WO-2026096236-A1 - ELECTROSTATIC SHIELDS FOR PLASMA PROCESSING CHAMBERS

Abstract

A system includes a substrate processing chamber, one or more coils arranged along the substrate processing chamber, the one or more coils including an outer coil segment and an inner coil segment, and an electrostatic shield arranged between the coils and the substrate processing chamber to cover only the outer coil segment of the one or more coils. Other example systems and electrostatic shields are also disclosed.

Inventors

• CUI, LINYING
• BENJAMIN, NEIL M.P.

Assignees

• LAM RESEARCH CORPORATION

Dates

Publication Date

20260507

Application Date

20251021

Priority Date

20241104

Claims (20)

1. 1 . A system comprising: a substrate processing chamber; one or more coils arranged along the substrate processing chamber, the one or more coils including an outer coil segment and an inner coil segment; and an electrostatic shield arranged between the coils and the substrate processing chamber to cover only the outer coil segment of the one or more coils.
2. 2. The system of claim 1 , further comprising a dielectric window arranged along a side of the substrate processing chamber, the dielectric window including an inner surface facing the side of the substrate processing chamber and an opposing outer surface, wherein the one or more coils are arranged along the outer surface of the dielectric window.
3. 3. The system of claim 2, wherein the electrostatic shield is positioned between the coils and the dielectric window.
4. 4. The system of claim 2, wherein the electrostatic shield is integrated into the dielectric window.
5. 5. The system of claim 1 , wherein: the electrostatic shield includes a plurality of petal groups, each petal group including a substantially-f lat structure and insulated from the remaining petal groups; and each substantially-flat structure includes at least one outer conductive annulus extending along an outer periphery of the substantially-flat structure and a plurality of conductive petals, at least two conductive petals of the plurality of conductive petals connected to the outer conductive annulus.
6. 6. The system of claim 1 , further comprising an RF generator configured to provide an RF voltage to the electrostatic shield. Attorney Docket No. 11916-1 WO HDP Ref. No. 15545-001298-WO-POA
7. 7. The system of claim 6, wherein: the outer coil segment is configured to receive an RF coil voltage; and the system further comprises a controller in communication with the RF generator, the controller configured to control the RF generator to stop providing the RF voltage to the electrostatic shield after the outer coil segment receives the RF coil voltage.
8. 8. The system of claim 6, wherein: the outer coil segment is configured to receive a pulsed RF coil voltage; and the system further comprises a controller in communication with the RF generator, the controller configured to control the RF generator to provide the RF voltage to the electrostatic shield before a rising edge of each pulse and stop providing the RF voltage to the electrostatic shield during each pulse.
9. 9. The system of claim 6, wherein the RF generator is configured to provide an RF voltage to the one or more coils.
10. 10. The system of claim 9, further comprising a converter coupled between the RF generator and the electrostatic shield, the converter configured to adjust a phase and an amplitude of the RF voltage provided to the electrostatic shield.
11. 1 1. The system of claim 6, wherein: the RF generator is a first RF generator; and the system further comprises a second RF generator configured to provide an RF voltage to the one or more coils.
12. 12. The system of claim 6, wherein: the substrate processing chamber includes a substrate support; and the RF generator is configured to provide an RF voltage to the substrate support.
13. 13. The system of claim 1 , wherein the electrostatic shield is floating or grounded.
14. 14. The system of claim 1 , wherein the electrostatic shield is capacitively coupled to plasma within the substrate processing chamber. Attorney Docket No. 11916-1 WO HDP Ref. No. 15545-001298-WO-POA
15. 15. An electrostatic shield for use with a substrate processing chamber, the electrostatic shield comprising: a plurality of petal groups, each petal group including a substantially-f lat structure, insulated from the remaining petal groups and connected to at least one electrical lead, each substantially-f lat structure including at least one outer conductive annulus extending along an outer periphery of the substantially-flat structure and a plurality of conductive petals, at least two conductive petals of the plurality of conductive petals connected to the outer conductive annulus.
16. 16. The electrostatic shield of claim 15, wherein the two conductive petals are a first set of petals; each substantially-flat structure includes at least one inner conductive annulus extending along an inner periphery of the substantially-flat structure; and a second set of petals of the plurality of conductive petals is connected to the inner conductive annulus.
17. 17. The electrostatic shield of claim 16, wherein the second set of petals includes one of the two conductive petals connected to the outer conductive annulus.
18. 18. The electrostatic shield of claim 15, wherein each substantially-flat structure includes a plurality of outer conductive annuluses and a plurality of inner conductive annuluses alternately arranged about the electrostatic shield.
19. 19. The electrostatic shield of claim 15, wherein the two conductive petals are insulated from each other except where the conductive petals are connected to the outer conductive annulus.
20. 20. The electrostatic shield of claim 15, wherein the two conductive petals have the same surface areas.

