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WO-2026094424-A1 - SEMICONDUCTOR PACKAGE, SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE

WO2026094424A1WO 2026094424 A1WO2026094424 A1WO 2026094424A1WO-2026094424-A1

Abstract

The present invention improves image quality in a semiconductor package provided with a semiconductor chip for imaging.　This semiconductor package is provided with a transparent on-chip lens layer and a light-shielding resin layer. In the on-chip lens layer out of the on-chip lens layer and the light-shielding resin layer of the semiconductor package, a predetermined number of slits are formed in a peripheral region around a pixel region. Of the on-chip lens layer and the light-shielding resin layer of the semiconductor package, the light-shielding resin layer covers a peripheral region of the on-chip lens layer.

Inventors

  • TAKAYAMA, Ayumi

Assignees

  • ソニーセミコンダクタソリューションズ株式会社

Dates

Publication Date
20260507
Application Date
20250905
Priority Date
20241101

Claims (8)

  1. A transparent on-chip lens layer having a predetermined number of slits formed in the peripheral region surrounding a pixel area in which pixels are arranged, A semiconductor package comprising: a light-shielding resin layer covering the peripheral region of the on-chip lens layer.
  2. The semiconductor package according to claim 1, wherein the light-shielding resin layer covers the light-receiving surfaces of each of the multiple protrusions divided by the slit, and the sides and bottom surfaces of each of the slits.
  3. The semiconductor package according to claim 1, wherein the light-shielding resin layer is embedded in each of the slits.
  4. The thickness of the light-shielding resin layer is 1/5 of the depth of the slit. The semiconductor package according to claim 1, wherein the ratio of the width of the slit to the depth of the slit is not less than 1 and less than 2.
  5. Glass and, A support portion for supporting the glass, A substrate connected to a semiconductor chip by bonding wires, The present invention further comprises the glass and a molded resin that seals the side surface of the support portion, The semiconductor package according to claim 1, wherein the semiconductor chip includes the on-chip lens layer and the light-shielding resin layer.
  6. The semiconductor package according to claim 1, wherein microlenses are formed in the pixel region of the on-chip lens layer for each pixel.
  7. A transparent on-chip lens layer having a predetermined number of slits formed in the peripheral region surrounding a pixel area in which pixels are arranged, A semiconductor chip comprising a light-shielding resin layer covering the peripheral region of the on-chip lens layer.
  8. A procedure for forming a predetermined number of slits in the peripheral region of a transparent on-chip lens layer, including the pixel region and the peripheral region, A method for manufacturing a semiconductor package, comprising the steps of forming a light-shielding resin layer that covers the peripheral region of the on-chip lens layer.

Description

Semiconductor package, semiconductor chip, and method for manufacturing a semiconductor package This technology relates to semiconductor packages. More specifically, it relates to a semiconductor package for capturing image data, a semiconductor device, and a method for manufacturing a semiconductor package. Conventionally, various technologies have been developed to suppress flare in semiconductor packages equipped with semiconductor chips such as CIS (CMOS Image Sensors), with the aim of improving the image quality of image data captured by the chip. For example, a semiconductor package has been proposed in which a light-shielding resin layer is formed on top of a transparent on-chip lens layer in the peripheral region surrounding the effective pixel area of the CIS, and slits are provided in this light-shielding resin layer (see, for example, Patent Document 1). This is a block diagram showing an example configuration of a semiconductor device in the first embodiment of this technology.This is a cross-sectional view showing an example configuration of a semiconductor package in the first embodiment of this technology.This is a cross-sectional view of the boundary between the on-chip lens layer and the support portion in the first embodiment of this technology.This is a cross-sectional view showing an example configuration of a semiconductor package equipped with an OPB (optical black) pixel in the first embodiment of this technology.This is a cross-sectional view of the first embodiment of this technology when the ratio of the slit width to the slit depth is changed.This is a cross-sectional view showing an example configuration of a semiconductor package in the first and second comparative examples.This figure shows an example of the trajectory of reflected light reflected in the peripheral region in the second comparative example.This figure illustrates the manufacturing method up to the formation of the slit in the first embodiment of this technology.This figure illustrates the manufacturing method for forming an LTO (Low Temperature Oxide) film in the first embodiment of this technology.This is a flowchart showing an example of a semiconductor package manufacturing method according to the first embodiment of this technology.This is a cross-sectional view showing an example configuration of a semiconductor package in a second embodiment of this technology.This graph shows an example of the simulation results for the first and second embodiments of this technology and the first and second comparative examples, when the incident angle is 90 degrees.This graph shows an example of the simulation results for the first and second embodiments of this technology and the first and second comparative examples, when the incident angle is 45 degrees.This figure shows examples of simulation results for the first and second embodiments of this technology and comparative examples.This block diagram shows an example of a schematic configuration of a vehicle control system.This is an explanatory diagram showing an example of the installation location of the external information detection unit and the imaging unit. The following describes the embodiments for implementing this technology (hereinafter referred to as "embodiments"). The description will proceed in the following order. 1. First embodiment (an example in which slits are formed in the peripheral region and covered with a light-shielding resin layer) 2. Second embodiment (an example in which a slit is formed in the peripheral region and a light-shielding resin layer is embedded in the slit) 3. Examples of applications to mobile devices <1. First Embodiment> [Example of semiconductor device configuration] Figure 1 is a block diagram showing an example configuration of a semiconductor device 100 in a first embodiment of this technology. This semiconductor device 100 is a device for capturing image data and comprises an optical unit 110, a semiconductor package 200, and a DSP (Digital Signal Processing) circuit 120. Furthermore, the semiconductor device 100 comprises a display unit 130, an operation unit 140, a bus 150, a frame memory 160, a storage unit 170, and a power supply unit 180. Examples of semiconductor devices 100 include cameras mounted in smartphones and in-vehicle cameras. The optical unit 110 focuses incident light and guides it to the semiconductor package 200. The semiconductor package 200 contains a semiconductor chip such as a CIS and generates image data through photoelectric conversion. This semiconductor package 200 supplies the generated image data to the DSP circuit 120 via the signal line 209. The DSP circuit 120 performs predetermined signal processing on the image data. This DSP circuit 120 outputs the processed image data to a frame memory 160 or the like via the bus 150. The display unit 130 displays image data. For example, the display unit 130 could be a liquid crystal panel or an organic EL (Electro-Luminescence) panel. The operat