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WO-2026094711-A1 - SEMICONDUCTOR DEVICE

WO2026094711A1WO 2026094711 A1WO2026094711 A1WO 2026094711A1WO-2026094711-A1

Abstract

This semiconductor device comprises: a die pad having a mounting surface; a first metal layer covering a portion of the mounting surface; a semiconductor element bonded to the first metal layer; and a sealing resin covering a portion of the die pad and the semiconductor element. The mounting surface faces a first direction. The mounting surface includes a first region surrounding the first metal layer when viewed in the first direction. The sealing resin is in contact with the first region. The bonding force of the sealing resin to the first region is greater than the bonding force of the sealing resin to the first metal layer.

Inventors

  • KITAMURA MASATO

Assignees

  • ローム株式会社

Dates

Publication Date
20260507
Application Date
20251021
Priority Date
20241030

Claims (17)

  1. A die pad having a mounting surface facing one side in the first direction, A first metal layer covering a portion of the mounting surface, A semiconductor element bonded to the first metal layer, The device comprises a part of the die pad and a sealing resin covering the semiconductor element, The mounting surface includes a first region that surrounds the first metal layer when viewed in the first direction, The sealing resin is in contact with the first region, A semiconductor device wherein the bonding force of the sealing resin to the first region is greater than the bonding force of the sealing resin to the first metal layer.
  2. The first junction layer further comprises a first junction layer that joins the first metal layer and the semiconductor element. The semiconductor device according to claim 1, wherein the first bonding layer is separated from the first region.
  3. A first terminal that conducts to the aforementioned semiconductor element, The semiconductor element and the first terminal are further connected by a first conductive member, The semiconductor device according to claim 2, wherein the sealing resin covers a part of the first terminal and the first conductive member.
  4. Further comprising a second metal layer, The first terminal has a first connection surface that faces the same side as the mounting surface in the first direction, The second metal layer covers a portion of the first connecting surface, The semiconductor device according to claim 3, wherein the first conductive member is electrically bonded to the second metal layer.
  5. The first connecting surface includes a second region, The second region includes a portion located between the second metal layer and the first region when viewed in the first direction. The sealing resin is in contact with the second region, The semiconductor device according to claim 4, wherein the bonding force of the sealing resin to the second region is greater than the bonding force of the sealing resin to the second metal layer.
  6. The semiconductor device according to claim 5, wherein the metal element contained in the second metal layer is the same as the metal element contained in the first metal layer.
  7. The present invention further comprises a second bonding layer that electrically bonds the second metal layer and the first conductive member, The semiconductor device according to claim 5, wherein the second junction layer is separated from the second region.
  8. The first conductive member has a first surface and a second surface that face opposite each other in the first direction, The first surface is electrically bonded to the semiconductor element, The semiconductor device according to claim 7, wherein the surface roughness of the second surface is greater than the surface roughness of the first surface.
  9. The semiconductor device according to claim 5, wherein, viewed in the first direction, the second region surrounds the second metal layer.
  10. A second terminal that conducts to the aforementioned semiconductor element, The system further comprises a second conductive member that connects the semiconductor element and the second terminal, The semiconductor device according to any one of claims 5 to 9, wherein the sealing resin covers a part of the second terminal and the second conductive member.
  11. Further comprising a third metal layer, The second terminal has a second connection surface that faces the same side as the mounting surface in the first direction, The third metal layer covers a portion of the second connecting surface, The semiconductor device according to claim 10, wherein the second conductive member is electrically bonded to the third metal layer.
  12. The second connecting surface includes a third region that surrounds the third metal layer when viewed in the first direction. The sealing resin is in contact with the third region, The semiconductor device according to claim 11, wherein the bonding force of the sealing resin to the third region is greater than the bonding force of the sealing resin to the third metal layer.
  13. The semiconductor device according to claim 12, wherein the metal element contained in the third metal layer is the same as the metal element contained in the first metal layer.
  14. The semiconductor device has a first electrode facing the first metal layer, The semiconductor device according to any one of claims 5 to 9, wherein the first bonding layer conductively bonds the first metal layer and the first electrode.
  15. The die pad has a back surface that faces away from the mounting surface in the first direction, The semiconductor device according to claim 14, wherein the aforementioned back surface is exposed from the sealing resin.
  16. The semiconductor device according to claim 15, wherein the surface roughness of the first region is greater than the surface roughness of the back surface.
  17. A terminal having a connection surface facing one side in the first direction, A semiconductor element that conducts to the aforementioned terminal, A metal layer covering a portion of the aforementioned connection surface, A conductive member electrically bonded to the semiconductor element and the metal layer, The device comprises a sealing resin covering a part of the terminal, the semiconductor element, and the conductive member, The connecting surface includes a region surrounding the metal layer when viewed in the first direction, The sealing resin is in contact with the region, A semiconductor device wherein the bonding force of the sealing resin to the region is greater than the bonding force of the sealing resin to the metal layer.