Description

Attorney Docket No. 11916-1 WO HDP Ref. No. 15545-001298-WO-POA ELECTROSTATIC SHIELDS FOR PLASMA PROCESSING CHAMBERS CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of U.S. Provisional Application No. 63/715,670 filed on November 4, 2024. The entire disclosure of the above application is incorporated herein by reference. FIELD [0002] The present disclosure relates to substrate processing, and more particularly to electrostatic shields for plasma processing chambers. BACKGROUND [0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure. [0004] A substrate processing system may be used to etch substrates such as semiconductor wafers in a processing chamber. The substrate processing system typically includes a processing chamber, a gas distribution device, and a substrate support. Examples of substrate processing systems for etching include capacitively coupled plasma (COP) systems and transformer coupled plasma (TCP) systems. [0005] During processing, the substrate is arranged on the substrate support. Different gas mixtures may be introduced into the processing chamber and plasma may be generated to activate chemical reactions. With TCP systems, TCP coils are arranged around the processing chamber and a shield may be arranged over the entirety of the coils. When powered, the TCP coils couple to the plasma both electrostatically and electromagnetically. With this coupling, the TCP systems operates in an electric or capacitive mode (E-mode) with low plasma density or a magnetic or inductive mode (H- mode) with high plasma density. Attorney Docket No. 11916-1 WO HDP Ref. No. 15545-001298-WO-POA SUMMARY [0006] A system includes a substrate processing chamber, one or more coils arranged along the substrate processing chamber, the one or more coils including an outer coil segment and an inner coil segment, and an electrostatic shield arranged between the coils and the substrate processing chamber to cover only the outer coil segment of the one or more coils. [0007] In other features, the system further includes a dielectric window arranged along a side of the substrate processing chamber. The dielectric window includes an inner surface facing the side of the substrate processing chamber and an opposing outer surface, wherein the one or more coils are arranged along the outer surface of the dielectric window. [0008] In other features, the electrostatic shield is positioned between the coils and the dielectric window. [0009] In other features, the electrostatic shield is integrated into the dielectric window. [0010] In other features, the electrostatic shield includes a plurality of petal groups. Each petal group includes a substantially-flat structure and insulated from the remaining petal groups. Each substantially-flat structure includes at least one outer conductive annulus extending along an outer periphery of the substantially-flat structure and a plurality of conductive petals, at least two conductive petals of the plurality of conductive petals connected to the outer conductive annulus. [0011] In other features, the system further includes an RF generator configured to provide an RF voltage to the electrostatic shield. [0012] In other features, the outer coil segment is configured to receive an RF coil voltage. [0013] In other features, the system further includes a controller in communication with the RF generator. The controller is configured to control the RF generator to stop providing the RF voltage to the electrostatic shield after the outer coil segment receives the RF coil voltage. [0014] In other features, the outer coil segment is configured to receive a pulsed RF coil voltage. [0015] In other features, the system further includes a controller in communication with the RF generator. The controller is configured to control the RF generator to provide the Attorney Docket No. 11916-1 WO HDP Ref. No. 15545-001298-WO-POA RF voltage to the electrostatic shield before a rising edge of each pulse and stop providing the RF voltage to the electrostatic shield during each pulse. [0016] In other features, the RF generator is configured to provide an RF voltage to the one or more coils. [0017] In other features, the system further includes a converter coupled between the RF generator and the electrostatic shield. The converter is configured to adjust a phase and an amplitude of the RF voltage provided to the electrostatic shield. [0018] In other features, the RF generator is a first RF generator, and the system further includes a second RF generator configured to provide an RF voltage to the one or more coils. [0019] In other