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WO-2026095949-A1 - CHEMICAL MECHANICAL POLISHING SLURRY BUILDUP CLEANING

WO2026095949A1WO 2026095949 A1WO2026095949 A1WO 2026095949A1WO-2026095949-A1

Abstract

A substrate polishing apparatus having a cleaning station mounted to a wall of a housing of the polishing apparatus. The cleaning station includes a nozzle movable relative to the wall, and the nozzle configured to spray a cleaning fluid. The apparatus also include an image sensor configured to generate an image of a surface of the polishing apparatus. A controller coupled to the nozzle is configured to direct the nozzle to the surface and configured to monitor slurry buildup on the surface using the image.

Inventors

  • WU, HAOSHENG
  • DESHPANDE, SAMEER A.
  • JAIN, ASHEESH
  • ZUNIGA, STEVEN M.
  • VAN DER VEEN, SHAUN
  • PON, Devin
  • ZHONG, Elton
  • FLOYD, EDWARD L.
  • AUGASON ILINSKY, Emily
  • WONG, JUSTIN H.
  • DOMIN, JONATHAN P.
  • WONG, PHILLIP

Assignees

  • APPLIED MATERIALS, INC.

Dates

Publication Date
20260507
Application Date
20241101

Claims (20)

  1. What is claimed is:
  2. 1. A substrate polishing apparatus, comprising:
  3. a cleaning station mounted to a wall of a housing of the polishing apparatus, the cleaning station including a nozzle movable relative to the wall and configured to spray a cleaning fluid;
  4. an image sensor configured to generate an image of a surface of the polishing apparatus; and
  5. a controller coupled to the nozzle and configured to direct the nozzle to the surface and to monitor slurry buildup on the surface using the image.
  6. 2. The substrate polishing apparatus of claim 1, wherein the surface comprises a portion of at least one of a carrier head, an overhead track, a spray bar, a sidewall, a station cup, or a pad conditioning apparatus.
  7. 3. The substrate polishing apparatus of claim 1, wherein the image sensor is attached to or forms a part of the cleaning station.
  8. 4. The substrate polishing apparatus of claim 3, wherein the image sensor is movable relative to the wall.
  9. 5. The substrate polishing apparatus of claim 1, wherein the nozzle and the image sensor are attached to a platform of the cleaning station.
  10. 6. The substrate polishing apparatus of claim 1, wherein the wall is an upper wall or a side wall.
  11. 7. The substrate polishing apparatus of claim 1, wherein the cleaning station includes at least two nozzles.
  12. 8. The substrate polishing apparatus of claim 7, wherein the at least two nozzles have different sizes, shapes, or spray patterns. 9. The substrate polishing apparatus of claim 1, wherein the controller is configured to identify an area having slurry buildup in the polishing apparatus.
  13. 10. The substrate polishing apparatus of claim 9, wherein the nozzle is driven to clean the area for one or more of a longer time period than a predefined time period, spray a higher velocity cleaning fluid than a predefined velocity, or combinations thereof.
  14. 11. A slurry buildup cleaning method, comprising:
  15. capturing an image of a surface of a polishing apparatus;
  16. determining an area in the image having slurry buildup: and
  17. driving a nozzle to spray cleaning fluid to clean the area, the nozzle coupled to a wall of a housing of the polishing apparatus.
  18. 12. The method of claim 11, wherein the surface comprises a portion of at least one of a carrier head, an overhead track, a spray bar, a sidewall, a station cup, or a pad conditioning apparatus.
  19. 13. The method of claim 11, wherein the nozzle is movably supported on a platform of cleaning station.
  20. 14. The method of claim 13, wherein the image is captured using an image sensor attached to or forming a part of the cleaning station.

Description

CHEMICAL MECHANICAL POLISHING SLURRY BUILDUP CLEANING BACKGROUND Field [0001] Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems used in the manufacturing of semiconductor devices. In particular, embodiments herein relate to cleaning and monitoring slurry buildup in CMP systems. Description of the Related Art [0002] Chemical mechanical polishing (CMP) is commonly used in the manufacturing of semiconductor devices to planarize or polish a layer of material deposited on a substrate surface. During a CMP process, a substrate is retained in a substrate carrier which presses the backside of the substrate towards a rotating polishing pad in the presence of a polishing fluid. Material is removed across the material layer surface of the substrate in contact with the polishing pad through a combination of chemical and mechanical activity which is provided by the polishing fluid and the relative motion of the substrate and the polishing pad. [0003] Polishing fluid used in a CMP process may include an aqueous solution of one or more chemical constituents along with nanoscale abrasive particles suspended in the aqueous solution. Commonly, dried residues of the polishing fluid, such as agglomerations of abrasive particles, accumulate on component surfaces that are disposed above or otherwise proximate to the polishing pad during the polishing process. For example, dried residues of the polishing fluid often accumulate on surfaces of CMP system components that are disposed over a polishing pad as a polishing fluid is dispensed thereon, such as substrate carriers, pad conditioner assemblies, and/or fluid delivery arms. If the accumulated residue is not removed, agglomerations of abrasive particles may flake from the component surfaces onto the polishing pad and cause undesirable damage to the material surface of a substrate subsequently polished thereon. This damage often manifests as scratches, e.g., micro-scratches, on the substrate surface which may detrimentally affect the performance of a device formed thereon or in some circumstances, may render the device inoperable. [0004] Unfortunately, removing the accumulated residue from component surfaces is generally laborious and time-consuming as the agglomerated abrasive particles often form cement-like layers. The result is undesirable extended and frequent polishing system downtime for consumable change-out and/or preventive maintenance procedures where the accumulated residue is manually cleaned from the component surfaces. [0005] Accordingly, there is a need in the art for apparatus and methods that solve the problems described above. SUMMARY [0006] The present disclosure generally relates to chemical mechanical polishing (CMP) systems used in the manufacturing of semiconductor devices. In particular, embodiments herein relate to cleaning and monitoring slurry buildup in CMP systems. [0007] In one embodiment, a substrate polishing apparatus has a cleaning station mounted to a wall of a housing of the polishing apparatus. The cleaning station includes a nozzle movable relative to the wall, and the nozzle is configured to spray a cleaning fluid. The apparatus also include an image sensor configured to generate an image of a surface of the polishing apparatus. A controller coupled to the nozzle is configured to direct the nozzle to the surface and configured to monitor slurry buildup on the surface using the image. [0008] In another embodiment, a slurry buildup cleaning method includes capturing an image of a surface of a polishing apparatus and determining an area in the image having slurry buildup. The method also includes driving a nozzle to spray cleaning fluid to clean the area, the nozzle coupled to a wall of a housing of the polishing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS [0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of the disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments. [0010] Figure 1 is a schematic view of a polishing apparatus, according to one or more embodiments. [0011] Figure 1A is a schematic, partial cross-sectional side view of Figure 1. [0012] Figure 1B is a schematic, partial cross-sectional side view of Figure 1. [0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION [0014] Embodiments of the present