WO-2026094804-A1 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

WO2026094804A1WO 2026094804 A1WO2026094804 A1WO 2026094804A1WO-2026094804-A1

Abstract

Provided are a substrate processing device and a substrate processing method which are for forming a nitride semiconductor layer on a substrate.　The substrate processing device comprises: a film deposition chamber that has a subatmospheric pressure atmosphere and accommodates a substrate support part for supporting a substrate; a first gas feeder that supplies a mixture gas including a nitrogen-containing starting-material gas; a remote plasma unit that receives supply of the mixture gas including a nitrogen-containing starting-material gas, generates a plasma of the mixture gas, forms hydrazine in the plasma, and supplies a nitrogen-containing gas including the hydrazine to the film deposition chamber; and a second gas feeder that supplies an organometal-containing gas to the film deposition chamber. The organometal-containing gas is reacted with the nitrogen-containing gas to form a nitride semiconductor layer on the substrate.

Inventors

TAKAHASHI, NOBUAKI
MIURA, HITOSHI

Assignees

東京エレクトロン株式会社

Dates

Publication Date: 20260507
Application Date: 20251024
Priority Date: 20241101

Claims (13)

A deposition chamber with a near-atmospheric pressure atmosphere that houses a substrate support section that supports the substrate, A first gas supply device that supplies a mixed gas containing nitrogen-containing raw material gas, A remote plasma unit receives the mixed gas containing the nitrogen-containing raw material gas from the first gas supply device, generates a plasma of the mixed gas, generates hydrazine in the plasma, and supplies the nitrogen-containing gas containing hydrazine to the film deposition chamber. The system includes a second gas supply device that supplies an organometallic gas to the film deposition chamber, The organometallic gas and the nitrogen-containing gas are reacted to form a nitride semiconductor layer on the substrate. Circuit board processing equipment.
The mixed gas containing the nitrogen-containing raw material gas contains ammonia and argon. The substrate processing apparatus according to claim 1.
The mixed gas containing the nitrogen-containing raw material gas contains N2 and H2 . The substrate processing apparatus according to claim 1.
The aforementioned organometallic gas contains any of trimethylgallium, triethylgallium, trimethylindium, or trimethylaluminum. The substrate processing apparatus according to claim 1.
The pressure in the film deposition chamber is in the range of 10 kPa to 100 kPa. The substrate processing apparatus according to claim 1.
The temperature of the substrate is lower than the temperature at which ammonia decomposes thermally. The substrate processing apparatus according to claim 2.
The remote plasma unit generates the plasma by dielectric barrier discharge or microwave discharge. The substrate processing apparatus according to claim 1.
The remote plasma unit has a plasma chamber with a near-atmospheric pressure atmosphere. A plasma of the mixed gas is supplied into the plasma chamber. The substrate processing apparatus according to claim 1.
The pressure in the plasma chamber is in the range of 10 kPa to 100 kPa. The substrate processing apparatus according to claim 8.
The remote plasma unit supplies the plasma of the mixed gas into the film deposition chamber. The substrate processing apparatus according to claim 1.
A substrate processing method for a substrate processing apparatus comprising: a deposition chamber in a near-atmospheric pressure atmosphere that houses a substrate support portion for supporting the substrate; a first gas supply device that supplies a mixed gas containing a nitrogen-containing raw material gas; a remote plasma unit that receives the mixed gas containing the nitrogen-containing raw material gas from the first gas supply device, generates a plasma of the mixed gas, generates hydrazine in the plasma, and supplies a nitrogen-containing gas containing hydrazine to the deposition chamber; and a second gas supply device that supplies an organometallic gas to the deposition chamber, wherein The organometallic gas and the nitrogen-containing gas are reacted to form a nitride semiconductor layer on the substrate. Substrate processing method.
The organometallic gas and the nitrogen gas are simultaneously supplied to the film formation chamber to form a nitride semiconductor layer on the substrate. The substrate processing method according to claim 11.
The organometallic gas and the nitrogen gas are alternately supplied to the film formation chamber to form a nitride semiconductor layer on the substrate. The substrate processing method according to claim 11.

