WO-2026092232-A1 - TEMPERATURE CONTROL METHOD FOR WAFER BEARING APPARATUS, AND SEMICONDUCTOR PROCESS DEVICE

WO2026092232A1WO 2026092232 A1WO2026092232 A1WO 2026092232A1WO-2026092232-A1

Abstract

Provided in the present application are a temperature control method for a wafer bearing apparatus, and a semiconductor process device. The method comprises: when a process chamber executes a process task, acquiring a first temperature of a wafer bearing apparatus; if the first temperature meets a preset fluctuation condition, controlling the process chamber to execute the process task according to a temperature control mode; and in the temperature control mode, on the basis of a second temperature, a heating temperature and a preset temperature threshold value, controlling a heating apparatus, so as to keep the temperature of the wafer bearing apparatus stable. In the control method, during the process of the process chamber executing the process task, when the first temperature of the wafer bearing apparatus meets the preset fluctuation condition, the heating apparatus is controlled by means of the temperature control mode, such that the temperature of the wafer bearing apparatus is kept stable, thereby avoiding the phenomenon of wafer temperature accumulation caused by temperature fluctuations of the wafer bearing apparatus, mitigating the problem of an excessively large temperature difference of a wafer during the process, and improving the uniformity of a deposited thin film.

Inventors

LI, SHUANG

Assignees

北京北方华创微电子装备有限公司

Dates

Publication Date: 20260507
Application Date: 20251021
Priority Date: 20241030

Claims (16)

A method for temperature control of a wafer carrier, wherein a process chamber includes a heating device and the wafer carrier, the heating device heating the wafer via the wafer carrier; characterized in that the method includes: When the process chamber performs a process task, the first temperature of the wafer carrier is obtained; If the first temperature meets the preset fluctuation conditions, the process chamber is controlled to perform the process task according to the temperature control mode; In the temperature control mode, the second temperature of the wafer carrier and the heating temperature of the heating device are obtained, and the heating device is controlled according to the second temperature, the heating temperature and a preset temperature threshold to keep the temperature of the wafer carrier stable; wherein, the preset temperature threshold is determined according to the process allowable temperature corresponding to the process task.
According to the method of claim 1, the preset temperature threshold includes: the upper limit of the bearing temperature corresponding to the wafer carrier device; The step of controlling the heating device based on the second temperature, the heating temperature, and the preset temperature threshold includes: Determine whether the second temperature is less than the upper limit of the bearing temperature; If not, control the heating device to be in a non-heating state.
According to the method of claim 2, the preset temperature threshold further includes: a lower limit value of the heating temperature corresponding to the heating device; The step of controlling the heating device based on the second temperature, the heating temperature, and the preset temperature threshold includes: When the second temperature is less than the upper limit of the bearing temperature, it is determined whether the heating temperature is greater than the lower limit of the heating temperature; If not, control the heating device to be in heating mode.
The method according to claim 3, characterized in that the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: When the heating temperature is greater than the lower limit of the heating temperature, it is determined whether the process chamber is in an idle state; If not, calculate the temperature difference between the second temperature and the heating temperature, and when the temperature difference is greater than a preset error, control the heating device to be in a heating state; or, when the temperature difference is not greater than the preset error, control the heating device to be in a non-heating state.
According to the method of claim 4, the preset temperature threshold further includes: a lower limit value of the bearing temperature corresponding to the wafer bearing device; The step of controlling the heating device based on the second temperature, the heating temperature, and the preset temperature threshold includes: When the process chamber is in the idle state, it is determined whether the second temperature is greater than the lower limit of the bearing temperature; If not, control the heating device to be in heating mode.
According to the method of claim 5, the preset temperature threshold further includes: an upper limit value of the heating temperature corresponding to the heating device; The step of controlling the heating device based on the second temperature, the heating temperature, and the preset temperature threshold includes: When the second temperature is greater than the lower limit of the bearing temperature, it is determined whether the heating temperature is greater than the upper limit of the heating temperature. If so, control the heating device to be in a non-heating state.
The method according to claim 6, characterized in that the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: If the heating temperature is not greater than the upper limit of the heating temperature, the heating device is controlled to be in the heating state.
According to claim 1, the method further includes, before the step of satisfying the preset fluctuation condition for the first temperature: Obtain multiple first temperatures within a specified duration including the current time; If the first difference between any two adjacent first temperatures is less than a first preset difference threshold, then the first temperature at the current moment is determined to meet the preset fluctuation condition.
According to claim 8, the method further includes, before the step of satisfying the preset fluctuation condition for the first temperature: Obtain the first temperature at the current moment, and calculate the second difference between the first temperature at the current moment and the first temperature at the previous moment; If the second difference is less than the second preset difference threshold, then the first temperature at the current moment is determined to meet the preset fluctuation condition.
The method according to claim 1, characterized in that, prior to the step of performing the process task in the process chamber, the method further includes: A third temperature of the wafer carrier is obtained. If the third temperature meets a preset temperature range, the wafer is controlled to enter the process chamber so that the process chamber performs the process task to process the wafer. The preset temperature range is determined according to the allowable process temperature.
The method according to claim 10, characterized in that the method further comprises: If the third temperature does not meet the preset temperature range, the third temperature is reacquired after a preset interval, and it is determined whether the reacquired third temperature meets the preset temperature range; and the number of determinations is obtained. When the number of determinations reaches a preset number, if the third temperature still does not meet the preset temperature range, an alarm message is generated to remind the operator that the process chamber does not meet the conditions for executing the process task.
The method according to claim 1, characterized in that the method further comprises: When the shutdown operation of the temperature control mode is detected, the process chamber is controlled to exit the temperature control mode.
The method according to claim 1, characterized in that the method further comprises: When the process chamber completes the process task, the process chamber is controlled to exit the temperature control mode.
The method according to claim 12 or 13, characterized in that the method further comprises: When the process chamber exits the temperature control mode, the fourth temperature of the wafer carrier device at this time is obtained; The heating device is controlled to be in a heating state until the fourth temperature reaches the process allowable temperature.
A semiconductor process apparatus, characterized in that it includes a process chamber and a controller; wherein the process chamber includes a heating device and a wafer carrier device, the wafer carrier device being used to carry a wafer, and the heating device heating the wafer via the wafer carrier device; The controller includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the steps of the method described in any one of claims 1-14.
A computer-readable storage medium, characterized in that a computer program is stored on the computer-readable storage medium, and the computer program, when executed by a processor, performs the steps of the method described in any one of claims 1-14.

