WO-2026029801-A3 - NUCLEATION LAYER DESIGN FOR THE GROWTH OF INDIUM-CONTAINING GROUP III-NITRIDE-BASED LONG WAVELENGTH EMITTERS
WO2026029801A3WO 2026029801 A3WO2026029801 A3WO 2026029801A3WO-2026029801-A3
Abstract
Group III-nitride heterostructures that include an In-containing group III-nitride alloy with a high crystal quality for use as buffer layers in light-emitting devices are provided. Also provided are light-emitting devices, such as light-emitting diodes and laser diodes, that incorporate the heterostructures and metal-organic chemical vapor deposition (MOCVD) methods for growing the heterostructures. The heterostructures include a substrate, a thin nucleation layer of an In-containing group III-nitride, a thin cap layer on the nucleation layer, and an In-containing group III-nitride alloy overlayer on the cap layer.
Inventors
- WANG, Guangying
- PASAYAT, Shubhra S.
- GUPTA, CHIRAG
- Sanyal, Surjava
- XIE, Shuwen
Assignees
- WISCONSIN ALUMNI RESEARCH FOUNDATION
Dates
- Publication Date
- 20260507
- Application Date
- 20250211
- Priority Date
- 20240405