Description

Semiconductor equipment This disclosure relates to semiconductor devices. Patent Document 1 discloses an example of a semiconductor device comprising a die pad, an internal plating layer covering the entire thickness of one side of the die pad, a semiconductor element bonded to the internal plating layer, and a sealing resin covering the semiconductor element. The internal plating layer contains silver. By including the internal plating layer, the semiconductor device can mitigate the impact acting on the die pad when mounting the semiconductor element onto the die pad. However, in the semiconductor device configuration disclosed in Patent Document 1, temperature cycling tests have confirmed that delamination is more likely to occur at the interface between the inner plating layer and the sealing resin than at the interface between the die pad and the sealing resin. If delamination at the interface between the inner plating layer and the sealing resin extends, there is a risk of crack formation in the bonding layer that joins the inner plating layer to the semiconductor element. Figure 1 is a perspective view of a semiconductor device according to the first embodiment of this disclosure.Figure 2 is a plan view of the semiconductor device shown in Figure 1, and the sealing resin is transparent.Figure 3 is a bottom view of the semiconductor device shown in Figure 1.Figure 4 is a right side view of the semiconductor device shown in Figure 1.Figure 5 is a rear view of the semiconductor device shown in Figure 1.Figure 6 is a cross-sectional view along the line VI-VI in Figure 2.Figure 7 is a cross-sectional view along the line VII-VII in Figure 2.Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 2.Figure 9 is a cross-sectional view along the line IX-IX in Figure 2.Figure 10 is a magnified view of a portion of Figure 6, showing the die pad and its vicinity.Figure 11 is a partially enlarged view of Figure 6, showing the first conductive member and its vicinity.Figure 12 is a plan view of a semiconductor device according to the second embodiment of the present disclosure, and shows a transparent encapsulating resin.Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 12.Figure 14 is a plan view of a semiconductor device according to the third embodiment of the present disclosure, and shows a sealant resin that is transparent.Figure 15 is a cross-sectional view along the line XV-XV in Figure 14. [Detailed explanation] Further details of this disclosure will be explained based on the attached drawings. First embodiment: A semiconductor device A10 according to the first embodiment of this disclosure will be described with reference to Figures 2 to 9. The semiconductor device A10 is used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 comprises a semiconductor element 10, a first junction layer 19, a die pad 20, a first terminal 21, a second terminal 22, a first conductive member 31, a second conductive member 32, a second junction layer 36, a third junction layer 37, a first metal layer 41, a second metal layer 42, a third metal layer 43, and a sealing resin 50. Here, for ease of understanding, Figure 2 shows the sealing resin 50 being transparent. In Figure 2, the transparent sealing resin 50 is shown by dashed lines. In the description of the semiconductor device A10, for convenience, the direction normal to the mounting surface 201 of the die pad 20 (described later) will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y." The semiconductor element 10 is mounted on the die pad 20, as shown in Figures 2 and 6-8. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be other switching elements such as an IGBT (Insulated Gate Bipolar Transistor). Furthermore, the semiconductor element 10 may be various diodes or various ICs. In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel type, vertically structured MOSFET. The semiconductor element 10 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). As shown in Figures 2 and 6-8, the semiconductor element 10 has a first electrode 11, a second electrode 12, and a control electrode 13. As shown in Figures 6 to 8, the first electrode 11 faces the first metal layer 41 in the first direction z. In the semiconductor device 10, current flows from the first electrode 11 towards the interior of the semiconductor device 10. That is, the first electrode 11 corresponds to the drain of the semiconductor device 10. As shown in Figures 6