Description

Temperature control method for wafer carrier and semiconductor process equipment Technical Field This application relates to the field of semiconductor technology, and in particular to temperature control methods for wafer carrier devices and semiconductor process equipment. Background Technology In the integrated circuit chip manufacturing industry, wafer fabrication is crucial, typically involving core processes such as photolithography, etching, ion implantation, and metal deposition. Among these, magnetron sputtering (PVD) is the primary method used in metal thin film deposition. Specifically, magnetron sputtering involves adding a magnet to the back of the target and using a sputtering source to create an interactive electromagnetic field within the chamber. This extends the electron path, increasing plasma concentration and ultimately resulting in more deposited material. PVD offers higher plasma concentrations, enabling excellent deposition efficiency, greater film thickness, and more precise compositional control. However, since film uniformity is significantly affected by temperature, temperature fluctuations can lead to inconsistent film densities between deposited wafers. Therefore, maintaining temperature stability for each wafer during the deposition process is crucial for wafer quality. However, temperature accumulation is a common problem during wafer deposition. Temperature accumulation occurs because the temperature of the wafer carrier cannot dissipate, causing the temperature of a wafer to deteriorate and become unstable within an ideal range during the process. This results in excessive temperature differences within the wafer, reducing the uniformity of the deposited film. Therefore, mitigating temperature accumulation on wafers is a pressing issue that needs to be addressed. Summary of the Invention In view of this, the purpose of this application is to provide a temperature control method for a wafer carrier device and semiconductor process equipment to alleviate the above-mentioned technical problems. In a first aspect, embodiments of this application provide a temperature control method for a wafer carrier device. A process chamber includes a heating device and a wafer carrier device, with the heating device heating the wafer via the wafer carrier device. The method includes: when the process chamber performs a process task, acquiring a first temperature of the wafer carrier device; if the first temperature meets a preset fluctuation condition, controlling the process chamber to perform the process task according to a temperature control mode; in the temperature control mode, acquiring a second temperature of the wafer carrier device and the heating temperature of the heating device, and controlling the heating device based on the second temperature, the heating temperature, and a preset temperature threshold to keep the temperature of the wafer carrier device stable; wherein the preset temperature threshold is determined based on the process-allowed temperature corresponding to the process task. In some embodiments, the preset temperature threshold includes: an upper limit value of the bearing temperature corresponding to the wafer carrier device; the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: determining whether the second temperature is less than the upper limit value of the bearing temperature; if not, controlling the heating device to be in a non-heating state. In some embodiments, the preset temperature threshold further includes: a lower limit value of the heating temperature corresponding to the heating device; the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: when the second temperature is less than the upper limit value of the bearing temperature, determining whether the heating temperature is greater than the lower limit value of the heating temperature; if not, controlling the heating device to be in a heating state. In some embodiments, the step of controlling the heating device based on the second temperature, the heating temperature, and the preset temperature threshold includes: when the heating temperature is greater than the lower limit of the heating temperature, determining whether the process chamber is in an idle state; if not, calculating the temperature difference between the second temperature and the heating temperature, and when the temperature difference is greater than a preset error, controlling the heating device to be in a heating state; or, when the temperature difference is not greater than the preset error, controlling the heating device to be in a non-heating state. In some embodiments, the preset temperature threshold further includes: a lower limit value of the bearing temperature corresponding to the wafer carrier device; the step of controlli