Description

Substrate processing apparatus and substrate processing method This disclosure relates to a substrate processing apparatus and a substrate processing method. Patent Document 1 discloses a method for forming a nitride semiconductor layer by organometallic vapor deposition, comprising a heating step for increasing the temperature of a substrate and a growth step for growing a nitride semiconductor layer on a substrate by supplying nitrogen raw material gas and group III element raw material gas. An example of a block diagram showing the configuration of a substrate processing apparatus.An example of a configuration diagram for a remote plasma unit.An example of a diagram showing the configuration of a film deposition chamber.An example of a configuration diagram of a film deposition chamber with a remote plasma unit. The following describes the embodiments for implementing this disclosure with reference to the drawings. In each drawing, identical components are denoted by the same reference numerals, and redundant explanations may be omitted. [Substrate Processing Device 1] The substrate processing apparatus 1 will be described using Figure 1. Figure 1 is an example of a block diagram showing the configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 forms a nitride semiconductor layer on a substrate W by epitaxial growth. Specifically, the substrate processing apparatus 1 supplies an organometallic gas and a nitrogen-containing gas to the substrate W and forms a nitride semiconductor layer on the substrate W by metal-organic chemical vapor deposition (MOCVD). The nitride semiconductor layer is used in semiconductor devices such as light-emitting devices and electronic devices. The substrate processing apparatus 1 comprises a gas supply device 2, a remote plasma unit 3, a film deposition chamber 4, an exhaust device 5, a toxicization device 6, and a control unit 7. The gas supply device 2 (first gas supply device 2a in the examples shown in Figures 2 to 4) supplies a mixed gas containing ammonia ( NH3 ) and argon (Ar) to the remote plasma unit 3. Furthermore, the gas supply device 2 (second gas supply device 2b in the examples shown in Figures 2 to 4) supplies an organometallic gas to the film deposition chamber 4. The organometallic gas can be a gas containing Group III elements (Al, Ga, In, etc.) and carbon (C). Specifically, the organometallic gas can be any of the following: trimethylgallium (TMG), triethylgallium (TEG), trimethylindium (TMI), trimethylaluminum (TMA), etc. Furthermore, the gas supply device 2 (second gas supply device 2b in the examples of Figures 2 to 4) supplies a carrier gas to the film deposition chamber 4. For example, N2 , H2, or any other gas can be used as the carrier gas. Alternatively, the carrier gas may be supplied to the film deposition chamber 4 independently and used as a purge gas to purge the gas within the chamber 4. The remote plasma unit (hydrazine generation unit) 3 is supplied with a mixed gas containing ammonia ( NH3 ) and argon (Ar) from the gas supply device 2. The remote plasma unit 3 generates a plasma of the mixed gas in a near-atmospheric pressure atmosphere (for example, 1 kPa or more, preferably in the range of 10 kPa to 100 kPa), and generates hydrazine ( N2H4 ) in the plasma. For example , nitrogen-reactive species (for example, NH, NH2 ) are generated by dissociation from ammonia ( NH3 ) in the plasma, and hydrazine (N2H4) is generated by the reaction of these nitrogen-reactive species with each other and/or with ammonia, as shown in the following chemical formulas ( 1) and ( 2 ). NH 2 +NH 2 →N 2 H 4 ...(1) NH+ NH3 → N2H4 ... (2) Furthermore, the remote plasma unit 3 supplies a mixed gas containing the generated hydrazine ( N₂H₄ ) and undecomposed ammonia ( NH₃ ) to the deposition chamber 4 as a nitrogen-containing gas. The nitrogen-containing gas supplied to the deposition chamber 4 also contains argon (Ar). Note that nitrogen-active species such as radicals generated in the plasma are deactivated in a near-atmospheric pressure atmosphere. Therefore, the supply of nitrogen-active species such as radicals from the remote plasma unit 3 to the substrate W in the deposition chamber 4 is suppressed. In particular, by controlling the atmosphere in both the remote plasma unit 3 and the deposition chamber 4 to near atmospheric pressure, for example, 10 kPa to 100 kPa, hydrazine ( N₂H₄ ) and undecomposed ammonia ( NH₃ ) can be efficiently supplied to the deposition chamber 4 while suppressing nitrogen-active species such as radicals. The deposition chamber 4 has a substrate support section 41 (see Figures 3 and 4 described later) inside which the substrate W is supported. The inside of the deposition chamber 4 is pressure-regulated to a near-atmospheric pressure atmosphere (for example, 1 kPa or more, preferably in the range of 10 kPa to 100 kPa). The temperature of the substrate W inside the deposition chamber 4 is, for examp