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WO-2026093850-A1 - THIN-FILM TRANSISTORS WITH METAL OXIDE CHANNEL INTERFACES

WO2026093850A1WO 2026093850 A1WO2026093850 A1WO 2026093850A1WO-2026093850-A1

Abstract

An example thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.

Inventors

  • CADIEN, KEN
  • FLECK, Joel
  • KIM, Kwanghyun

Assignees

  • ZINITE CORPORATION

Dates

Publication Date
20260507
Application Date
20251020
Priority Date
20241031

Claims (20)

  1. 1. Athin-film transistor comprising: a source; a drain; a gate; and a body of channel material disposed within the influence of the gate between the source and the drain, the body of channel material including a metal oxide, the body of channel material to form a carrier channel between the source and the drain when sufficient voltage is applied to the gate; wherein the source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.
  2. 2. The thin-film transistor of claim 1, wherein the oxide-stabilizing metal is selected from the group consisting of chromium, cobalt, and molybdenum.
  3. 3. The thin-film transistor of claim 1, wherein the oxide-stabilizing metal is chromium.
  4. 4. The thin-film transistor of claim 1, further comprising a source-channel interface at the body of source material adjacent the body of channel material, wherein the source-channel interface includes ruthenium oxide and the oxide of the oxide-stabilizing metal.
  5. 5. The thin-film transistor of claim 1, wherein the body of source material consists essentially of ruthenium and the oxide-stabilizing metal.
  6. 6. The thin-film transistor of claim 1, wherein the body of source material contains a majority of ruthenium with a minority of the oxide-stabilizing metal.
  7. 7. The thin-film transistor of claim 1, wherein the body of source material is ruthenium with about 15 atomic % oxide-stabilizing metal or less.
  8. 8. The thin-film transistor of claim 1, wherein the body of source material is ruthenium with about 10 atomic % oxide-stabilizing metal or less. ZINIP003WO/135-WO
  9. 9. The thin-film transistor of claim 1, wherein the body of source material is ruthenium with about 5 atomic % oxide-stabilizing metal or less.
  10. 10. The thin-film transistor of claim 1, wherein the drain includes a body of drain material that includes ruthenium and the oxide-stabilizing metal.
  11. 11. The thin-film transistor of claim 10, further comprising a drain-channel interface at the body of drain material adjacent the body of channel material, wherein the drain-channel interface includes ruthenium oxide and the oxide of the oxide-stabilizing metal.
  12. 12. A method of manufacturing a thin-film transistor comprising: forming a body of source material; forming a body of drain material; forming a body of channel material; and forming a body of gate material; wherein the body of channel material is formed within the influence of the body of gate material between the bodies of source and drain material, wherein the body of channel material includes a metal oxide; wherein the body of source material includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.
  13. 13. The method of claim 12, wherein the oxide-stabilizing metal is selected from the group consisting of chromium, cobalt, and molybdenum.
  14. 14. The method of claim 12, wherein the oxide-stabilizing metal is chromium.
  15. 15. The method of claim 12, further comprising forming a source-channel interface at the body of source material, wherein the source-channel interface includes ruthenium oxide and the oxide of the oxide-stabilizing metal.
  16. 16. The method of claim 15, wherein forming the source-channel interface comprises applying oxygen plasma to the body of source material. ZINIP003WO/135-WO
  17. 17. The method of claim 12, wherein the body of source material is formed to consist essentially of ruthenium and the oxide-stabilizing metal.
  18. 18. The method of claim 12, wherein the body of source material is formed to contain a majority of ruthenium with a minority of the oxide-stabilizing metal.
  19. 19. The method of claim 12, wherein the body of source material is formed of ruthenium with about 15 atomic % oxide-stabilizing metal or less.
  20. 20. The method of claim 12, wherein the body of source material is formed of ruthenium with about 10 atomic % oxide-stabilizing metal or less.

Description

ZINIP003WO/135-WO Thin-Film Transistors with Metal Oxide Channel Interfaces Cross-Reference to Related Applications [0001] This application claims the benefit of and priority to US provisional patent app. ser. no. 63/714,396, filed Oct. 31, 2024, which is incorporated herein by reference. Field [0002] The present disclosure relates to thin-film transistors and related methods. Background [0003] Thin-film transistors (TFTs) are widely used in display devices and are increasingly used in other applications. A conventional TFT is composed of thin films of materials formed in sequence to create a stack-like arrangement. Such thin films are normally of nanometerscale thickness. [0004] The manufacture and operation of TFTs are heavily dependent on the materials and processes used. In order to expand the useful applications TFTs, it is helpful to investigate new materials and develop new processes. Summary [0005] According to an aspect of the present disclosure, a thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide. [0006] The oxide-stabilizing metal may be selected from the group consisting of chromium, cobalt, and molybdenum. For example, the oxide-stabilizing metal may be chromium. [0007] The thin-film transistor may further include a source-channel interface at the body of source material adjacent the body of channel material. The source-channel interface may include ruthenium oxide and the oxide of the oxide-stabilizing metal. ZINIP003WO/135-WO [0008] The body of source material may consist essentially of ruthenium and the oxidestabilizing metal. [0009] The body of source material may contain a majority of ruthenium with a minority of the oxide-stabilizing metal. [0010] The body of source material may be ruthenium with about 15 atomic % oxide- stabilizing metal or less. [0011] The body of source material may be ruthenium with about 10 atomic % oxide- stabilizing metal or less. [0012] The body of source material may be ruthenium with about 5 atomic % oxide- stabilizing metal or less. [0013] The drain may include a body of drain material that includes ruthenium and the oxide- stabilizing metal. [0014] The thin-film transistor may further include a drain-channel interface at the body of drain material adjacent the body of channel material. The drain-channel interface may include ruthenium oxide and the oxide of the oxide-stabilizing metal. [0015] According to an aspect of the present disclosure, a method of manufacturing a thin- film transistor includes forming a body of source material, forming a body of drain material, forming a body of channel material, and forming a body of gate material. The body of channel material is formed within the influence of the body of gate material between the bodies of source and drain material. The body of channel material includes a metal oxide. The body of source material includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide. [0016] The oxide-stabilizing metal may be selected from the group consisting of chromium, cobalt, and molybdenum. For example, the oxide-stabilizing metal may be chromium. [0017] The method may further include forming a source-channel interface at the body of source material. The source-channel interface may include ruthenium oxide and the oxide of the oxide-stabilizing metal. ZINIP003WO/135-WO [0018] Forming the source-channel interface may include applying oxygen plasma to the body of source material. [0019] The body of source material may be formed to consist essentially of ruthenium and the oxide-stabilizing metal. [0020] The body of source material may be formed to contain a majority of ruthenium with a minority of the oxide-stabilizing metal. [0021] The body of source material may be formed of ruthenium with about 15 atomic % oxide-stabilizing metal or less. [0022] The body of source material may be formed of ruthenium with about 10 atomic % oxide-stabilizing metal or less. [0023] The body of source material may be formed of ruthenium with about 5 atomic % oxide-stabilizing metal or less. [0024] The body of drain material may include ruthenium and the oxide-stabilizing metal. [0025] The method may further include forming a drain-channel interface at the body of drain material. The drain-channel interface may include ruthenium oxide and the oxide of the oxide-stabilizing metal. [0026] Forming the drain-channel interface may include applying oxygen plasma to the body of drain material. [0027] The body of sourc