WO-2026091128-A1 - SPIN SYNAPTIC DEVICE AND IN-MEMORY COMPUTING APPARATUS

WO2026091128A1WO 2026091128 A1WO2026091128 A1WO 2026091128A1WO-2026091128-A1

Abstract

Provided in the embodiments of the present application are a spin synaptic device and an in-memory computing apparatus. The spin synaptic device comprises: a substrate; and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer, which are formed on the substrate from bottom to top, wherein the magnetic storage layer is connected to a conductive structure layer, and the magnetic storage layer is connected to a peripheral circuit by means of the top electrode layer and the conductive structure layer; there is a two-dimensional electron gas region at an interface of the complex oxide system layer; and when the magnetic storage layer receives a read/write voltage of the peripheral circuit, the magnetic storage layer is used for generating a spin current, and the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, such that the magnetic storage layer completes data reading or writing. Therefore, the effect of improving the read reliability of the device is achieved.

Inventors

XING, Guozhong
LIN, HUAI
WANG, Di
LIU, Long
ZHANG, YIFAN
LUO, Qing
LI, LING

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260507
Application Date: 20241104
Priority Date: 20241031

Claims (10)

A spin synaptic device, characterized in that it comprises: A substrate; and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed sequentially from bottom to top on the substrate, wherein the magnetic storage layer is connected to a conductive structure layer and the magnetic storage layer is connected to an external circuit through the top electrode layer and the conductive structure layer. In this process, there is a two-dimensional electron gas region at the interface of the complex oxide system layer. When the magnetic storage layer receives the read/write voltage from the peripheral circuit, the magnetic storage layer generates a spin current. The spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, thereby enabling the magnetic storage layer to complete the reading or writing of data.
The spin synaptic device as claimed in claim 1, wherein the magnetic storage layer comprises a heavy metal layer and a magnetic layer formed sequentially from bottom to top on the complex oxide system layer, the heavy metal layer extending in opposite first and second directions beyond the boundaries of the magnetic layer in the first and second directions.
The spin synapse device as claimed in claim 2, wherein the conductive structure layer comprises a first conductive layer and a second conductive layer, the first conductive layer being connected to the portion of the heavy metal layer extending beyond the complex oxide system layer in a first direction, and the second conductive layer being connected to the portion of the heavy metal layer extending beyond the complex oxide system layer in the first direction.
The spin synaptic device as described in claim 3 is characterized in that the magnetic storage layer is used to generate spin currents with different polarization directions to enable data writing; the spin currents generated by the magnetic storage layer enter the magnetic layer and are injected into the complex oxide system layer to change the two-dimensional electron gas density so as to enable data reading.
The spin synapse device as described in claim 4 is characterized in that, during the read or write process of the spin synapse device, a write voltage is applied to the bottom electrode layer, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, and a charge flow is injected into the heavy metal layer, which is converted into a spin current through the spin-orbit coupling effect. The spin current is injected into the complex oxide system layer at the same time as entering the magnetic layer, thereby changing the two-dimensional electron gas density.
The spin synapse device as described in claim 5 is characterized in that the magnetic layer is a magnetic tunnel junction, wherein, during the writing process of the magnetic storage layer, the top auxiliary voltage realizes the external field-free spin orbital flip of the ferromagnetic material in the magnetic layer through the spin-transfer torque of the spin current, and injects the spin current into the two-dimensional electron gas region, thereby changing the conductivity between the bottom electrode layer and the first conductive layer.
The spin synapse device as claimed in claim 5 is characterized in that, during the reading process of the magnetic storage layer, the bottom electrode layer is grounded, the top auxiliary voltage is applied, the spin current is injected into the two-dimensional electron gas region, the two-dimensional electron gas density is changed, and the resistance between the bottom electrode layer and the first conductive layer is read, the resistance being used to indicate the read information.
The spin synaptic device according to any one of claims 1 to 7, wherein the complex oxide system layer comprises one or more complex oxides.
An in-memory computing device, characterized in that it uses a spin synaptic device as described in any one of claims 1-8 to perform binary or multi-valued in-memory computing.
The in-memory computing device according to claim 9 is characterized in that, During the in-memory computing weight modulation process, the spin orbital moment current of the magnetic storage layer drives the magnetic domains to move, and the proportion of the spin direction of the magnetic storage layer changes, thus linearly setting different weights. During the in-memory computing process, the proportion of different spin directions is between the maximum and minimum charge, exhibiting different conductance values. When a reading voltage is applied, in-memory multiplication and addition operations are realized.

