with reference to the drawings. It should be noted that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the disclosure are naturally included within the sco