Description

Spin synaptic devices and in-memory computing devices Technical Field This application relates to the field of synapse technology, and more particularly to a spin synapse device and an in-memory computing device. Background Technology The development of artificial intelligence has led to a rapid increase in the demand for computing power, while the development of traditional von Neumann architecture has struggled to keep pace with this rapid growth. Spintronic devices have become an emerging research direction in recent years due to their high speed, high energy efficiency, and long-term retention and durability. However, spintronic devices are limited by their relatively small switching ratio, resulting in complex external circuit designs and hindering improvements in read reliability. Summary of the Invention This application provides a spin synaptic device and an in-memory computing device to improve the high and low resistance magnetoresistance ratio of the spintronic device and enhance the reliability of device readout. In a first aspect, embodiments of this application provide a spin synapse device, comprising: A substrate; and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed from bottom to top on the substrate, wherein the magnetic storage layer is connected to a conductive structure layer and the magnetic storage layer is connected to an external circuit through the top electrode layer and the conductive structure layer. In this process, there is a two-dimensional electron gas region at the interface of the complex oxide system layer. When the magnetic storage layer receives the read/write voltage from the peripheral circuit, the magnetic storage layer generates a spin current. The spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, thereby enabling the magnetic storage layer to complete the reading or writing of data. In one possible implementation, the magnetic storage layer comprises a heavy metal layer and a magnetic layer formed from bottom to top on the complex oxide system layer, the heavy metal layer extending in opposite first and second directions beyond the boundaries of the magnetic layer in the first and second directions. In one possible implementation, the conductive structure layer includes a first conductive layer and a second conductive layer. The first conductive layer is connected to the portion of the heavy metal layer that extends beyond the complex oxide system layer in a first direction, and the second conductive layer is connected to the portion of the heavy metal layer that extends beyond the complex oxide system layer in a first direction. In one possible implementation, the magnetic storage layer is used to generate spin currents with different polarization directions to enable data writing; the generated spin currents are then injected into the magnetic layer, which in turn injects them into a complex oxide system layer, altering the two-dimensional electron gas density to enable data reading. In one possible implementation, during the read or write process of the spin synapse device, a write voltage is applied to the bottom electrode, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, and the charge flow is injected into the heavy metal layer, which is converted into a spin current through the spin-orbit coupling effect. The spin current is injected into the complex oxide system while entering the magnetic layer, changing the two-dimensional electron gas density. In one possible implementation, the magnetic layer is a magnetic tunnel junction, wherein during the writing process of the magnetic storage layer, the top auxiliary voltage achieves the external field-free spin orbital flipping of the ferromagnetic material in the magnetic layer through spin-transfer torque, and injects spin current into the two-dimensional electron gas region, thereby changing the conductivity between the bottom electrode and the first conductive layer. In one possible implementation, during the reading of the magnetic storage layer, the bottom electrode is grounded, a top auxiliary voltage is applied to the top electrode layer, a spin current is injected into the two-dimensional electron gas region to change the two-dimensional electron gas density, and the resistance between the bottom electrode and the first conductive layer of the bottom electrode is read, the resistance being used to indicate the read information. In one possible implementation, the complex oxide system layer comprises one or more complex oxides. Secondly, embodiments of this application provide an in-memory computing device, wherein the aforementioned spin synaptic device serves as a synaptic device in binary or multi-valued in-memory computing. In one possible implement